Prof. Xie's Group
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Semiconductor Materials Research Lab
Professor Ya-Hong Xie

Semiconductor Materials Research Laboratory, Department of Materials Science and Engineering, University of California, Los Angeles

Box 951595, Los Angeles, CA 90095-1595 (Tel) +1 310 825 2971 UCLA SMRL © 2013 | All Rights Reserved


BS in Physics, Purdue University (1981);

MS (1983) & PhD (1986) in Electrical Engineering, University of California, Los Angeles.

Professional Experience

Member of the Technical Staff at Bell Laboratories (1986-1999); 

Professor of Material Science and Engineering, University of California at Los Angeles (1999-Current).


Humboldt Research Award (2012)

Ya-Hong Xie was born in Beijing, China. He entered the Physics Department of Peking University in 1977. He transferred to the Physics Department of Purdue University in Indiana, USA in 1979. He graduated with the B.S. degree in physics from Purdue University in 1981, and the M.S. and Ph. D degrees in electrical engineering from UCLA in 1983 and 1986, respectively. His Ph. D thesis research was on Si Molecular Beam Epitaxy under the guidance of Prof. Kang L. Wang. 

Ya-Hong Xie joined Bell Laboratories in 1986 as a member of the technical staff. During his 13 years tenure at Bell Laboratories, Ya-Hong Xie’s research included impurity center mediated luminescence in semiconductors, light emitting porous Si, GeSi/Si molecular beam epitaxy, dislocation kinetics in relaxed GeSi/Si heterostructures, strain induced surface roughening in GeSi epitaxial thin films (also known as self-assembled quantum dots), fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si, and the transport properties and device applications of various Si-based heterostructures.

Ya-Hong Xie joined UCLA as a professor of Materials Science & Engineering in 1999. His current research interests include the physical properties (optical, electronic and mechanical) of graphene and other van der Waals materials especially pertaining to biomedical applications, plasmonics, and epitaxial growths of dislocation-free group III-nitride as well as wide bandgap semiconductor devices.