backVOLUME 72, NUMBER 2 PHYSICAL REVIEW LETTERS 10 JANUARY 1994
Infrared Study of Hydrogen Adsorbed on c(2 x 8) and (2 x 6) GaAs(100)
Haihua Qi, Paul E. Gee, and Robert F. Hicks
Chemical Engineering Department, University of California, Los Angeles, Los Angeles, California 90024-1592
(Received 3 June 1993)
The infrared spectra of adsorbed hydrogen and deuterium on c(2x8) and (2x6) GaAs(100) contain a series of bands from 2200 to 1200 (1600 to 1000) /cm that are due to arsenic hydrides, terminal gallium hydrides, and bridging gallium hydrkles (and deuterides). The latter is the first known example of bridge-bonded hydrogen on a semiconductor surface. Polarized spectra reveal that the AsH and GaH bonds orient along the [-11O] and [110] axis, respectively. These results are consistent with a surface structure composed of As and Ga dimcrs with dimcr bonds in the [-110] and [110] directions.
PACS numbers: 69.35Bs 78.30.Fs, 81.60.Cp, 82.65.My