backN-H... .,CRYSTAL GROWTH ELSEVIER Journal of CrYstal Growth 151 (1995) 204-212
A diffusion model for selective-area epitaxy by metalorganic chemical vapor deposition
Brian Korgel, Robert F. Hicks*
Department of Chemical Engineering, 5531 Boelter Hall, University of California, Los Angeles, California 90024-1592, USA
Received I September 1994; manuscript received in final form 19 December 1994
Abstract
A single-species diffusion model for selective-area epitaxy bv metalorganic chemical vapor deposition (MOCVD) has been developed. The model is solved analytically using conformal mapping and a new parameter, beta (p) which accounts for the probability that an organometallic compound will reach the window by surface diffusion on the mask. The model correctly predicts the trends observed in selected-area growth rates with mask and window sizes. The model also reveals that different values of beta for the group III sources leads to a dependence of the alloy composition on the feature size. This new model can be used as a design tool to identify mask materials and process conditions leading to successful selected-area growth processes.