Prof. Xie's Group
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Semiconductor Materials Research Lab

2013

  1. Dyakov,S. A., Perova,T. S., Miao,C. Q., Xie,Y.-H., Cherevkov,S. A., Baranov, A. V., "Influence of the buffer layer properties on the intensity of Raman scattering of graphene)", Journal of Raman Spectroscopy, (published online) (2013)
  2. Zhang W, Liu P, Jackson B, Sun T, Huang S-J, Hsu H-C, Su Y-K, Chang S-J, Li L, Li D, Wang L, Hu X, Xie YH, "Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN", Journal of Applied Physics, 113 (14): 144908 (2013)

2012

  1. Zoellner, M.H., Zaumseil, P., Wilkens, H., Gevers, S., Wollschlager, J., Baumer, M., Xie, Y.H., Niu, G., Schroeder, T., "Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-delta (X=0-1) thin films on Si(111)", Journal of Crystal Growth, 355 (1): 159-165 (2012)
  2. Sun, K., Zhang, W., Li, B.Y., Lee, J.Y., Xie, Y.H., Schroeder, T., Katzer, J., Wei, X.Y., Russell, T.P., "Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si", IEEE Transactions on Nanotechnology, 11 (5): 999-1003 (2012)
  3. Wang, P., Zhang, W., Liang, O., Pantoja, M., Katzer, J., Schroeder, T., Xie, Y.H., "Giant Optical Response from Graphene-Plasmonic System", ACS Nano, 6 (7): 6244-6249 (2012)
  4. Li, L., Liu, J.P.C., Liu, L., Li, D., Wang, L., Wan, C.H., Chen, W.H., Yang, Z.J., Xie, Y.H., Hu, X.D., Zhang, G.Y., "Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels", Applied Physics Express, 5 (5): (2012)
  5. Mehr, W., Dabrowski, J., Scheytt, J.C., Lippert, G., Xie, Y.H., Lemme, M.C., Ostling, M., Lupina, G., "Vertical Graphene Base Transistor", Ieee Electron Device Letters, 33 (5): 691-693 (2012)
2011
  1. Lu, T.M., Pan, W., Tsui, D.C., Liu, P.C., Zhang, Z., Xie, Y.H., "Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in a Si/SiGe Quantum Well", Physical Review Letters, 107 (12): (2011)
  2. Richard, M.I., Malachias, A., Rouviere, J.L., Yoon, T.S., Holmstrom, E., Xie, Y.H., Favre-Nicolin, V., Holy, V., Nordlund, K., Renaud, G., Metzger, T.H., "Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis", Physical Review B, 84 (7): (2011)
  3. Lin, X., Hu, J.S., Lai, A.P., Zhang, Z.N., MacLean, K., Dillard, C., Xie, Y.H., Kastner, M.A., "The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures", Journal of Applied Physics, 110 (2): (2011)
  4. Tura, A., Zhang, Z.N., Liu, P.C., Xie, Y.H., Woo, J.C.S., "Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling Junction", Ieee Transactions on Electron Devices, 58 (7): 1907-1913 (2011)
  5. Zhang, X., Xu, C.K., Chong, K., Tu, K.N., Xie, Y.H., "Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits", Materials, 4 (6): 952-962 (2011)
  6. Lee, J.Y., Sun, K., Li, B.Y., Wei, X.Y., Russell, T., Xie, Y.H., "A Method to Fabricate a Template With a Long Range Ordered Dense Array of True Nanometer Scale Pits", IEEE Transactions on Nanotechnology, 10 (2): 256-259 (2011)
2010
  1. Wang, Y.J., Miao, C.Q., Huang, B.C., Zhu, J., Liu, W., Park, Y., Xie, Y.H., Woo, J.C.S., "Scalable Synthesis of Graphene on Patterned Ni and Transfer", IEEE Transactions on Electron Devices, 57 (12): 3472-3476 (2010)
  2. Murata, Y., Petrova, V., Kappes, B.B., Ebnonnasir, A., Petrov, I., Xie, Y.H., Ciobanu, C.V., Kodambaka, S., "Moire Superstructures of Graphene on Faceted Nickel Islands", ACS Nano, 4 (11): 6509-6514 (2010)
  3. Lee, J.Y., Sun, K., Li, B.Y., Xie, Y.H., Wei, X.Y., Russell, T.P., "Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate", Applied Physics Letters, 97 (9): (2010)
  4. Sun, K., Lee, J.Y., Li, B.Y., Liu, W., Miao, C.Q., Xie, Y.H., Wei, X.Y., Russell, T.P., "Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays", Journal of Applied Physics, 108 (3): (2010)
  5. Liu, W., Jackson, B.L., Zhu, J., Miao, C.Q., Chung, C.H., Park, Y.J., Sun, K., Woo, J., Xie, Y.H., "Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors", ACS Nano, 4 (7): 3927-3932 (2010)
  6. Liu, W., Xiu, F.X., Sun, K., Xie, Y.H., Wang, K.L., Wang, Y., Zou, J., Yang, Z., Liu, J.L., "Na-Doped p-Type ZnO Microwires", Journal of the American Chemical Society, 132 (8): 2498-+ (2010)
  7. Hu, Q., Seo, I., Zhang, Z.N., Lee, S.H., Kim, H.M., Kim, S.H., Kim, Y.S., Lee, H.H., Xie, Y.H., Kim, K.B., Yoon, T.S., "Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation", Thin Solid Films, 518: S217-S221 (2010)
  8. Liu, W., Chung, C.H., Miao, C.Q., Wang, Y.J., Li, B.Y., Ruan, L.Y., Patel, K., Park, Y.J., Woo, J., Xie, Y.H., "Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films", Thin Solid Films, 518: S128-S132 (2010)
2009
  1. Yoon, T.S., Kim, H.M., Kim, K.B., Ryu, D.Y., Russell, T.P., Zhao, Z.M., Liu, J., Xie, Y.H., "Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates", Physica Status Solidi B-Basic Solid State Physics, 246 (4): 721-724 (2009)
  2. Galatsis, K., Khitun, A., Ostroumov, R., Wang, K.L., Dichtel, W.R., Plummer, E., Stoddart, J.F., Zink, J.I., Lee, J.Y., Xie, Y.H., Kim, K.W., "Alternate State Variables for Emerging Nanoelectronic Devices", IEEE Transactions on Nanotechnology, 8 (1): 66-75 (2009)
2008
  1. Lu, T.M., Sun, L., Tsui, D.C., Lyon, S., Pan, W., Muhlberger, M., Schaffler, F., Liu, J., Xie, Y.H., "In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK", Physical Review B, 78 (23): (2008)
  2. Liu, J., Kim, J.H., Xie, Y.H., Lu, T.M., Lai, K., "Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes", Thin Solid Films, 517 (1): 45-49 (2008)
  3. Kim, J., Lee, J.Y., Xie, Y.H., "Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates", Thin Solid Films, 516 (21): 7599-7603 (2008)
  4. Sahni, S., Luo, X., Liu, J., Xie, Y.H., Yablonovitch, E., "Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator", Optics Letters, 33 (10): 1138-1140 (2008)
  5. Liu, J., Lu, T.M., Kim, J., Lai, K., Tsui, D.C., Xie, Y.H., "The proximity effect of the regrowth interface on two-dimensional electron density in strained Si", Applied Physics Letters, 92 (11): (2008)
  6. Kyuchul, C., Ya-Hong, X., "Three-dimensional impedance engineering for mixed-signal system-on-chip applications", 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT): 5 pp.-5 pp. (2008)
2007
  1. Kim, J., Li, B.Y., Xie, Y.H., "A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates", Applied Physics Letters, 91 (25): (2007)
  2. Yoon, T.S., Kim, H.M., Kim, K.B., Ryu, D.Y., Russell, T.P., Zhao, Z., Liu, J., Xie, Y.H., "Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO(2)/Si substrates by high-resolution transmission electron microscopy", Journal of Applied Physics, 102 (10): (2007)
  3. Lu, T.M., Liu, J., Kim, J., Lai, K., Tsui, D.C., Xie, Y.H., "Capacitively induced high mobility two-dimensional electron gas in undoped Si/Si1-xGex heterostructures with atomic-layer-deposited dielectric", Applied Physics Letters, 90 (18): (2007)
  4. Xu, C.K., Li, M.H., Zhang, X., Tu, K.N., Xie, Y.H., "Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio", Electrochimica Acta, 52 (12): 3901-3909 (2007)
  5. Shi, B., Chang, P.S., Sun, K., Xie, Y.H., Radhakrishnan, C., Monbouquette, H.G., "Monolithic integrated modulator on silicon for optical interconnects", Ieee Photonics Technology Letters, 19 (2-4): 55-57 (2007)
  6. Xu, C.K., Zhang, X., Tu, K.N., Xie, Y.H., "Nickel displacement deposition of porous silicon with ultrahigh aspect ratio", Journal of the Electrochemical Society, 154 (3): D170-D174 (2007)
2006
  1. Kim, J., Xie, Y.H., "Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates", Applied Physics Letters, 89 (15): (2006)
  2. Yoon, T.S., Zhao, Z.M., Liu, J., Xie, Y.H., Ryu, D.Y., Russell, T.P., Kim, H.M., Kim, K.B., "Selective growth of Ge islands on nanometer-scale patterned SiO2/Si substrate by molecular beam epitaxy", Applied Physics Letters, 89 (6): (2006)
  3. Zhang, X., Tu, K.N., Xie, Y.H., Tung, C.H., Xu, S.Y., "Single-step fabrication of nickel films with arrayed macropores and nanostructured skeletons", Advanced Materials, 18 (14): 1905-+ (2006)
  4. Zhao, Z.M., Yoon, T.S., Feng, W., Li, B.Y., Kim, J.H., Liu, J., Hulko, O., Xie, Y.H., Kim, H.M., Kim, K.B., Kim, H.J., Wang, K.L., Ratsch, C., Caflisch, R., Ryu, D.Y., Russell, T.P., "The challenges in guided self-assembly of Ge and InAs quantum dots on Si", Thin Solid Films, 508 (1-2): 195-199 (2006)
  5. Galatsis, K., Wang, K., Botros, Y., Yang, Y., Xie, Y.H., Stoddart, J.F., Kaner, R.B., Ozkan, C., Liu, J.L., Ozkan, M., Zhou, C.W., Kim, K.W., "Emerging memory devices - Nontraditional possibilities based on nanomaterials and nanostructures", Ieee Circuits & Devices, 22 (3): 12-21 (2006)
  6. Yoon, T.S., Zhao, Z.M., Feng, W., Li, B.Y., Liu, J., Xie, Y.H., Ryu, D.Y., Russell, T.P., Kim, H.M., Kim, K.B., "Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate", Journal of Crystal Growth, 290 (2): 369-373 (2006)
  7. Lai, K., Lu, T.M., Pan, W., Tsui, D.C., Lyon, S., Liu, J., Xie, Y.H., Muhlberger, M., Schaffler, F., "Valley splitting of Si/Si1-xGex heterostructures in tilted magnetic fields", Physical Review B, 73 (16): (2006)
  8. Zhang, X., Tu, K.N., Xie, Y.H., Tung, C.H., "High aspect ratio nickel structures fabricated by electrochemical replication of hydrofluoric acid etched silicon", Electrochemical and Solid State Letters, 9 (9): C150-C152 (2006)
2005
  1. Zhao, Z.M., Hulko, O., Yoon, T.S., Xie, Y.H., "Initial stage of InAs growth on Si(001) studied by high-resolution transmission electron microscopy", Journal of Applied Physics, 98 (12): (2005)
  2. Chong, K.C., Zhang, X., Tu, K.N., Huang, D.Q., Chang, M.C., Xie, Y.H., "Three-dimensional substrate impedance engineering based on p(-)/p(+) Si substrate for mixed-signal, system-on-chip (SoC)", Ieee Transactions on Electron Devices, 52 (11): 2440-2446 (2005)
  3. Chong, K., Xie, Y.H., "Low capacitance and high isolation bond pad for high-frequency RFICs", Ieee Electron Device Letters, 26 (10): 746-748 (2005)
  4. Chong, K., Xie, Y.H., "High-performance on-chip transformers", IEEE Electron Device Letters, 26 (8): 557-559 (2005)
  5. Yoon, T.S., Liu, J., Noori, A.M., Goorsky, M.S., Xie, Y.H., "Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers", Applied Physics Letters, 87 (1): (2005)
  6. Zhao, Z.M., Hul'ko, O., Kim, H.J., Liu, J., Shi, B., Xie, Y.H., "Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)", Thin Solid Films, 483 (1-2): 158-163 (2005)
  7. Chong, K.C., Xie, Y.H., Yu, K.W., Huang, D.Q., Chang, M.C.F., "High-performance inductors integrated on porous silicon", Ieee Electron Device Letters, 26 (2): 93-95 (2005)
2004
  1. Zhao, Z.M., Hul'ko, O., Kim, H.J., Liu, J., Sugahari, T., Shi, B., Xie, Y.H., "Growth and characterization of InAs quantum dots on Si(001) substrates", Journal of Crystal Growth, 271 (3-4): 450-455 (2004)
  2. Bandaru, P.R., Sahni, S., Yablonovitch, E., Liu, J., Kim, H.J., Xie, Y.H., "Fabrication and characterization of low temperature (< 450 degrees C) grown p-Ge/n-Si photodetectors for silicon based photonics", Materials Science and Engineering B-Solid State Materials for Advanced Technology, 113 (1): 79-84 (2004)
  3. Liu, J., Kim, H.J., Hul'ko, O., Xie, Y.H., Sahni, S., Bandaru, P., Yablonovitch, E., "Ge films grown on Si substrates by molecular-beam epitaxy below 450 degrees C", Journal of Applied Physics, 96 (1): 916-918 (2004)
  4. Kim, H.J., Liu, J., Zhao, Z.M., Xie, Y.H., "On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers", Journal of Vacuum Science & Technology B, 22 (4): 2257-2260 (2004)
  5. Kim, H.J., Zhao, Z.M., Liu, J., Ozolins, V., Chang, J.Y., Xie, Y.H., "A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001)", Journal of Applied Physics, 95 (11): 6065-6071 (2004)
  6. Bao, Y., Balandin, A.A., Liu, J.L., Liu, J., Xie, Y.H., "Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices", Applied Physics Letters, 84 (17): 3355-3357 (2004)
  7. Lai, K., Pan, W., Tsui, D.C., Xie, Y.H., "Fractional quantum Hall effect at v=2/3 and 4/3 in strained Si quantum wells", Physical Review B, 69 (12): (2004)
  8. Lai, K., Pan, W., Tsui, D.C., Xie, Y.H., "Observation of the apparent metal-insulator transition of high-mobility two-dimensional electron system in a Si/Si1-xGex heterostructure", Applied Physics Letters, 84 (2): 302-304 (2004)
2003
  1. Kim, H.J., Zhao, Z.M., Xie, Y.H., "Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers", Physical Review B, 68 (20): (2003)
  2. Kim, H.S., Chong, K., Xie, Y.H., Jenkins, K.A., "The importance of distributed grounding in combination with porous Si trenches for the reduction of RF crosstalk through p(-) Si substrate", Ieee Electron Device Letters, 24 (10): 640-642 (2003)
  3. Kim, H.S., Chong, K., Xie, Y.H., "Study of the cross-sectional profile in selective formation of porous silicon", Applied Physics Letters, 83 (13): 2710-2712 (2003)
  4. Shi, B., Xie, Y.H., "Influence of coupling effect in the operation of vertically coupled quantum-dot lasers", Applied Physics Letters, 82 (26): 4788-4790 (2003)
  5. Kim, H.S., Chong, K., Xie, Y.H., "The promising role of porous Si in mixed-signal integrated circuit technology", Physica Status Solidi a-Applied Research, 197 (1): 269-274 (2003)
  6. Kim, H.S., Xie, Y.H., DeVincentis, M., Itoh, T., Jenkins, K.A., "Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications", Journal of Applied Physics, 93 (7): 4226-4231 (2003)
  7. Kim, H.J., Chang, J.Y., Xie, Y.H., "Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)", Journal of Crystal Growth, 247 (3-4): 251-254 (2003)
2002
  1. Kim, H.S., Zouzounis, E.C., Xie, Y.H., "Effective method for stress reduction in thick porous silicon films", Applied Physics Letters, 80 (13): 2287-2289 (2002)
  2. Kim, H.S., Jenkins, K.A., Xie, Y.H., "Effective crosstalk isolation through p(+) Si substrates with semi-insulating porous Si", Ieee Electron Device Letters, 23 (3): 160-162 (2002)
  3. Han-Su, K., Kyuchul, C., Ya-Hong, X., Devincentis, M., Itoh, T., Becker, A.J., Jenkins, K.A., "A porous Si based novel isolation technology for mixed-signal integrated circuits", 2002 Symposium on VLSI Technology Digest of Technical Papers (Cat No01CH37303): 160-161 (2002)
2001
  1. Kim, H.J., Xie, Y.H., "Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001)", Applied Physics Letters, 79 (2): 263-265 (2001)
  2. Kim, H.S., Zheng, D.W., Becker, A.J., Xie, Y.H., "Spiral inductors on si p/p(+) substrates with resonant frequency of 20 GHz", Ieee Electron Device Letters, 22 (6): 275-277 (2001)
  3. Madhavi, S., Venkataraman, V., Xie, Y.H., "High room-temperature hole mobility in Ge0.7Si0.3/Ge/ Ge0.7Si0.3 modulation-doped heterostructures", Journal of Applied Physics, 89 (4): 2497-2499 (2001)
2000
  1. Vijayaraghavan, M.N., Venkataraman, V., Xie, Y.H., "Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures", Semiconductor Science and Technology, 15 (10): 957-960 (2000)
  2. Madhavi, S., Venkataraman, V., Sturm, J.C., Xie, Y.H., "Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells", Physical Review B, 61 (24): 16807-16818 (2000)
  3. Vuong, H.H., Xie, Y.H., Frei, M.R., Hobler, G., Pelaz, L., Rafferty, C.S., "Use of transient enhanced diffusion to tailor boron out-diffusion", Ieee Transactions on Electron Devices, 47 (7): 1401-1405 (2000)
1999
  1. Hilke, M., Shahar, D., Song, S.H., Tsui, D.C., Shayegan, M., Xie, Y.H., "The quantized Hall insulator", Annalen Der Physik, 8 (7-9): 603-608 (1999)
  2. Rokhinson, L.P., Tsui, D.C., Benton, J.L., Xie, Y.H., "Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si", Applied Physics Letters, 75 (16): 2413-2415 (1999)
  3. Heller, E.R., Jones, D.E., Pelz, J.P., Xie, Y.H., Silverman, P.J., "Effect of tensile strain on B-type step energy on Si(001)-(2x1) surfaces determined by switch-kink counting", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 17 (4): 1663-1669 (1999)
  4. Hilke, M., Shahar, D., Song, S.H., Tsui, D.C., Xie, Y.H., Shayegan, M., "Semicircle: An exact relation in the integer and fractional quantum Hall effect", Europhysics Letters, 46 (6): 775-779 (1999)
  5. Xie, Y.H., "SiGe field effect transistors", Materials Science & Engineering R-Reports, 25 (3): 89-121 (1999)
1998
  1. Xie, Y.H., Frei, M.R., Becker, A.J., King, C.A., Kossives, D., Gomez, L.T., Theiss, S.K., "An approach for fabricating high-performance inductors on low-resistivity substrates", Ieee Journal of Solid-State Circuits, 33 (9): 1433-1438 (1998)
  2. Watson, G.P., Benton, J.L., Xie, Y.H., Fitzgerald, E.A., "Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si", Journal of Applied Physics, 83 (7): 3773-3776 (1998)
  3. Hilke, M., Shahar, D., Song, S.H., Tsui, D.C., Xie, Y.H., Monroe, D., "Experimental evidence for a two-dimensional quantized Hall insulator", Nature, 395 (6703): 675-677 (1998)
1997
  1. Xie, Y.H., Samavedam, S.B., Bulsara, M., Langdo, T.A., Fitzgerald, E.A., "Relaxed template for fabricating regularly distributed quantum dot arrays", Applied Physics Letters, 71 (24): 3567-3568 (1997)
  2. Hilke, M., Shahar, D., Song, S.H., Tsui, D.C., Xie, Y.H., Monroe, D., "Symmetry in the insulator-quantum-Hall-insulator transitions observed in a Ge/SiGe quantum well", Physical Review B, 56 (24): R15545-R15548 (1997)
  3. Song, S.H., Pan, W., Tsui, D.C., Xie, Y.H., Monroe, D., "Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons", Applied Physics Letters, 70 (25): 3422-3424 (1997)
  4. Song, S.H., Shahar, D., Tsui, D.C., Xie, Y.H., Monroe, D., "New universality at the magnetic field driven insulator to integer quantum Hall effect transitions", Physical Review Letters, 78 (11): 2200-2203 (1997)
  5. Fitzgerald, E.A., Samavedam, S.B., Xie, Y.H., Giovane, L.M., "Influence of strain on semiconductor thin film epitaxy", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 15 (3): 1048-1056 (1997)
  6. Labovitz, S.M., Xie, Y.H., Pope, D.P., "Stress and temperature dependence of misfit dislocation nucleation rate in SiGe alloys: evidence of homogeneous nucleation", Thin Films - Structure and Morphology Symposium: 501-505 (1997)
1996
  1. Jones, D.E., Pelz, J.P., Hong, Y., Tsong, I.S.T., Xie, Y.H., Silverman, P.J., "Strain field imaging on Si/SiGe(001)-(2x1) surfaces by low-energy electron microscopy and scanning tunneling microscopy", Applied Physics Letters, 69 (21): 3245-3247 (1996)
  2. Xu, Q., Hsu, J.W.P., Fitzgerald, E.A., Kuo, J.M., Xie, Y.H., Silverman, P.J., "Influence of Ga vs As prelayers on GaAs/Ge growth morphology", Journal of Electronic Materials, 25 (6): 1009-1013 (1996)
  3. Hsu, J.W.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., "Studies of electrically active defects in relaxed GeSi films using a near-field scanning optical microscope", Journal of Applied Physics, 79 (10): 7743-7750 (1996)
  4. Gaponenko, S.V., Petrov, E.P., Woggon, U., Wind, O., Klingshirn, C., Xie, Y.H., Germanenko, I.N., Stupak, A.P., "Steady-state and time-resolved spectroscopy of porous silicon", Journal of Luminescence, 70: 364-376 (1996)
1995
  1. Xie, Y.H., Silverman, P.J., "The role of strain in silicon-based molecular beam epitaxy", Journal of Crystal Growth, 157 (1-4): 113-115 (1995)
  2. Gaponenko, S.V., Kononenko, V.K., Petrov, E.P., Germanenko, I.N., Stupak, A.P., Xie, Y.H., "Polarization of porous silicon luminescence", Applied Physics Letters, 67 (20): 3019-3021 (1995)
  3. Jones, D.E., Pelz, J.P., Xie, Y.H., Silverman, P.J., Fitzgerald, E.A., "Scanning-tunneling-microscopy study of cleaning procedures for SiGe(001) surfaces", Surface Science, 341 (1-2): L1005-L1010 (1995)
  4. Tobben, D., Holzmann, M., Abstreiter, G., Kriele, A., Lorenz, H., Kotthaus, J.P., Schaffler, F., Xie, Y.H., Silverman, P.J., Monroe, D., "Antidot superlattices in 2-dimensional hole gases confined in strained germanium layers", Semiconductor Science and Technology, 10 (10): 1413-1417 (1995)
  5. Jones, D.E., Pelz, J.P., Xie, Y.H., Silverman, P.J., Gilmer, G.H., "Enhanced Step Waviness on SiGe(001)-(2x1) Surfaces under Tensile Strain", Physical Review Letters, 75 (8): 1570-1573 (1995)
  6. Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.H., Ross, F.M., Chabal, Y.J., Harris, T.D., Brus, L.E., Brown, W.L., Chaban, E.E., Szajowski, P.F., Christman, S.B., Citrin, P.H., "Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si", Physical Review B, 52 (7): 4910-4925 (1995)
  7. Xie, Y.H., Gilmer, G.H., Roland, C., Silverman, P.J., Buratto, S.K., Cheng, J.Y., Fitzgerald, E.A., Kortan, A.R., Schuppler, S., Marcus, M.A., Citrin, P.H., "Step Energies And Roughening Of Strained Layers-Reply", Physical Review Letters, 74 (24): 4963-4963 (1995)
  8. Grillot, P.N., Ringel, S.A., Fitzgerald, E.A., Watson, G.P., Xie, Y.H., "Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures", Journal of Applied Physics, 77 (7): 3248-3256 (1995)
  9. Xie, Y.H., Germanenko, I.N., Voronin, V.F., Gaponenko, S.V., "Photodegradation of the luminescence of porous silicon during pulsed excitation", Semiconductors, 29 (4): 350-352 (1995)
  10. Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., "Fabrication and application of relaxed buffer layers", Materials Science and Engineering B-Solid State Materials for Advanced Technology, 30 (2-3): 201-203 (1995)
  11. Grillot, P.N., Ringel, S.A., Fitzgerald, E.A., Watson, G.P., Xie, Y.H., "Minority- and majority-carrier trapping in strain-relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor-deposition", Journal of Applied Physics, 77 (2): 676-685 (1995)
  12. Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.H., Ross, F.M., Harris, T.D., Brown, W.L., Chabal, Y.J., Szajowski, P.J., Chaban, E.E., Brus, L.E., Citrin, P.H., "Size, shape, and crystallinity of luminescent structures in oxidized Si nanoclusters and H-passivated porous Si", Microcrystalline and Nanocrystalline Semiconductors Symposium: 407-415 (1995)
1994
  1. Xie, Y.H., Gilmer, G.H., Roland, C., Silverman, P.J., Buratto, S.K., Cheng, J.Y., Fitzgerald, E.A., Kortan,A.R., Schuppler, S., Marcus, M.A., Citrin, P.H., "Semiconductor Surface-Roughness: Dependence on Sign and Magnitude of Bulk Strain", Physical Review Letters, 73 (22): 3006-3009 (1994)
  2. Hsu, J.W.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., "Near-field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1-x films", Applied Physics Letters, 65 (3): 344-346 (1994)
    Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.H., Ross, F.M., Harris, T.D., Brown, W.L., Chabal, Y.J., Brus, L.E., Citrin, P.H., "Dimensions of luminescent oxidized and porous silicon structures", Physical Review Letters, 72 (16): 2648-2651 (1994)
  3. Xie, Y.H., Fitzgerald, E.A., Monroe, D., Watson, G.P., Silverman, P.J., "From relaxed GeSi buffers to field-effect transistors - current status and future-prospects", Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 33 (4B): 2372-2377 (1994)
  4. Xie, Y.H., Hybertsen, M.S., Wilson, W.L., Ipri, S.A., Carver, G.E., Brown, W.L., Dons, E., Weir, B.E., Kortan, A.R., Watson, G.P., Liddle, A.J., "Absorption and luminescence studies of freestanding porous silicon films ", Physical Review B, 49 (8): 5386-5397 (1994)
  5. Fitzgerald, E.A., Kuo, J.M., Xie, Y.H., Silverman, P.J., "Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular-beam epitaxy", Applied Physics Letters, 64 (6): 733-735 (1994)
  6. Xie, Y.H., Hybertsen, M.S., Wilson, W.L., "Implication of silicon nanocrystallites from combined absorption and luminescence studies of freestanding porous silicon films", Japanese Journal of Applied Physics Part 2-Letters, 34: 257-260 (1994)
  7. Watson, G.P., Fitzgerald, E.A., Xie, Y.H., Monroe, D., "Relaxed, law threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical-vapor-deposition", Journal of Applied Physics, 75 (1): 263-269 (1994)
  8. Xie, Y.H., Gilmer, G.H., Roland, C.M., Silverman, P.J., Cheng, S.K., Fitzgerald, E.A., Kortan, A.R., Marcus, M.A., Citrin, P.H., "Bulk strain induced effects on Si/Ge (100) surface roughness", 22nd International Conference on the Physics of Semiconductors: 620-623 vol.621 (1994)
  9. Grillot, P.N., Ringel, S.A., Watson, G.P., Fitzgerald, E.A., Xie, Y.H., "Electronic characterization of dislocations in RTCVD germanium-silicon/silicon grown by graded layer epitaxy", Physics and Applications of Defects in Advanced Semiconductors Symposium: 159-164 (1994)
  10. Fitzgerald, E.A., Xie, Y.H., Monroe, D., Watson, G.P., Kuo, J.M., Silverman, P.J., "Defect control in relaxed, graded GeSi/Si", Materials Science Forum, 143-147: 471-481 (1994)
1993
  1. Xie, Y.H., Monroe, D., Fitzgerald, E.A., Silverman, P.J., Thiel, F.A., Watson, G.P., "Very high-mobility 2-dimensional hole gas in Si/GexSi1-x/Ge structures grown by molecular-beam epitaxy", Applied Physics Letters, 63 (16): 2263-2264 (1993)
  2. Watson, G.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., White, A.E., Short, K.T., "Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si", Applied Physics Letters, 63 (6): 746-748 (1993)
    Monroe, D., Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., Watson, G.P., "Comparison of mobility-limiting mechanisms in high-mobility Si1-xGex heterostructures", Journal of Vacuum Science & Technology B, 11 (4): 1731-1737 (1993)
  3. Xie, Y.H., Fitzgerald, E.A., Monroe, D., Silverman, P.J., Watson, G.P., "Fabrication of high-mobility 2-dimensional electron and hole gases in GeSi/Si", Journal of Applied Physics, 73 (12): 8364-8370 (1993)
  4. Kuo, J.M., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., "Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed GexSi1-x/Si", Journal of Vacuum Science & Technology B, 11 (3): 857-860 (1993)
  5. Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.H., Harris, T.D., Citrin, P.H., "Unimportance of siloxene in the luminescence of porous silicon", Applied Physics Letters, 62 (16): 1934-1936 (1993)
  6. Iyer, S.S., Xie, Y.H., "Light-emission from silicon", Science, 260 (5104): 40-46 (1993)
  7. Higgs, V., Lightowlers, E.C., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., "Characterization of compositionally graded Si1-xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging", Journal of Applied Physics, 73 (4): 1952-1956 (1993)
  8. Watson, G.P., Fitzgerald, E.A., Jalali, B., Xie, Y.H., Weir, B., Feldman, L.C., "Correlation between defect density and process variables in step-graded, relaxed Si 0.7Ge 0.3 grown on Si by RTCVD", Rapid Thermal and Integrated Processing II: 15-1717 (1993)
  9. Hsu, J.W.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., Cardillo, M.J., "Process and defect induced surface morphology of relaxed Ge x Si 1-x films", Proceedings of the SPIE - The International Society for Optical Engineering, 1855: 118-128 (1993)
  10. Monroe, D., Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., "Transport in high-mobility Si1-xGex heterostructures grown by molecular-beam epitaxy", Semiconductor Heterostructures for Photonic and Electronic Applications Symposium: 449-454 (1993)
1992
  1. Michel, J., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., Morse, M., Kimerling, L.C., "Photoluminescence investigations of graded, totally relaxed GexSi1-x structures", Journal of Electronic Materials, 21 (12): 1099-1104 (1992)
  2. Monroe, D., Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., "Quantized hall-effects in high-electron-mobility Si/Ge structures", Physical Review B, 46 (12): 7935-7937 (1992)
  3. Hsu, J.W.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., Cardillo, M.J., "Surface-morphology of related GexSi1-x films", Applied Physics Letters, 61 (11): 1293-1295 (1992)
  4. Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., Kortan, A.R., Weir, B.E., "Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density", Materials Science and Engineering B-Solid State Materials for Advanced Technology, 14 (3): 332-335 (1992)
  5. Fitzgerald, E.A., Xie, Y.H., Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Thiel, F.A., Weir, B.E., "Relaxed GexSi1-x structures for III-V integration with Si and high mobility 2-dimensional electron gases in Si", Journal of Vacuum Science & Technology B, 10 (4): 1807-1819 (1992)
  6. Xie, Y.H., Wilson, W.L., Ross, F.M., Mucha, J.A., Fitzgerald, E.A., Macaulay, J.M., Harris, T.D., "Luminescence and structural study of porous silicon films", Journal of Applied Physics, 71 (5): 2403-2407 (1992)
  7. Michel, J., Kimerling, L.C., Benton, J., Eaglesham, D., Fitzgerald, E., Jacobson, D., Poate, J., Xie, Y.-H., Ferrante, R. Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon[C]: Trans Tech Publ, 1992: 653-658.
1991
  1. Volkert, C.A., Fitzgerald, E.A., Hull, R., Xie, Y.H., Mii, Y.J., "Strain relaxation in Ge0.09Si0.91 epitaxial thin-films measured by wafer curvature", Journal of Electronic Materials, 20 (10): 833-837 (1991)
  2. Mii, Y.J., Xie, Y.H., Fitzgerald, E.A., Monroe, D., Thiel, F.A., Weir, B.E., Feldman, L.C., "Extremely high electron-mobility in Si/GexSi1-x structures grown by molecular-beam epitaxy", Applied Physics Letters, 59 (13): 1611-1613 (1991)
  3. Xie, Y.H., Fitzgerald, E.A., Mii, Y.J., "Evaluation of erbium-doped silicon for optoelectronic applications", Journal of Applied Physics, 70 (6): 3223-3228 (1991)
  4. Benton, J.L., Michel, J., Kimerling, L.C., Jacobson, D.C., Xie, Y.H., Eaglesham, D.J., Fitzgerald, E.A., Poate, J.M., "The electrical and defect properties of Erbium-implanted Silicon", Journal of Applied Physics, 70 (5): 2667-2671 (1991)
  5. Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H., Poate, J.M., Kimerling, L.C., "Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon", Journal of Applied Physics, 70 (5): 2672-2678 (1991)
  6. Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Michel, J., Mii, Y.J., Weir, B.E., "Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates", Applied Physics Letters, 59 (7): 811-813 (1991)
  7. Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Xie, Y.H., Kimerling, L.C., "Microstructure of Erbium-implanted Si", Applied Physics Letters, 58 (24): 2797-2799 (1991)
  8. Fitzgerald, E.A., Freeland, P.E., Asom, M.T., Lowe, W.P., Macharrie, R.A., Weir, B.E., Kortan, A.R., Thiel, F.A., Xie, Y.H., Sergent, A.M., Cooper, S.L., Thomas, G.A., Kimerling, L.C., "Epitaxially stabilized GexSn1-x diamond cubic alloys", Journal of Electronic Materials, 20 (6): 489-501 (1991)
  9. Xie, Y.H., Fitzgerald, E.A., Mii, Y.J., Monroe, D., Thiel, F.A., Weir, B.E., Feldman, L.C., "Molecular beam epitaxial growth of very high mobility two-dimensional electron gases in Si/GeSi heterostructures", Silicon Molecular Beam Epitaxy Symposium: 413-417 (1991)
  10. Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Mii, Y.J., Michel, M.J., Weir, B.E., Feldman, L.C., Kuo, J.M., "Strain-free Ge xSi 1-x layers with low threading dislocation densities grown on Si substrates", Silicon Molecular Beam Epitaxy Symposium: 211-215 (1991)
  11. Hull, R., Bean, J.C., Peticolas, L., Xie, Y.H., Hsieh, Y.F., "Growth of Ge xSi 1-x/Si alloys on Si(100), (110) and (111) surfaces", Silicon Molecular Beam Epitaxy Symposium: 153-159159 (1991)
  12. Xie, Y.H., Gilmer, G.H., Fitzgerald, E.A., Michel, J., "Columnar structure growth by silicon molecular beam epitaxy", Silicon Molecular Beam Epitaxy Symposium: 41-47 (1991)
1990
  1. Xie, Y.H., Jindal, R.P., Benton, J.L., Paulnack, C.L., Langer, P.H., Miller, A.J., "Selective epitaxial-growth in deep trenches for integrated photodetector applications", Journal of the Electrochemical Society, 137 (11): 3559-3561 (1990)
  2. Fitzgerald, E.A., Xie, Y.H., Brasen, D., Green, M.L., Michel, J., Freeland, P.E., Weir, B.E., "Elimination of dislocations in heteroepitaxial MBE and RTCVD GexSi1-x grown on patterned Si substrates", Journal of Electronic Materials, 19 (9): 949-955 (1990)
  3. Xie, Y.H., "A reevaluation of heteroepitaxy of continuous films on patterned substrates", Thin Solid Films, 188 (2): L1-L4 (1990)
  4. Fitzgerald, E.A., Xie, Y.H., Brasen, D., Green, M.L., Michel, J., Weir, B.E., "Reduction of dislocation density in heteroepitaxial MBE and RTCVD GexSi1-x grown on patterned Si substrates", Journal of Electronic Materials, 19 (7): 53-53 (1990)
  5. Xie, Y.H., Bean, J.C., "From porous Si to patterned Si substrate: Can misfit strain-energy in a continuous heteroepitaxial film be reduced", Journal of Vacuum Science & Technology B, 8 (2): 227-231 (1990)
  6. Xie, Y.H., Bean, J.C., "Heteroepitaxy of GexSi1-x on porous Si substrates", Journal of Applied Physics, 67 (2): 792-795 (1990)
1989
  1. Xie, Y.H., Luftman, H.S., Lopata, J., Bean, J.C., "Hydrogenation of molecular-beam epitaxial Ge0.36Si0.64 on Si", Applied Physics Letters, 55 (7): 684-686 (1989)
1987
  1. Bean, J.C., Leibenguth, R.E., Xie, Y.H., "Operation of a multiple-wafer silicon MBE apparatus", Journal of the Electrochemical Society, 134 (8B): C547-C547 (1987)
  2. Xie, Y.H., People, R., Bean, J.C., Wecht, K.W., "Evidence for a piezoelectric effect in coherently strained Ge0.2Si0.8 alloys on Si(001)", Journal of Vacuum Science & Technology B, 5 (3): 744-744 (1987)
1986
  1. Defresart, E., Xie, Y.H., Rhee, S.S., Wang, K.L., "Interaction of B2O3 with Si surface in silicon-MBE growth", Journal of Electronic Materials, 15 (5): 318-318 (1986)
  2. Xie, Y.H., People, R., Bean, J.C., Wecht, K.W., "Power loss by two-dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening", Applied Physics Letters, 49 (5): 283-285 (1986)
  3. Xie, Y.H., Wu, Y.Y., Wang, K.L., "Deep level defect study of molecular-beam epitaxially grown silicon films", Applied Physics Letters, 48 (4): 287-289 (1986)

1985

  1. Xie, Y.H., Wang, K.L., Kao, Y.C., "An investigation on surface conditions for Si molecular-beam epitaxial (MBE) growth", Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, 3 (3): 1035-1039 (1985)
  2. Kao, Y.C., Tejwani, M., Xie, Y.H., Lin, T.L., Wang, K.L., "Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular-beam epitaxy and reactive deposition epitaxy", Journal of Vacuum Science & Technology B, 3 (2): 596-599 (1985)
  3. Xie, Y.H., Wu, Y.Y., Wang, K.L., "Characterization of deep level defects in silicon films grown by molecular beam epitaxy (MBE)", Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy: 93-101 (1985)
Publications

Semiconductor Materials Research Laboratory, Department of Materials Science and Engineering, University of California, Los Angeles

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