bulletSurfaces of GaAs (001) in MOCVD

 

     Shown below are atomic resolution images of the reconstructions of of GaAs (100) produced in the MOCVD reactor. 

     To learn more, check out some of our publications.

     Click images to view a 3-D model of the structure.

 

(1x2), right out of reactor.

 

c(4x4), after UHV annealing to 350 oC.

 

(2x4), after UHV annealing to 500oC.

(2x6), after annealing to 570oC.

 

(4x2), after UHV annealing to 600oC.

 

 

Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles.

For information, please contact Professor Robert F. Hicks
Last Modified May 21, 2007 05:58 PM