Journal Publications

* "Fabrication of dislocation-free Si films under uniaxial tension via oxidation of porous Si substrates", Jeehwan Kim, Jae Young Lee, and Ya-Hong Xie, submitted for publication (2007).

* "A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates", Jeehwan Kim, Biyun Li, and Ya-Hong Xie, Applied Physics Letters, Vol 91, 252108 (2007).

1. “Capacitively induced high mobility two-dimensional electron gas in undoped Si/SiGe heterostructures with atomic-layer-deposited dielectric”, T.M. Lu, J. Liu, J. Kim, K. Lai, D.C. Tsui, and Y. H. Xie, Appl. Phys. Lett., 90, 182114 (2007).

2. “Study of the nickel metallization in macroporous silicon using wet chemistry”, X. Zhang, K.N. Tu, and Y.H. Xie, submitted to IEEE Trans. Semicond. Manufac.

3. “Nickel displacement deposition of porous silicon with ultrahigh aspect ratio”, C.K. Xu, Xi Zhang, K.N. Tu, Y.H. Xie, Journal of the Electrochemical Society, 154 (3), D170-D174, 2007.

4. “Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio”, C.K. Xu, M.H. Li, Xi Zhang, K.N. Tu, Y.H. Xie, Electrochimica Acta, 52 (12), 3901-3909, 2007.

5. “The fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates”, J.H. Kim and Y.H. Xie, Appl. Phys. Lett., v.89, 152117 (2006).

6. “Selective growth of Ge islands on nanometer-scale patterned SiO2/Si substrate by molecular beam epitaxy”, T.S. Yoon, Z.M. Zhao, J. Liu, Y.H. Xie, D.Y. Ryu, T.P. Russell, H.M. Kim and K.B. Kim, Appl. Phys. Lett., v.89, 063107 (2006).

7. “Emerging memory devices - nontraditional possibilities based on nanomaterials and nanostructures”, K. Galatsis, K.L.Wang, Y. Botros, Y. Yang, Y.H. Xie, J.F. Stoddart, R.B. Kaner, C. Ozhan, J.L. Liu, M. Ozkan, C.W. Zhou, and K.W. Kim, IEEE Cir. Dev. Mag., v.22[3], 12-21 (2006).

8. “Valley splitting of Si/Si1-xGex heterostructures in tilted magnetic fields”, K. Lai, T.M. Lu, W. Pan, D.C. Tsui, S. Lyon, J. Liu, Y.H. Xie, M. M¨uhlberger, and F. Schaffler, Phys. Rev. B, v.73, 161301(R) (2006).

9. “Single-step fabrication of nickel films with arrayed macropores and nanostructured skeletons”, X. Zhang, K.N. Tu, Y.H. Xie, C.H. Tung, and S.Y. Xu, Adv. Mat., v.18, 1905 (2006).

10.“High aspect ratio nickel structures fabricated by electrochemical replication of hydrofluoric acid etched silicon”, X. Zhang, K.N. Tu, Y.H. Xie, and C.H. Tung, Electrochem. Solid State Lett., v.9(9), C150 (2006).

11. “Three-dimensional impedance engineering for mixed-signal system-on-chip applications”, Kyuchul Chong and Ya-Hong Xie, in “Si-based RFIC”, W.Z. Cai, Editor, p.153-216, Transworld Research Publishers, publisher, 2006;

12. “Epitaxial growth of semiconductor self-assembled quantum dots”, H.J. Kim, Z.M. Zhao, B. Shi, J. Liu, and Y.H. Xie, submitted book chapter in “Handbook of Semiconductor Nanostructrues and Nanodevices”, A. A. Balandin and K.L. Wang, Editors, American Scientific Pulishers;

13. “Ge self-assembled quantum dots on nano-scale patterned Si substrate”, T.S. Yoon, Z.M. Zhao, W. Feng, B.Y. Li, J.H. Kim and Y.H. Xie, J. Crystal Growth, v.290, 369 (2006);

14. “The Challenges in Guided Self-assmbly of Ge and InAs Quantum Dots on Si”, Z.M. Zhao, T.S. Yoon, W. Feng, B.Y. Li, J.H. Kim, J. Liu, O. Hulko, Y.H. Xie, H.M. Kim, K.B. Kim, H.J. Kim, K.L. Wang, C. Ratsch, R. Caflisch, D.Y. Ryu, and T. P. Russell, Thin Solid Film vol.508, 195 (2006);

15. “Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for Mixed-signal System-on-chip,” K.C. Chong, X. Zhang, K.N. Tu, D.Q. Huang, M.C.F. Chang and Y.H. Xie, IEEE Trans Electron Device, vol.52(11), 2440 (2005).

16. “Low capacitance and high isolation bond pad for high frequency RFIC’s “, K.C. Chong and Y.H. Xie, IEEE Electron Device Lett., vol.26[10], 746 (2005).

17. “The metallic nickel inserted p-/p+ Si substrate used for RF crosstalk reduction in Mixed Signal ICs,” X. Zhang, K.C. Chong, Y.H. Xie, K.N. Tu, IEEE/CPMT international symposium on advanced packaging materials, pp.187-192, 2005.

18. “High performance on-chip transformers”, K.C. Chong and Y.H. Xie, IEEE Electron Device Lett., 26 [8], pp.557-559, 2005.

19. “Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers”, T.S. Yoon, J. Liu, A. Noori, M.S. Goorsky, and Y.H. Xie, Appl. Phys. Lett., vol. 87, 012104 (2005);

20. “Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)”, Z.M. Zhao, O. Hul’ko, H.J. Kim, J. Liu, B. Shi, and Y.H. Xie, Thin Solid Films, vol. 483, 158 (2005);

21. “High-performance inductors integrated on porous silicon”, K.C. Chong, Y.H. Xie, K.W. Yu, D.Q. Huang, and M.C.F. Chang, IEEE Electron Dev. Lett., vol. 26, 93 (2005);

22. “Growth and characterization of InAs quantum dots on Si (001) substrates”, Z. M. Zhao, O. Hulko, H. J. Kim, J. Liu, T. Sugahari, B. Shi and Y. H. Xie, J. Cryst. Growth, vol.271, 450 (2004);

23. “On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers”, H.J. Kim, J. Liu, Z.M. Zhao and Y.H. Xie, J. Vac. Sci. Technol. B22(4), 2257 (2004);

24. “Experimental investigation of Hall Mobility in Ge/Si quantum dot superlattices”, Y. Bao, A.A. Balandin, J.L. Liu, J. Liu, and Y.H. Xie, Appl. Phys. Lett., vol.84, 3355 (2004);

25. “The fractional quantum Hall effect at n=2/3 and 4/3 in strained Si quantum wells,” K. Lai, W. Pan, D.C. Tsui, and Y. H. Xie, Phys. Rev. B69, 125337 (2004);

26. “A novel technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si (001)”, H.J. Kim, Z.M. Zhao, J. Liu, V. Ozolins, and Y.H. Xie, J. Appl. Phys., vol.95, 6065 (2004);

27. “Observation of the apparent metal-insulator transition of high-mobility two-dimensional electron system in a Si/SiGe heterostructure”, K. Lai, W. Pan, D.C. Tsui, and Y.H. Xie, Appl. Phys. Lett., vol.84(2), 302 (2004).

28. “Three-stage Nucleation and Growth of Ge Self-Assembled Quantum Dots Grown on Partially Relaxed SiGe Buffer Layers,” H.J. Kim, Z.M. Zhao, and Y.H. Xie, Phys. Rev. B., vol.68, 205312 (2003);

29. “The importance of distributed grounding in combination with porous Si trenches for the reduction of RF crosstalk through p- Si substrate,” H.S. Kim, K.C. Chong, Y.H. Xie, and K.A. Jenkins, IEEE Electron Dev. Lett., vol.24(8), 640 (2003);

30. “Influence of coupling effect in the operation of vertically coupled quantum dot lasers”, Bin Shi and Y.H. Xie, Appl. Phys. Lett. Vol.82, 4788 (2003)

31. “Study of the cross-sectional profile in selective formation of porous silicon,” H.S. Kim, K.C. Chong, and Y.H. Xie, Appl. Phys. Lett., vol.83(13), 2710 (2003);

32. “The promising Role of Porous Si in Mixed-signal Integrated Circuit Technology,” H.S. Kim, K.C. Chong, and Y.H. Xie, Phys. Stat. Solidi, (a) Vol.197, 269 (2003);

33. “Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications”, H.S. Kim, Y.H. Xie, M. DeVincentis, T. Itoh, and K.A. Jenkins, J. Appl. Phys., Vol.93, 4226 (2003).

34. “Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001),” H.J. Kim, J.Y. Chang, and Y.H. Xie, J. Cryst. Growth, Vol. 247, 251 (2003);

35. “A porous Si based novel isolation technology for mixed-signal integrated circuits,” H.S. Kim, K.C. Chong, Y.H. Xie, M. Devincentis, T. Itoh, A.J. Becker, and K.A. Jenkins, Digest 2002 Symp. VLSI Techn., p.160 (2002);

36. “Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si,” H.S. Kim, K.A, Jenkins, and Y.H. Xie, Electron Dev. Lett. Vol.23(3), 160 (2002);

37. “Effective method for stress reduction in thick porous silicon films,” H.S. Kim, E.C. Zouzounis, and Y.H. Xie, Appl. Phys. Lett., Vol. 80(13), 2287 (2002);

38. “High room-temperature hole mobility in GeSi/Ge/GeSi modulation-doped heterostructures,” S. Madhavi, V. Venkataraman, and Y.H. Xie, J. App. Phys., Vol.89, 2497 (2001).

39. “Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001),” H.J. Kim and Y.H. Xie, Appl. Phys. Lett. Vol.79, 263 (2001).

40. "Spiral inductors on Si p/p+ substrates with resonant frequency of 20 GHz," Han-Su Kim, Dawei Zheng, A.J. Becker, and Ya-Hong Xie, IEEE Electron Dev. Lett., 22, no.6, 275 (2001);

41. "Use of Transient Enhanced Diffusion to Tailor Boron Out-diffusion," H.H. Vuong, Y.H. Xie, M.R. Frei, G. Hobler, L. Pelaz and C.S. Rafferty, IEEE Trans. Electron Dev., Vol. 47, 1401 (2000);

42. "Low and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells", S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, Phys. Rev. B, Vol.61, 16807, (2000);

43. “Phase diagram of the integer quantum Hall effect in p-type germanium”, M. Hilke, D. Shahar, S.H. Song, D.C. Tsui, and Y.H. Xie, Phys. Rev. B., Vol.62, 6940 (2000);

44. “SiGe Field Effect Transistors”, Y.H.Xie, Mat. Sci. & Eng., R25, 89 (1999).

45. “Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si”, L.P. Rokhinson, D.C. Tsui, J.L.Benton, and Y.H.Xie, Appl. Phys. Lett. 75, 2413 (1999).

46. “The Quantized Hall Insulator”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, M.Shayegan, and Y.H.Xie, Annalen der Physik, 8, 603 (1999).

47. “ Experimental Evidence for a two-dimensional quantized Hall insulator”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Nature, 395, 675 (1998).

48. “An Approach For Fabricating High Performance Inductors On Low Resistivity Substate”, Y.H. Xie, M.R. Frei, A.J. Becker, C.A. King, D. Kossives, L.T. Gomez, and S.K. Theiss, IEEE Journ. Solid State Circuits, 33, 1433 (1998);

49. “Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si”, G.P.Watson, J.L.Benton, Y.H.Xie, and E.A.Fitzgerald, Appl. Phys. Lett., 83, 3773 (1998);

50. “Symmetry in the insulator - quantum Hall - insulator transitions observed in a Ge/SiGe quantum well”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. B; 56, 15545 (1997);

51. “Relaxed Template for Fabricating Regularly Distributed Quantum Dot Arrays”, Y.H.Xie, S.B.Samavedam, M. Bulsara, T.A.Langdo, and E.A.Fitzgerald, Appl. Phys. Lett., 71, 3567 (1997);

52. “Energy relaxation of two-dimensional carriers in strained Ge/SiGe and Si/SiGe quantum wells: evidence for two-dimensional acoustic phonons”, S.H.Song, W.Pan, D.C.Tsui, Y.H.Xie, and Don Monroe, Appl. Phys. Lett., 70, 3422 (1997);

53. “Influence of strain on semiconductor thin film epitaxy”, E.A.Fitzgerald, S.B.Samavedam, Y.H.Xie, and L.M.Giovane, J. Vac. Sci. Technol. A, 15(3), 1048 (1997);

54. “Stress and temperature dependence of misfit dislocation nucleation rate in SiGe alloys: evidence of homogeneous nucleation”, S.M.Labovitz, Y.H.Xie, and D.P.Pope, Proc. Mat. Res. Soc., Spring, 1997;

55. “New Universality at the Magnetic Field Driven Insulator to Integer Quuantum Hall Effect Transitions”, S.H.Song, D.Shahar, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. Lett., 78, 2200 (1997);

56. "Strain field imaging on Si/SiGe(001)-(2x1) surfaces by low energy electron microscopy and scanning tunneling microscopy", D.E.Jones, J.P.Pelz, Y.Hong, I.S.T.Tsong, Y.H.Xie, and P.J.Silverman, Appl. Phys. Lett., 69, 3245, (1996).

57. "Study of electrically active defects in relaxed GeSi films using a near field scanning optical microscope", J.W.P.Hsu, E.A.Fitzgerald, Y.H.Xie, and P.J.Silverman, J. Appl. Phys., 79, 7743, (1996).

58. "Steady-state and time-resolved spectroscopy of silicon nanostructures", S.V.Gaponenko, E.P.Petrov, U.Woggon, O.Wind, C.Klingshirn, Y.H.Xie, I.N.Germanenko, and A.P.Stupak, J. Lumin., 70, 364 (1996);

59. "Influence of Ga vs. As prelayers on GaAs/Ge Growth Morphology", Q.Xu, J.W.P.Hsu, E.A.Fitzgerald, J.M.Kuo, Y.H.Xie, and P.J.Silverman, J. Electron, Mat. 25(6), 1009 (1996).

60. "Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces", Surf. Sci., 341, L1005, (1995).

61. "The Role of Strain in Silicon-Based Molecular Beam Epitaxy", Y.H.Xie and P.J.Silverman, J. Crystal Growth, 157, 113, (1995).

62. "Enhanced Step Waviness on SiGe (001)-(2x1) Surfaces Under Tensile Strain", D.E.Jones, J.P.Pelz, Y.H.Xie, P.J.Silverman, and G.H.Gilmer, Phys. Rev. Lett., 75 , 1570, (1995).

63. "Step Energies and Surface Roughening Under Bulk Strain", Y.H.Xie, G.H.Gilmer, C.Roland, P.J.Silverman, S.K.Buratto, J.Y.Cheng, E.A.Fitzgerald, A.R.Kortan, S.Schuppler, M.A.Marcus, and P.H.Citrin, Phys. Rev. Lett., 74, 4963, (1995).

64. "Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si", S.Schuppler, S.L.Friedman, M.A. Marcus, D.L.Adler, Y.H.Xie, F.M.Ross, T.D.Harris, W.L.Brown, Y.J.Chabal, P.J.Szajowski, E.E.Chaban, L.E.Brus, and P.H.Citrin, Mat. Res. Soc. Symp. Proc., 358, 407 (1995).

65. "Fabrication and Application of Relaxed Buffer Layers", Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, Mats. Sci. Engr., B30 , 201 (1995).

66. "Photodegradation of the luminescence of porous silicon during pulsed excitation", Y.H.Xie, I.N.Germanenko, V.F.Voronin, and S.V.Gaponenko, Semiconductors, 29, 350, (1995).

67. "Antidot Superlattices in Two-dimensional Hole Gases Confined in Strained Germanium Layers", D.Tobben, M.Holzmann, G.Abstreiter, A.Kriele, H.Lorenz, J.P.Kotthaus, F.Schaffler, Y.H.Xie, P.J.Silverman, and Don Monroe, Semicond. Sci. Techn., 10, 1413, (1995).

68. "Electron trapping kinetics at dislocations in relaxed Ge 0.3Si 0.7/Si heterostructures", E.A. Fitzgerald, G.P. Watson, Y.H. Xie, P.N. Grillot, S.A. Ringel, J. Appl. Phys., 77, 3248 (1995).

69. "Size, Shape, and Composition of Luminescent Species in Oxidized Si Nanoclusters and H-Passivated Porous Si", S.Schuppler, S.L.Friedman, M.A. Marcus, D.L.Adler, Y.H.Xie, F.M.Ross, Y.J.Chabal, T.D.Harris, L.E.Brus, W.L.Brown, E.E.Chaban, P.J.Szajowski, S.B.Christman and P.H.Citrin, Phys. Rev. B, 52(7) , 4910 (1995).

70. "Polarization of porous silicon luminescence", S.V.Gaponenko, V.K.Kononenko, E.P.Petrov, I.N.Germanenko, A.P.Stupak, and Y.H.Xie, Appl. Phys. Lett., 67, 3019, (1995).

71. "Minority and Majority Carrier Trapping in Strain Relaxed Ge0.3 Si0.7/Si Heterostructures Diodes Grown by Rapid Thermal Chemical-Vapor Deposition", P.N.Grillot, S.A.Ringel, E.A. Fitzgerald, G.P. Watson, and Y.H. Xie, J. Appl. Phys. Lett., 77, 676 (1995).

72. "Dimension of Luminescent Oxidized and Porous Silicon Structures", S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.H. Xie, S.M. Ross, T.D. Harris, W.L. Brown, Y.J. Chabal, L.E. Brus, P.H. Citrin, Phys. Rev. Lett., 72(16), 2648 (1994);

73. "Bulk Strain Induced Effects on Si/Ge(100) Surface Roughness", Y.H. Xie, G.H. Gilmer, C.M. Roland, P.J. Silverman, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, M.A. Marcus, P.H. Citrin, Proc. ICPS'94,

74. "Implication of Silicon Nanocrystallites from Combined Absorption and Luminescence Studies of Free-Standing Porous Silicon Films", Y.H. Xie, M.S. Hybertson, W.L. Wilson, Japan. J. Appl. Phys., 34, Suppl. 34-1, 257 (1994).

75. "Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain", Y.H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler, M.A. Marcus, P.H. Citrin, Phys. Rev. Lett., 73, 3006 (1994);

76. "Near-Field Scanning Optical Microscopy Imaging of Individual Threading Dislocations on Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman, Appl. Phys. Lett., 65(3), 344 (1994);

77. "The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-type Si0.7 Ge0.3 ", G.P. Watson, D.P. Monroe, J.Y. Cheng, E.A. Fitzgerald, Y.H. Xie, R.B. van Dover, Proceedings of Fall Materials Research Society Meeting, Boston, MA, 1994.

78. "Absorption and Luminescence Studies of Free-standing Porous Silicon Films," Y.H. Xie, M.S. Hybertsen, W.L. Wilson, S.A. Ipri, G.E. Carver, W.L. Brown, E. Dons, B.E. Weir, A.R. Kortan, G.P. Watson, and A.J. Liddle, Phys. Rev. B, 49(8), 5386 (1994);

79. "From Relaxed GeSi Buffers to FETs: Current Status and Future Prospects", Y.H. Xie, E.A. Fitzgerald, D.P. Monroe, G.P. Watson, P.J. Silverman, Japanese Journal of Appl. Phys., part I, 33, 2372 (1994).

80. "Light Emission From Silicon", S.S.Iyer and Y.H.Xie, Chapter 4 of the book "Porous Silicon", Z.C.Feng and R.Tsu, Ed., World Scientific Pub., New Jersey, 1994.

81. “Relaxed, low threading defect density Si0.7 Ge0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition”, G.P.Watson, E.A.Fitzgerald, Y.H.Xie, D.P.Monroe, J. Appl. Phys., 75(1), 263 (1994).

82. “Light Emission From Silicon”, S.S. Iyer, Y.-H. Xie, Science, 260, 40 (1993).

83. "Gas/Source Molecular Beam Epitaxy of InGaP and GaAs on Strain-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman; J. Vac. Sci. Technol. B, 11(3), 857 (1993);

84. "Electronic Characterization of Dislocations in RTCVD Germanium-Silicon/Silicon Grown by Graded Layer Epitaxy", G.P. Watson, E.A. Fitzgerald, Y.H. Xie, P.N. Grillot, S.A. Ringel, Proceedings Materials Research Society Fall Meeting, Boston, MA, Nov/Dec, 1993.

85. "Defect Control in Relaxed, Graded GeSi/Si," E.A. Fitzgerald, Y.-H. Xie, D.P. Monroe, G.P. Watson, J.M. Kuo, P.J. Silverman, Proceedings of ICDS'17, Gmunden, Austria, 7/19-23, 1993;

86. "Very High Mobility Two-Dimensional Hole Gas in Si/GexSi1-x/Ge Structures Grown by Molecular Beam Epitaxy," Y.-H. Xie, D.P. Monroe, E.A. Fitzgerald, P.J. Silverman, F.A. Thiel, G.P. Watson, Appl. Phys. Lett., 63(16), 2263 (1993);

87. "The Necessity of Ga Pre-Layers in GaAs/Ge Growth Using Gas-Source Molecular Beam Epitaxy," E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, P.J. Silverman, Appl. Phys. Lett., (1993);

88. "Comparison of Mobility-limiting Mechanisms in High-mobility Si1-x Gex heterostructures," D. Monroe, Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, and G.P. Watson, J. Vac. Sci. Technol. B, 11(4), 1731 (1993);

89. "Correlation Between Defect Density and Process Variables in Step-Graded Relaxed Si0.7Ge0.3 Grown on Si by RTCVD," G.P. Watson, E.A. Fitzgerald, B. Jalali, Y.-H. Xie, B.E. Weir, Proc. Mat. Res. Soc., Spring 1993;

90. "Unimportance of Siloxane in Luminescense of Porous Silicon," S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, T.D. Harris, P. Citrin, Appl. Phys. Lett., 62(16), 1934 (1993);

91. "Fabrication of High Mobility Two-Dimensional Electron and Hole Gases," Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, P.J. Silverman, G.P.Watson, J. Appl. Phys., 73(12), 8364 (1993);

92. "Controlled Misfit Dislocation Nucleation in Si0.90 Ge0.10 Epitaxial Layers Grown on Si," G.P. Watson, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, A.E. White, K.T. Short, Appl. Phys. Lett., 63(6), 746 (1993);

93. "Process and Defect Induced Surface Morphology of Relaxed SiGe Films," J.W.P. Hsu, M. Cardillo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, Scan. Probe Microscopies II, 118 (1993);

94. "Gas Source Molecular Beam Epitaxy of InGaP and GaAs on Strained-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Vac. Sci. Technol. B, 11(3), 857 (1993);

95. “Characterization of Compositionally Graded Si1-x Gex Alloy Layers by Photoluminescence Spectroscopy and by Cathodoluminescence Spectroscopy and Imaging”, V. Higgs, E.C. Lightowlers, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Appl. Phys., 73, 1952 (1993).

96. "Quanticized Hall Effects in High Electron Mobility Si/Ge Structures", D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J. Silverman, Phys. Rev., B46, 7935 (1992).

97. "Photoluminescence Investigations of Graded, Totally Relaxed Gex Si 1-x Structures," J.Michel, E.A.Fitzgerald, Y.H.Xie, P.J.Silverman, M.Morse and L.C.Kimerling, J. Electron. Mat., 21, 1099 (1992).

98. "Transport in High-Mobility Si1-x Gex Heterostructures Grown by Molecular Beam Epitaxy," D.P. Monroe, Y.-H. Xie, E.A. Fitzgerald, P.J. Silverman, Proc. Mat. Res. Soc., Fall (1992);

99. “Relaxed GeSi structures for III-V integration with Si and high mobility two-dimensional electron gases in Si”, E.A. Fitzgerald, Y.H. Xie, D. Monroe, P.J. Silverman, J.M. Kuo, A.R. Kortan, F.A. Thiel, and B.E. Weir, J. Vac. Sci. Technol. B, vol.10(4), 1807 (1992);

100. "Advances in Silicon Based Heterostructures and Very High Mobility Two-Dimensional Carrier Gases", Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, P.J. Silverman, A.R. Kortan, B.E. Weir, F.A. Thiel, G.P. Watson, L.C. Feldman, Proc. 21st Internat. Conf. Phys. Semicond., Beijing, China, 1992.

101. "Fabrication of Relaxed GeSi Buffer Layers on Si (100) With Low Threading Dislocation Density," Y.H.Xie, E.A.Fitzgerald, P.J.Silverman, A.R.Kortan and B.E.Weir, Mat. Sci. & Eng., B14, 332 (1992).

102. "Surface Morphology of Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, M.J. Cardillo, Appl. Phys. Lett., 61, 1293 (1992).

103. "Luminescence and Structural Study of Porous Silicon Films", Y.H. Xie, W. L. Wilson, F. M. Ross, J. A. Mucha, E. A. Fitzgerald, J. M. Macaulay, T. D. Harris, J. Appl. Phys., 71, 2403 (1992).

104. "Extremely High Electron Mobility in Si/Gex Si1-x Structures Grown by Molecular Beam Epitaxy", Y.J. Mii, Y.-H. Xie, E. A. Fitzgerald, D. Monroe, F. A. Thiel, B. E. Weir, and L. C. Feldman, Appl. Phys. Lett., 59, 1611 (1991).

105. "Evaluation of Erbium Doped Silicon for Optoelectronic Applications", Y.-H. Xie, E.A. Fitzgerald, and Y.-J. Mii, J. Appl. Phys., 70, 3223 (1991).

106. "Molecular Beam Epitaxial Growth of Very High Mobility Two Dimensional Electron Gases in Si/GeSi Heterostructures", Y.-H. Xie, E.A. Fitzgerald, Y.-J. Mii*, D. Monroe, F. A. Thiel, B.E. Weir, L.C. Feldman, Proc. Mat. Res. Soc. Symp., 220 , 413 (1991).

107. "Strain-Free Gex Si1-x Layers with Low Threading Dislocation Densities Grown on Si strates", E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, Y.-J. Mii*, J. Michel*, B.E. Weir, L.C. Feldman, J.M. Kuo, Proc. Mat. Res. Soc. Symp., 220, 211 (1991).

108. "Dopant Enhancement of the 1.54 m Emission of Erbium Implanted in Silicon", J. Michel*, L.C. Kimerling, J.L. Benton, D. J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J. M. Poate, Y.-H. Xie, and R.F. Ferrante, Proc. Internat. Conf. Defects and Semicond., Leigh, PA, 1991.

109. "Growth of Gex Si1-x /Si Alloys on Si(100), (110) and (111) Surfaces", R. Hull, J.C. Bean, L. Peticolas, Y.-H. Xie, Y.-F. Shieh, Proc. Mat. Res. Soc. Symp., 220, 153 (1991).

110. "Columnar Structure Growth by Silicon Molecular Beam Epitaxy", Y.-H. Xie, G.H. Gilmer, and E.A. Fitzgerald, Proc. Mat. Res. Soc. Symp., 220, 41 (1991).

111. "The Electrical and Defect Properties of Erbium-Implanted Silicon", J.L. Benton, J. Michel, L.C. Kimerling, D.C. Jacobson, Y.-H. Xie, D.J. Eaglesham, E.A. Fitzgerald, and J.M. Poate, J. Appl. Phys., 70, 2667 (1991).

112. "Strain Relaxation in Ge.09 Si .91 Epitaxial Thin Films Measured by Wafer Curvature", C.A. Volkert, E.A. Fitzgerald, R. Hull, Y.-H. Xie, and Y.-J. Mii, J. Electron. Mats., 20, 833 (1991).

113. "Totally Relaxed Gex Si11-x Layers with Low Threading Dislocation Densities Grown on Si Substrates", E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, and B.E. Weir, Appl. Phys. Lett., 59, 811 (1991).

114. "The Microstructure of Erbium-Implanted Si", D. J. Eaglesham, J. Michel, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, J.L. Benton, A. Polman, Y.-H. Xie, L.C. Kimerling, Appl. Phys. Lett., 58, 2797 (1991).

115. "Epitaxially Stabilized Gex Sn1-x Diamond Cubic Alloys", E.A. Fitzgerald, P.E. Freeland, M. T. Asom, W. Lowe, R. MacHarrie, B. E. Weir, A. R. Kortan, F.A. Thiel, Y.-H. Xie, A. M. Sergent, S. L. Cooper, G. A. Thomas, and L.C. Kimerling, J. Elec. Mats., 20, 489 (1991).

116. "Impurity Enhancement of the 1.54 m Er 3+ Luminescene in Silicon," J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J.M. Poate, and L. C. Kimerling, J. Appl. Phys., 70, 2672 (1991).

117. "Selective Epitaxial Growth in Deep Trenches for Integrated Photodetector Applications," Y. H. Xie, R. P. Jindal, J. L. Benton, C. L. Paulnack, P. H. Langer and A. J. Miller, J. Electrochem. Soc., 137, 3559 (1990).

118. "Reduction of Defect Density in Heteroepitaxial Gex Si1-x Grown on Patterned Si Substrates,"E. A. Fitzgerald, P. E. Freeland and Y. H. Xie, Mat. Res. Soc. Symp. Proc., 160, 59 (1990).

119. "A Re-evaluation of Hetero-Epitaxy of Continuous Films on Patterned Substrates," Y. H. Xie, Thin Solid Films, 188, L1 (1990).

120. "From Porous Si to Patterned Si strates: Can Misfit Strain Energy in a Continuous Heteroepitaxial Film be Reduced?" Y. H. Xie and J. C. Bean, J. Vac. Sci. Technol., B8, 227, (1990).

121. "Heteroepitaxy of Gex Si1-x on Porous Si Substrates," Y. H. Xie and J. C. Bean, J. Appl. Phys., 67(2), 792 (1990).

122. "Hydrogenation of Molecular Beam Epitaxial Ge0.36 Si0.64 on Si," Y. H. Xie, H. S. Luftman, J. Lopata and J. C. Bean, Appl. Phys. Lett., 55(7), 684 (1989).

123. "Summary Abstract: Evidence for a Piezoelectric Effect in Coherently Strained Ge0.2 Si0.8 Alloys on Si(001)," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, J. Vac. Sci. Technol., B5, 744 (1987).

124. "Power Loss by Two-Dimensional Holes in Coherently Strained Ge0.2 Si0.8 /Si Heterostructures: Evidence for Weak Screening," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, Appl. Phys. Lett., 49(5), 283 (1986).

125. "Deep-Level Defect Study of Molecular Beam Epitaxially Grown Silicon Films," Y. H. Xie, Y.Y. Wu and K. L. Wang, Appl. Phys. Lett., Jan. 27, (1986).

126. "Uniformity and Crystalline Quality of CoSi2 /Si Heterostructures Grown by Molecular Beam Epitaxy and Reactive Deposition Epitaxy," Y. C. Kao, M. Tejwani, Y. H. Xie, T. L. Lin and K. L. Wang, J. Vac. Sci. Technol., B3(2), 596 (1985).

127. "Characterization of Deep-Level Defects in Silicon Films Growth by Molecular Beam Epitaxy (MBE)," Y. H. Xie, Y.Y. Wu and K. L. Wang, Proc. First Internat. Symp. Silicon Molecular Beam Epitaxy (ECS), p.93, Toronto, Canada, (1985).

128. "An Investigation on Surface Conditions for Si Molecular Beam Epitaxy (MBE) Growth," Y. H. Xie, K. L. Wang and Y. C. Kao, J. Vac. Sci. Technol., A3(3), 1035 (1985).