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Professor Mark S. Goorsky
tel. (310) 206-0267
fax (310) 206-7353
Electronic Materials Group Website
Archaeomaterials Group Website
bulletProfessor and Chair; B.S., Materials Science and Engineering, Northwestern; Ph.D., Materials Science and Engineering, MIT; Postdoctoral Fellow, IBM T.J. Watson Research Center, Excellence in Teaching Award (1993) School of Engineering and Applied Science, NSF Career Award (1995).

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High resolution X-ray diffraction; III-V; Ion Implantation, Epitaxial relaxation.
bulletThe research programs in my group focus on the relationship between structural and chemical irregularities in solid state electronic materials and the effect that these defects have on the performance of devices fabricated from these materials. We primarily collaborate with industrial and government laboratories to provide a synergistic effort to study these issues. In particular, we use non-destructive techniques to study the evolution of defects in these structures. One of the main characterizations techniques we employ is reciprocal space mapping through triple axis x-ray diffraction.
bulletOur primary efforts in heteroepitaxy include i) pseudomorphic high electron mobility and heterojunction bipolar transistors grown on GaAs and InP substrates for radar-based communications; this effort (III-V heterostructures) also addresses the role of substrate perfection on the structural quality of the subsequently grown layers and on device performance, ii) solar cells using III-V / Ge solar cells. 
bulletSelective epitaxial growth offers a means to synthesize low dimensional structures which exhibit novel quantum confinement features. This is our newest effort - in collaboration with Prof. K.L. Wang in the Electrical Engineering Department at UCLA - which focuses on gas source molecular beam epitaxy of silicon-germanium-carbon heterostructures.
bulletWe are studying the growth of ternary InxGa1-xAs and CdxZn1-xTe bulk substrates to improve material quality and compositional uniformity. These substrates aim to provide a growth template with a different lattice parameter than can be achieved with binary compounds. Along with .. CdxZn1-xTe, we are studying HgI2 and GaAs as x-ray and gamma-ray detectors. Also, we have collaborations in relaxed graded buffer layers as an alternative means to tailor the lattice parameter of the surface of such structures.
bulletIon implantation represents a key technology for III-V device processing. Our present research focuses on residual damage and dopant activation of carbon-implanted GaAs for p-type conduction and silicon-implanted GaAs for n-type conduction.

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