Recent Publications

     Our laboratory has published over a hundred journal papers.  Below we list recent papers describing our research on metalorganic chemical vapor deposition and plasma processing.

     Electronic copies are provided wherever possible.  However, the publishers have retained copyrights to the articles, and you may not copy them without first obtaining their permission.  Thank you for your interest in our work!

[See our 3 articles in the top 25 downloads from PSST, here!]

  1. Qi, H., Gee, P. E., and Hicks, R. F., "Sites for Arsine Adsorption on GaAs (001)," Surf. Sci. 347, 289-302, 1996.

  2. Kappers, M. J., McDaniel, A. H., and Hicks, R. F., "Controlling the Group II Composition in CdZnTe Alloys Grown by Organometallic Vapor-Phase Epitaxy: A Kinetic Model," J. Crystal Growth 160, 310-319, 1996.

  3. Adamson, S. D., Han, B. K., and Hicks, R. F., "Site-specific Reaction Kinetics for Gallium Arsenide Metalorganic Vapor-Phase Epitaxy," Appl. Phys. Lett., 3236-3239, 69, 1996.

  4. Au, W. K., Kappers, M. J., and Hicks, R. F., "Evaluation of a Zero-Discharge Reactor for the Metalorganic Chemical Vapor Deposition of Mercury Telluride," J. Crystal Growth 174, 386-392, 1997.

  5. Wilkerson, K. J., Kappers, M. J., and Hicks, R. F., "Reaction Chemistry of Zinc Telluride Metalorganic Vapor-Phase Epitaxy," J. Phys. Chem. A, 101, 2451-2458, 1997.

  6. Kappers, M. J., Wilkerson, K. J., and Hicks, R. F., "Effects of Ligand Exchange Reactions on the Composition of Cd1-yZnyTe Grown by Metalorganic Vapor-Phase Epitaxy," J. Phys. Chem. B, 101, 4882-4888, 1997.

  7. Kappers, M. J., Warddrip, M. L., Wilkerson, K. J., and Hicks, R. F., "Ligand Exchange Reactions in Organometallic Vapor-Phase Epitaxy," J. Electron. Mater., 26, 1169-1174, 1997.

  8. Warddrip, M. L., Kappers, M. J., Li, L., Qi, H., Han, B. K., Gan, S., and Hicks, R. F., "Mechanism of Doping Gallium Arsenide with Carbon Tetrachloride During Organometallic Vapor-Phase Epitaxy," J. Electron. Mater., 26, 1189-1194, 1997.

  9. Han, B. K., Li, L., Kappers, M. J., Hicks, R. F., Yoon, H., Goorsky, M. S., and Higa, K. T., "Characterization of InGaAs/GaAs(001) Films Grown by Metalorganic Vapor-Phase Epitaxy," J. Electron. Mater., 27, 81-84, 1998.

  10. Li, L, Gan, S., Han, B.K., Qi, H., and Hicks, R. F., "The Reaction of Carbon Tetrachloride with Gallium Arsenide (001)," Appl. Phys. Lett., 72, 951-953, 1998.

  11. Gan, S., Li, L., Nguyen, T., Qi, H., and Hicks, R. F., "Scanning-Tunneling Microscopy of Chemically Cleaned Germanium (100) Surfaces," Surf. Sci., 395, 69-74, 1998.

  12. Li, L., Han, B. K., Gan, S., Qi, H., and Hicks, R. F., "Observation of the Atomic Surface Structure of GaAs (001) Films Grown by Metalorganic Chemical Vapor Deposition," Surf. Sci., 398, 386-394, 1998.

  13. Li, L, Han, B. K., Hicks, R. F., Yoon, H., and Goorsky, M. S., "Atomic Structure of the InxGa1-xAs/GaAs (001) (2x4) and (3x2) Surfaces," Ultramicroscopy, 73, 229-235, 1998.

  14. Li, L., Qi, H. Gan, S., Han, B. K., and Hicks, R. F., "Site-Specific Chemistry of Carbon Tetrachloride Decomposition on GaAs(001)," Appl. Phys. A. 66, S501-S505, 1998.

  15. Han, B. K., Li, L, Fu, Q., and Hicks, R. F., "Structure and Composition of the c(4x4) Reconstruction Formed During Gallium Arsenide Metalorganic Vapor-Phase Epitaxy," Appl. Phys. Lett. 72, 3347-3349, 1998.

  16. Jeong, J. Y., Babayan, S. E., Tu, V. J., Henins, I., Velarde, J., Selwyn, G. S., and Hicks, R. F., "Etching Materials with an Atmospheric-Pressure Plasma Jet," Plasma Sources Sci. and Tech. 7, 282-285, 1998.

  17. Babayan, S. E., Jeong, J. Y., Tu, V., Selwyn, G. S., and Hicks, R. F., "Deposition of Glass Films with an Atmospheric-Pressure Plasma Jet," Plasma Sources Sci. and Tech. 7, 286-288, 1998.

  18. Gan, S., Li, L., and Hicks, R. F., "Characterization of Dislocations in Germanium Substrates Induced by Mechanical Stress," Appl. Phys. Lett. 73, 1068-1070, 1998.

  19. Li, L., Han, B. K., and Hicks, R. F., "Surface Phases of GaAs and InAs (001) Found in the Metalorganic Vapor-Phase Epitaxy Environment," Appl. Phys. Lett. 73, 1239-1241, 1998.

  20. Kappers, M. J., Warddrip, M. L., and Hicks, R. F., "Ligand Exchange Reactions in InGaAs Metalorganic Vapor-Phase Epitaxy," J. Crystal Growth, 191, 332-340, 1998.

  21. Begarney, M. J., Warddrip, M. L., Kappers, M. J., and Hicks, R. F., "Kinetics of Carbon Tetrachloride Decomposition During the Metalorganic Vapor-Phase Epitaxy of Gallium Arsenide and Indium Arsenide," J. Crystal Growth, 193, 305-315, 1998.

  22. Schütze, A., Jeong, J. Y., Babayan, S. E., Park, J., Selwyn, G. S., and Hicks, R. F., "The Atmospheric-Pressure Plasma Jet: A Review and Comparison to other Plasma Sources," IEEE Trans. Plasma Sci., 26, 1685-1694, 1998.

  23. Li, L., Han, B. K., Law, D., Begarney, M. J., and Hicks, R. F., "Gallium Arsenide and Indium Arsenide Surfaces Produced by Metalorganic Vapor-Phase Epitaxy," J. Crystal Growth, 195, 28-33, 1998.

  24. Gan, S., Li, L., Begarney, M. J., Law, D., Han, B. K., and Hicks, R. F., "Step Structure of Arsenic-Terminated Vicinal Ge (100)," J. Appl. Phys., 85 2004-2006, 1999.

  25. Li, L., Han, B. K., Fu, Q., and Hicks, R. F., "An Example of a Compound Semiconductor Surface that Mimics Silicon: The InP (001) (2x1) Reconstruction," Phys. Rev. Lett. 82, 1879-1882, 1999.

  26. Hicks, R. F., Qi, H., Fu, Q., Han, B. K., and Li, L., "Hydrogen Adsorption Sites on GaAs (001) Reconstructions," J. Chem. Phys. 110, 10498-10508, 1999.

  27. Begarney, M. J., Li, L., Han, B.-K., Law, D. C., Li, C., Yoon, H., Goorsky, M. S., and Hicks, R. F., "Formation of Etch Pits during Carbon Doping of Gallium Arsenide with Carbon Tetrachloride by Metalorganic Vapor-Phase Epitaxy," J. Appl. Phys. 86, - ,1999.

  28. Li, L., Han B. -K., Law, D, Li, C. H., Fu, Q., and Hicks, R. F., “A Phosphorous-Rich Structure of InP(001) Produced by Metalorganic Vapor-Phase Epitaxy,” Appl. Phys. Lett. 75, 683-685, 1999.

  29. Fu, Q., Li, L., Begarney, M. J., Han, B.-K., Law, D. C. and Hicks, R. F., "Site-Specific Chemistry of Gallium Arsenide Metalorganic Chemical Vapor Deposition," J. Phys. IV France 9, 3-14,1999.

  30. Jeong, J. Y., Babayan, S. E., Schütze, A., Tu, V. J., Park, J. Y., Henins, I., Selwyn, G. S., and Hicks, R. F., "Etching Polyimide with a Non-Equilibrium Atmospheric-Pressure Plasma Jet," J. Vac. Sci. Technol. A 1. 17, 2581-2585, Sep/Oct 1999.

  31. Park, J., Henins, I., Herrmann, H. W., Selwyn, G. S., Jeong, J. Y., Hicks, R. F., Shim, D., Chang, C. S., "An Atmospheric Pressure Plasma Source," Appl. Phys. Lett. 76(3), 288-290, 2000.

  32.  Li, L., Fu, Q., Han, B. -K., Li, C. H., and Hicks, R. F., “Determination of Indium Phosphide (001) Surface Reconstructions by Scanning Tunneling Microscopy and Infrared Spectroscopy of adsorbed hydrogen,” Phys. Rev. B, 61, 10 223-10228, 2000.

  33. Fu, Q., Li, L., and Hicks, R. F., "Ab Initio Cluster Calculations of Hydrogenated GaAs (001) Surfaces", Phys. Rev. B, 61, 11 034-11 040, 2000.

  34. Fu, Q., Li, L., Li, C. H., Law, D. C., Begarney, M. J., and Hicks, R. F., "Arsine Adsorption on the Gallium-Rich GaAs (001) (4x2) Surface," J. Phys. Chem. B, 104, 5595-5602, 2000.

  35. Law, D. C., Li, L., Begarney, M. J., Hicks, R. F., "Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy". J. Appl. Phys., 88, 508-512, 2000.

  36. Jeong, J. Y., Park, J. Y. Henins, I., Babayan, S. E., Tu, V. J., Selwyn, G. S., Ding, G., and Hicks, R. F., "Reaction Chemistry in the Afterglow of an Oxygen-Helium, Atmospheric-Pressure Plasma," J. of Phys. Chem. A; 104(34); 8027-8032, 2000.

  37. Tu, V. J., Jeong, J. Y., Schütze, A., Babayan, S. E., Selwyn, G. S., Ding, G., and Hicks, R. F., “Tantalum Etching with a Non-Thermal Atmospheric-Pressure Plasma,” J. Vac. Sci. Technol. A 18, 2799-2805, 2000.

  38. Begarney, M. J., Li, L., Li, C. H., Law, D. C., Fu, Q., and Hicks, R. F., “Reflectance-Difference Spectroscopy of Mixed Arsenic-Rich Phases of Gallium Arsenide (001),” Phys. Rev. B, 62, 8092-8097, 2000.

  39. Li, C. H., Li, L., Fu, Q. Begarney, M. J., and Hicks, R. F., “Stress-Induced Anisotropy of Phosphorous Islands on Gallium Arsenide,” Appl. Phys. Lett.,77, 2139-2141, 2000.

  40. Park, J., Henins, I., Herrmann, H. W., Selwyn, G. S., Hicks, R. F., "Discharge Phenomena of an Atmospheric Pressure Radio-Frequency Capacitive Plasma Source," J. Appl. Phys. 89, 20-28, 2001.

  41. Begarney, M. J.; Li, C. H.; Law, D. C.; Visbeck, S. B.; Sun, Y.; Hicks, R. F. "Reflectance Difference Spectroscopy of Mixed Phases of Indium Phosphide (001)." Appl. Phys. Lett., 78, 55-57, 2001.

  42. Babayan, S. E., Jeong, J. Y., Schutze, A., Tu, V. J., Moravej, M., Selwyn, G. S., Hicks, R. F., "Deposition of Silicon Dioxide Films with a Non-Equilibrium Atmospheric-Pressure Plasma Jet," Plasma Sources Sci. Technol. 10, 573-578, 2001.

  43. Babayan, S. E., Ding, G., Hicks, R. F., "Determination of the Nitrogen Atom Density in the Afterglow of a Nitrogen and Helium, Nonequilibrium, Atmospheric Pressure Plasma," Plasma Chem. Plasma Process. 21, 505-521, 2001.

  44. Law, D. C., Fu, Q., Visbeck, S. B.,  Sun, Y., Li, C. H., Hicks, R. F. "Hydrogen Atoms as a Probe of the Optical Anisotropy of Indium Phosphide (001)." Surf. Sci., 496, 121-128, 2001.

  45. Fu, Q., Negro, E., Chen, G., Law, D. C., Li, C. H., Hicks, R. F. "Hydrogen adsorption on phosphorus-rich (2x1) indium phosphide (001)." Phys. Rev. B, 65, 75318-75324, 2002.

  46. Fu, Q., Begarney, M. J., Li, C. H., Law, D. C., Hicks, R. F., "Phase Transitions of III-V Compound Semiconductor Surfaces in the MOVPE Environment," J. Cryst. Growth 225, 405-409, 2001.

  47. Nowling, G. R., Babayan, S. E., Jankovic, V., Hicks, R. F., "Remote Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride at Atmospheric Pressure," Plasma Sources Sci. Technol.  11, 97-103, 2002.

  48. Babayan, S. E., Ding, G., Nowling, G. R., Yang, X., Hicks, R. F.,  “Characterization of the Active Species in the Afterglow of a Nitrogen and Helium Atmospheric-Pressure Plasma," Plasma Chem. Plasma Process. 22, 255-269, 2001.

  49. Chen, G. Visbeck, S. B., Law, D. C., and Hicks, R. F., "Structure-Sensitive Oxidation of the Indium Phosphide (001) Surface," J. Appl. Phys. 91, 9362-9367, 2002.

  50. Li, C. H., Li, L., Law, D. C., Visbeck, S. B., and Hicks, R. F., “Arsenic Adsorption and Exchange with Phosphorus on Indium Phosphide (001),” Phys. Rev. B.  65, 205322/1-205322/7, 2002.

  51. Sun, Y., Law, D. C., Visbeck, S. B., Hicks, R. F. "Kinetics of Tertiarybutylphosphine Adsorption and Phosphorus Desorption from Indium Phosphide (001)," Surf. Sci. 513, 256-262, 2002.

  52. Law, D. C., Sun, Y., Li, C. H., Visbeck, S. B., Chen, G., and Hicks, R. F., “Structure of Arsenic-Treated Indium Phosphide (001) Surfaces During Metalorganic Vapor-Phase Epitaxy,” Phys. Rev. B, 66, 45314-45321, 2002.

  53. Raghavachari, K., Fu, Q., Chen, G., Li, L., Li, C. H., Law, D. C., and Hicks, R. F., "Hydrogen Adsorption on the Indium-Rich Indium Phosphide (001) Surface: A Novel Way to Produce Bridging In-H-In Bonds," J. Am. Chem. Soc. 124, 15119-15124, 2002.

  54. Li, C. H., Sun, Y., Visbeck, S. B., Law, D. C., and Hicks, R. F., "Reflectance Difference Spectroscopy of an Ultra-Thin Indium Arsenide Layer on Indium Phosphide (001)," Appl. Phys. Lett. 81, 3939-3941, 2002.

  55. Sun, Y., Law, D. C., and Hicks, R. F., "Kinetics of phosphine adsorption and phosphorus desorption from gallium and indium phosphide (001)," Surf. Sci. 540, 12-22, 2003.

  56. Li, C. H., Law, D. C., Sun, Y., Visbeck, S. B., and Hicks, R. F., “The (√3×√3)R30o Reconstruction of the InP (111)A Surface,” Phys. Rev. B 68, 085320-1-5, 2003.

  57. Yang, X., Babayan, S. E., and Hicks, R. F., "Measurement of the fluorine atom concentration in a carbon tetrafluoride and helium atmospheric-pressure plasma," Plasma Sources Sci. Technol. 12, 484-488, 2003.

  58. Chen, G., Cheng, S. F., Tobin, D. J., Li, L., Raghavachari, K., and Hicks, R. F., "Indium Phosphide (001)-(2x1): Evidence for a Hydrogen-Stabilized Surface Reconstruction," Phys. Rev. B, Rapid Comm. 68, 121303-1-3, 2003.

  59. Law, D. C., Sun, Y., and Hicks, R. F., "Reflectance difference spectroscopy of gallium phosphide (001) surfaces," J. Appl. Phys. 94, 6175-6180, 2003.

  60. Moravej, M., Babayan, S. E., Nowling, G. R., Yang, X., and Hicks, R. F., "Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon at Atmospheric Pressure," Plasma Sources Sci. Technol., 13, 8-14, 2004.

  61. Yang, X., Moravej, M., Babayan, S. E., Nowling, G. R., and Hicks, R. F., "Etching of Uranium Oxide with a Non-Thermal, Atmospheric Pressure Plasma," J. Nucl. Mater. 324, 134-139, 2004.

  62. Nowling, G. R., Yang, X., Moravej, M., Agarwal, R., and Hicks, R. F., "The Reactions of Silane in the Afterglow of a Helium-Nitrogen Plasma," Plasma Sources Sci. Technol. 13, 156-163, 2004.

  63. Moravej, M., Babayan, S. E., Yang, X., Nowling, G. R., and Hicks, R. F., “Physics of high-pressure helium and argon radio-frequency plasmas,” J. Appl. Phys. 96, 7011-7017, 2004.

  64. Chen G., Cheng D., Hicks R. F., Noori A. M., Hayashi S. L., Goorsky M. S., Kanjolia R., and Odedra R.,  "Metalorganic Vapor-phase Epitaxy of III/V Phosphides with Tertiarybutylphosphine and Tertiarybutylarsine," J. Crystal Growth, 270, 322-328, 2004.

  65. Sun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G. and Biefeld, R. M., “The role of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001),” J. Appl. Phys. 97, 053503-1-6, 2005.

  66. Nowling, G. R. Yajima, M., Babayan, S. E., Moravej, M., Yang, X., Hoffman, W., and Hicks, R. F., “Chamberless Plasma Deposition of Glass Coatings on Plastic,” Plasma Sources Sci. Technol., 14, 477-484, 2005.

  67. Yang, X., Moravej, M., Nowling, G. R., Chang, J. P., and Hicks, R. F., “Operating Modes of an Atmospheric Pressure Radio-Frequency Plasma,” IEEE Trans. Plasma Sci., 33(2), 294-295, 2005.

  68. Yang, X., Moravej, M., Nowling, G. R., Babayan, S. E., Penelon, J., Chang, J. P., and Hicks, R. F., “Comparison of an Atmospheric Pressure, Radio-Frequency Discharge Operating in the a and g Modes,” Plasma Sources Sci. Technol. 14, 314-320, 2005.

  69. Moravej, M., and Hicks, R. F., “Atmospheric Plasma Deposition of Coatings Using a Capacitive Discharge Source,” Chemical Vapor Deposition, accepted March 17, 2005.

  70. Yang, X., Moravej, M., Babayan, S. E., Nowling, G. R., and Hicks, R. F., “High Stability of Atmospheric Pressure Plasmas Containing Carbon Tetrafluoride and Sulfur Hexafluoride,” Plasma Sources Sci. Technol., 14, 412-418, 2005.

  71. Sun, Y., Cheng, S. F., Chen, G., Woo, R. L., and Hicks, R. F., “The Structure of Indium Phosphide (001) Treated with Trimethylantimony in a Metalorganic Vapor-Phase Epitaxy Reactor,” J. Appl. Phys., 97, 103512-1-5, 2005.

  72. Cheng, S. F., Sun, Y., Law, D. C., Visbeck, S. B., and Hicks, R. F., “Structure of ordered and disordered InxGa1-xP(001) surfaces prepared by metalorganic vapor-phase epitaxy,” Surf. Sci., 600, 2924-2927, 2006.

  1. Moravej, M., Yang, X., Penelon, J., Babayan, S. E., and Hicks, R. F., “A radio-frequency nonequilibrium atmospheric pressure plasma operating with argon and oxygen” J. Appl. Phys., 99, 093305-1-6, 2006.

  2. Woo, R. L., Cheng, S. F., Chen, G., Sun, Y., and Hicks, R. F., “Phosphine and Tertiarybutylphosphine Adsorption on the Indium-Rich InP (001)-(2x4) Surface,” Surf. Sci., 600, 4888-4895, 2006.

  3. Moravej, M., Yang, X., Barankin, M., Penelon, J., Babayan, S. E., and Hicks, R. F., “Properties of an atmospheric pressure radio-frequency argon and nitrogen plasma,” Plasma Sources Sci. Technol, 15, 204-210, 2006.

  4. Cheng, S. F., Woo, R. L., Noori, A. M., Malouf, G., Goorsky, M. S., and Hicks, R. F., “Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride, J. Crystal Growth 299, 277-281, 2007.

  5. Woo, R. L., Cheng, S. F., Malouf, G., Woo, R., Goorsky, M. S., and Hicks, R. F., “Red shift in photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride,” J. Appl. Phys., submitted February 28, 2007.

  6. Ladwig, A. M., Smith, M. D., Highland, W., Koch, R., Babayan, S. E., and Hicks, R. F., “Atmospheric Plasma Deposition of Glass Coatings on Aluminum,” Surface and Coatings Technol. 201, 6460-6464, 2007.

  7. Barankin, M. D., Gonzalez II, E., Ladwig, A. M., and Hicks, R. F., “Plasma-Enhanced Chemical Vapor Deposition of Zinc Oxide at Atmospheric Pressure and Low Temperature,” Solar En. Mater. & Solar Cells, 91 (10), 924-930, 2007.

 

© Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles.
For information, please contact Professor Robert F. Hicks
Last Modified May 21, 2007 05:58 PM