Pulication list

2017 2016 2015 2014 2013 2012 2011 2010 earlier publications

 

Year 2017

169. “Cardiac fibroblasts adopt osteogenic cell fates and contribute to pathologic heart calcification”, Indulekha C.L. Pillai, Shen Li, Milagros Romay, Larry Lam, Yan Lu, Jie Huang, Nathaniel Dillard, Marketa Zemanova, Liudmilla Rubbi, Yibin Wang, Jason Lee, Ming Xia, Owen Liang, Ya-Hong Xie, Matteo Pellegrini, Aldons J. Lusis, & Arjun Deb, Cell Stem Cell, v.20, 1-15 (2017).

 

Year 2016

168. “Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure”, Gang Niu, Giovanni Capellini, Fariba Hatami,Antonio Di Bartolomeo, Tore Niermann, Emad Hameed Hussein, Markus Andreas Schubert, Hans-Michael Krause, Peter Zaumseil, Oliver Skibitzki, Grzegorz Lupina, William Ted Masselink, Michael Lehmann, Ya-Hong Xie, and Thomas Schroeder, ACS Appl. Mater. Interfaces, v.8, 26948 (2016);
167. “Copper Ion Binding Site in -Amyloid Peptide”, Diana Yugay, Dominic P Goronzy, Lisa Margaret Kawakami, Shelley A. Claridge, TzeBin Song, Zhongbo Yan, Ya-Hong Xie, Jerome Gilles, Yang Yang, and Paul S. Weiss, Nano Letters, DOI: 10.1021/acs.nanolett.6b02590, September 12, (2016);
166. “SERS Optical Fiber Probe with Plasmonic End-facet”, Ming Xia, Pei Zhang, Claris Leung, and Ya-Hong Xie, Journal of Raman Spectroscopy, DOI 10.1002/jrs.5031, (2016);
165. “Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask”, Qingbin Ji, Lei Li, Wei Zhang, Jia Wang, Peichi Liu, Yahong Xie, Tongxing Yan, Wei Yang, Weihua Chen, and Xiaodong Hu, ACS Appl. Mater. Interfaces, DOI: 10.1021/acsami.6b07044;
164. “The Electro-Mechanical Responses of Suspended Graphene Ribbons for Electrostatic Discharge Applications”, Wei Zhang, Rui Ma, Qi Chen, Ming Xia, Jimmy Ng, Albert Wang, and Ya-Hong Xie, Appl. Phys. Lett., v.108, 153103 (2016);
163. “Systematic Characterization of Graphene ESD Interconnects for on-Chip ESD Protection”, Qi Chen, Rui Ma, Wei Zhang, Fei Lu, Chenkun Wang, Ya-Hong Xie, and Albert Wang, IEEE Trans. Electron Dev., v.63, 3205 (2016);
162. “Synthesis and investigation of novel ZnO-CuO core-shell nanospheres”, H. Li, L.Y. Zhu, M.L. Xia, N. Jin, K.F. Luo, and Y.H. Xie, Materials Letters, v.174, 99-101 (2016).
161. “Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns”, Gang Niu, Giovanni Capellini, Grzegorz Lupina, Tore Niermann, Marco Salvalaglio, Anna Marzegalli, Markus Andreas Schubert, Peter Zaumseil, Hans-Michael Krause, Oliver Skibitzki, Michael Lehmann, Francesco Montalenti, Ya-Hong Xie, Thomas Schroeder , ACS Appl. Mater. Interfaces, v.8, 2017 (2016);
160. .“Self-aligned trapping and detecting molecules using plasmonic tweezer with an integrated electrostatic cell”, Zhongbo Yan, Ming Xia, Pei Zhang and Ya-Hong Xie; under review with Advanced Optical Materials;
159.“Selective Manipulation of Single Molecules by Electrostatic Force in Aqueous Solution”, Zhongbo Yan, Ming Xia, Pu Wang, Pei Zhang, Owen Liang and Ya-Hong Xie, J. Phys Chem. C, DOI: 10.1021/acs.jpcc.6b04761 (2016); (ACS Editor’s Choice)
158. “A Dual-Polarity Graphene NEMS Switch ESD Protection Structure”, Rui Ma, Qi Chen, Wei Zhang, Fei Lu, Chenkun Wang, Albert Wang, Ya-Hong Xie, and He Tang, IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 5, 674 (2016);
157. “Dislocation-free Ge nano-crystals on Si: pattern independent selective Ge heteroepitaxy via Si-tip wafers”, Gang Niu, Giovanni Capellini, Markus Andreas Schubert, Tore Niermann,Peter Zaumseil, Jens Katzer, Hans-Michael Krause, Oliver Skibitzki, Michael Lehmann, Ya-Hong Xie, Hans von Känel, Thomas Schroeder, published online, Sci. Rep., v.6, DOI: 10.1038/srep22709.(2016);
156. “Coupling SPP with LSPR for Enhanced Field Confinement: A Simulation Study." M. Xia, P, Zhang, K. Qiao, Y. Bai, and Y.H. Xie, J. Phys. Chem. C, 120 (1), 527 (2016);
155. “Multiple Layered Metallic Nanostructures for Strong SERS Enhancement”, M. Xia, K. Qiao, Z.Y. Cheng, and Y.H. Xie, Applied Physics Express v.9, 065001 (2016).

 

Year 2015

154. “Enhancement of P diffusion density in bulk ZnO for p-type conductivity”, M. Asghar, K. Mahmood, A. Nawaz, B.M. Samaa, S. Rabia Ejaza, Y. H. Xie, Materials Today: Proceedings, v.2, 5230 (2015).
153. “Label-free SERS Selective Detection of Dopamine and Serotonin Using Graphene-Au Nanopyramid Heterostructure”, Pu Wang, Ming Xia, Owen Liang, Ke Sun, Aaron F. Cipriano, Thomas Schroeder, Huinan Liu and Ya-Hong Xie, Analytical Chemistry, v.87, 10255 (2015);
152. “Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition”, L. Zheng, X.H. Cheng, Y.H. Yu, Y.H. Xie, X.L. Li, and Z.J. Wang, Phys. Chem. Chem. Phys., v.17, 3179 (2015);
151. "Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures", Duo Cao, Xinhong Cheng, Yahong Xie, Li Zheng, Zhongjian Wang, Xinke Yu, Jia Wang, Dashen Shen, Yuehui Yu, RSC Advances, Royal v. 5(47), 37881 - 37886 (April 2015);
150. “Spectroscopic Signatures of AA’ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 “, Ming Xia, Bo Li, Kuibo Yin, Giovanni Capellini, Gang Niu, Yongji Gong, Wu Zhou, Pulickel M.Ajayan, Ya-Hong Xie, ACS Nano, v.9, 12246 (2015);
149. “Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy”, Marvin H. Zoellner, Marie-Ingrid Richard, Gilbert A. Chahine, Peter Zaumseil, Christian Reich, Giovanni Capellini, Francesco Montalenti, Anna Marzegalli, Ya-Hong Xie, Tobias U. Schülli, Maik Häberlen, Peter Storck, and Thomas Schroeder, ACS Applied Materials & Interfaces, v.7, 9031 (2015);
148. “Scalability of phase change materials in nano-structure template”, Wei Zhang, Biyun L. Jackson, Ke Sun, Jae Young Lee, Shyh-Jer Huang, Hsin-Chieh Yu, Sheng-Po Chang, Shoou-Jinn Chang, and Ya-Hong Xie, International Journal of Photoenergy, 2015(253296):1 - 4 (2015);
 

Year 2014

147. “On the kinetic barriers of graphene homo-epitaxy”, Wei Zhang, Xinke Yu, Erica Cahyadi, Ya-Hong Xie, and Christian Ratsch, Applied Physics Letters v.105, 221607 (2014);
146. “Properties of HfO2/La2O3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition”, Duo Cao, Xinhong Cheng, Yahong Xie, Xiaolong Li, Zhongjian Wang, Chao Xia, Li Zheng, Dawei Xu, Lingyan Shen, and Yuehui Yu, RSC Advances, v. 4(69), 36828 - 36833 (August 2014);
145. “Stimulated Emission in GaN-based Laser Diodes Far Below the Threshold Region”, Ding Li, Hua Zong, Liefeng Feng, Wei Yang, Juan He, Weimin Du, Cunda Wang, Ya-Hong Xie, Zhijian Yang, Guoyi Zhang and Xiaodong Hu, Opt. Exp., v.22, 2536 (2014).

 

Year 2013

144. “Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection”, Pu Wang , Owen Liang , Wei Zhang , Thomas Schroeder , and Ya-Hong Xie, Adv. Mat. v.25, 4918 (2013).
143. “Response of VO-Zni intrinsic donor of ZnO under hot oxygen and zinc environments”, M Asghar, K Mahmood, Y.H. Xie, I.T Ferguson, M. Y. A Raja and R. Tsu, Semicond. Sci. Techn., v.28, 105019 (2013);
142. “Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN”, Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh-Jer Huang, Hsiao-Chiu Hsu, Yan-Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, XiaoDong Hu, and Y. H. Xie, J. Appl. Phys, v.113, 144908 (2013)
141. “Influence of the buffer layer properties on the intensity of Raman scattering of graphene”, S. A. Dyakov, T. S. Perova, M. Congqin, Y.-H. Xie, S. A. Cherevkov, and A.V. Baranov, J. Raman Spectroscopy, v.44, 803 (2013); 

 

Year 2012

140. “Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance”, Yanjie Wang, Bo-Chao Huang, Ming Zhang, Congqin Miao, Ya-Hong Xie, and Jason C. S. Woo, ISRN Electronics, v.2012, Article ID 891480 (2012);
139. “Stoichiometry–structure correlation of epitaxial Ce 1-xPrxO 2-d (x=0-1) thin films on Si (111)”, Marvin Hartwig Zoellner, Peter Zaumseil, Henrik Wilkens, Sebastian Gevers, Joachim Wollschlager, Marcus Baumer, Ya-Hong Xie, Gang Niu, Thomas Schroeder, Journal of Crystal Growth, v.355, 159 (2012);
138. “Giant Optical Response from Graphene Plasmonic System”, Pu Wang, Wei Zhang, Owen Liang, Marcos Pantoja, Jens Katzer, Thomas Schroeder, and Ya-Hong Xie, ACS Nano, v.6(7), 6244 (2012);
137. “Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels”, Lei Li, Justin P. C. Liu, Lei Liu, Ding Li, Lei Wang, Chenghao Wan, Weihua Chen, Zhijian Yang, Yahong Xie, Xiaodong Hu, and Guoyi Zhang, Appl. Phys. Express v.5, 051001 (2012);
136. “Vertical Graphene Base Transistor”, Wolfgang Mehr, Jarek Dabrowski, J. Christoph Scheytt, Gunther Lippert, Ya-Hong Xie, Max C. Lemme, Mikael Ostling, and Grzegorz Lupina, Electron Device Letters, v.33, 691 (2012);
135. “Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si”, Ke Sun, Wei Zhang, Biyun Li, Jae Young Lee, Ya-Hong Xie, J. Katzer, T. Schroeder, Xinyu Wei, and Thomas P. Russell, IEEE Trans. Nanotechn. (TNano) v.11, 999 (2012);
 

Year 2011

134. “Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well”, T.M. Lu, W. Pan, D.C. Tsui, P.C. Liu, Z. Zhang, and Y.H. Xie, Phys. Rev. Lett. v.107, 126403 (2011);
133. “The effect of surface conductance on lateral gated quantum devices in Si/SiGe heterostructures”, Xi Lin, Jingshi Hu, Andrew P. Lai, Zhenning Zhang, Kenneth MacLean, Colin Dillard, Ya-Hong Xie, and Marc A. Kastner, J. Appl. Phys., v.110, 023712 (2011);
132. “Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling Junction”, Ahmet Tura, Zhenning Zhang, Peichi Liu, Ya-Hong Xie, and Jason C. S. Woo, IEEE Trans. Electron Dev., v.58 (7), 1907 (2011);
131. “Defects and stress relaxation in Ge islands on patterned Si (001) evidenced by diffuse x-ray scattering and Transmission Electron Microscopy”, M.I. Richard, A. Malachias, J.-L. Rouvière, T.-S. Yoon, E. Holmström, Y.-H.Xie, V. Favre-Nicolin, V. Holý, K. Nordlund, G. Renaud, and T.-H. Metzger, Phys.Rev. B. 84, 075314 (2011);
130. “Study of Ni metallization in macro porous Si using wet chemistry for RF cross-talk isolation in mixed signal IC’s”, Xi Zhang, Chengkun Xu, Kyuchul Chong, King-ning Tu, Ya-Hong Xie, Materials v.4(6), 952 (2011);
129. “A Method to fabricate a template with long range ordered dense array of true nanometer scaled pits”, Jae Young Lee, Ke Sun, Biyun Li, Ya-Hong Xie, Xinyu Wei, Thomas P. Russell, IEEE Trans. Nanotechn. (TNano), v.10, 256 (2011);

 

Year 2010

128. “Scalable Synthesis of Graphene on Patterned Ni and Transfer”, Yanjie Wang, Congqin Miao, Bo-chao Huang, Jing Zhu, Wei Liu, Youngju Park, Ya-hong Xie, and Jason C. S. Woo, IEEE Trans. Electron. Dev., v.57(12), 3472 (2010). 
127. “Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays”, Ke Sun, Jae Young Lee, Biyun Li, Wei Liu, Congqin Miao, Ya-Hong Xie, Xinyu Wei, and Thomas P. Russell, J. Appl. Phys. 108, 036102 (2010);
126. "(Invited) Graphene FETs: Promises and Challenges", Congqin Miao, Young Ju Park, Wei Liu, Yanjie Wang, Jing Zhu, BoChao Huang, Jason S.C. Woo, and Ya-Hong Xie, Electrochemical Society Transactions, v.33, 953 (2010).
125. “Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate”, J.Y. Lee, Ke Sun, Biyun Li, Ya-Hong Xie, Xinyu Wei, and Thomas P. Russell, Applied Physics Letters, v.97, 092114 (2010).
124. “Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors”, Wei Liu, Biyun Li Jackson, Jing Zhu, Cong-Qin Miao, Choon-Heui, Chung, Young -Ju Park, Ke Sun, Jason Woo, and Ya-Hong Xie, ACS Nano, v.4, 3927 (2010).
123. “Moiré Superstructures of Graphene on Facetted Nickel Islands”, Y. Murata, V. Petrova, B. B. Kappes, A. Ebnonnasir, I. Petrov, Y.H. Xie, C. V. Ciobanu, and S. Kodambaka, ACS Nano. v.4(11), 6509 (2010);
122. “Controlling dislocation positions in Silicon Germanium (SiGe) buffer layers by local oxidation” Q.L. Hu, I. Seo, Z.N. Zhang, S.H. Lee, H.M. Kim, S.H. Kim, Y.S. Kim, H.H. Lee, Y.H. Xie, K.B. Kim, and T.S. Yoon, Thin Solid Films v.518 S217 (2010);
121. “Na-doped p-type ZnO microwires”, W. Liu, F.X. Xiu, K. Sun, Y.H. Xie, K.L. Wang,Y. Wang, J. Zou, Z. Yang, and J.L. Liu, Journal of American Chemical Society, v.132, 2498 (2010);
120. “Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films”, W. Liu, C.H. Chung, C.Q. Miao, Y.J. Wang, B.Y. Li, L.Y. Ruan, K. Patel, Y.J. Park, J. Woo and Y.H. Xie, Thin Solid Films, v.518, S128 (2010);

 

Year 2009

119. “Graphene and Terahertz Science” P.Y. Han, W. Liu, Y.H. Xie, and X.C. Zhang, Physics (Chinese), v. 38, 395 (2009);
118. “Study of growth behavior and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates”, Tae-Sik Yoon, Hyun-Mi Kim, Ki-Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, and Ya-Hong Xie, Phys. Status Solidi B246(4), 721 (2009);
117. “Alternate State variables for emerging nanoelectronic devices”, K. Galatsis, A. Khitun, R. Ostroumov, K.L. Wang, W.R. Dichtel, E.Plummer, J. F. Stoddart, J.I. Zink, J.Y. Lee, Y.H. Xie, and K.W. Kim, IEEE Trans. Nanotech., v.8, 66 (2009);

 

Year 2008

116. “In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20mK”, T.M. Lu,L. Sun, D.C. Tsui, S. Lyon, W. Pan, M. Muhlberger, F. Schaffler, J. Liu and Y.H. Xie, Phys. Rev. B 78, 233309 (2008);
115. “Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates”, Jeehwan Kim, Jae Young Lee, Ya-Hong Xie, Thin Solid Films, v.516, 7599 (2008);
114. “The proximity effect of the regrowth interface on two-dimensional electron density in strained Si”, J. Liu, T. M. Lu, J. Kim, K. Lai, D. C. Tsui, and Y. H. Xie 
Appl. Phys. Lett. 92, 112113 (2008);
113. “Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes”, J. Liu, J.H. Kim, Y. H. Xie, T. M. Lu, and K. Lai, Thin Solid Films, v.517, 45 (2008);

 

Year 2007

112. “A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates”, Jeehwan Kim, Biyun Li, and Ya-Hong Xie, Appl. Phys. Lett. 91, 252108 (2007);
111. “Microstructure Analysis of Epitaxially Grown Self-Assembled Ge Islands on Nanometer-Scale Patterned SiO2/Si Substrates by High-Resolution Transmission Electron Microscopy”, T.S. Yoon, H.M. Kim, K.B. Kim, D.Y. Ryu, T.P. Russell, Z.M. Zhao, J. Liu, and Y.H. Xie, J. Appl. Phys. v.102, 104306 (2007);
110. “Capacitively induced high mobility two-dimensional electron gas in undoped Si/SiGe heterostructures with atomic-layer-deposited dielectric”, T.M. Lu, J. Liu, J. Kim, K. Lai, D.C. Tsui, and Y. H. Xie, Appl. Phys. Lett., 90, 182114 (2007);.
109. “Nickel displacement deposition of porous silicon with ultrahigh aspect ratio”, C.K. Xu, Xi Zhang, K.N. Tu, Y.H. Xie, Journal of the Electrochemical Society, 154 (3), D170-D174 (2007).
108. “Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio”, C.K. Xu, M.H. Li, Xi Zhang, K.N. Tu, Y.H. Xie, Electrochimica Acta, 52 (12), 3901-3909, 2007.
107. “Monolithic integrated modulator on silicon for optical interconnects”, B. Shi, P. S. Chang, K. Sun, Y.H. Xie, C. Radhakrishnan, and H.G. Monbouquette, IEEE Photon. Techn. Lett., v.19, 55 (2007);

 

Year 2006

106. “The fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates”, J.H. Kim and Y.H. Xie, Appl. Phys. Lett., v.89, 152117 (2006).
105. “Selective growth of Ge islands on nanometer-scale patterned SiO2/Si substrate by molecular beam epitaxy”, T.S. Yoon, Z.M. Zhao, J. Liu, Y.H. Xie, D.Y. Ryu, T.P. Russell, H.M. Kim and K.B. Kim, Appl. Phys. Lett., v.89, 063107 (2006).
104. “Emerging memory devices - nontraditional possibilities based on nanomaterials and nanostructures”, K. Galatsis, K.L.Wang, Y. Botros, Y. Yang, Y.H. Xie, J.F. Stoddart, R.B. Kaner, C. Ozhan, J.L. Liu, M. Ozkan, C.W. Zhou, and K.W. Kim, IEEE Cir. Dev. Mag., v.22[3], 12-21 (2006).
103. “Valley splitting of Si/Si1-xGex heterostructures in tilted magnetic fields”, K. Lai, T.M. Lu, W. Pan, D.C. Tsui, S. Lyon, J. Liu, Y.H. Xie, M. M¨uhlberger, and F. Schaffler, Phys. Rev. B, v.73, 161301(R) (2006);
102. “Single-step fabrication of nickel films with arrayed macropores and nanostructured skeletons”, X. Zhang, K.N. Tu, Y.H. Xie, C.H. Tung, and S.Y. Xu, Adv. Mat., v.18, 1905 (2006).
101. “High aspect ratio nickel structures fabricated by electrochemical replication of hydrofluoric acid etched silicon”, X. Zhang, K.N. Tu, Y.H. Xie, and C.H. Tung, Electrochem. Solid State Lett., v.9(9), C150 (2006).
100. “Ge self-assembled quantum dots on nano-scale patterned Si substrate”, T.S. Yoon, Z.M. Zhao, W. Feng, B.Y. Li, J.H. Kim and Y.H. Xie, J. Crystal Growth, v.290, 369 (2006);
99. “The Challenges in Guided Self-assmbly of Ge and InAs Quantum Dots on Si”, Z.M. Zhao, T.S. Yoon, W. Feng, B.Y. Li, J.H. Kim, J. Liu, O. Hulko, Y.H. Xie, H.M. Kim, K.B. Kim, H.J. Kim, K.L. Wang, C. Ratsch, R. Caflisch, D.Y. Ryu, and T. P. Russell, Thin Solid Film vol.508, 195 (2006);

 

Year 2005

98. “Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for Mixed-signal System-on-chip,” K.C. Chong, X. Zhang, K.N. Tu, D.Q. Huang, M.C.F. Chang and Y.H. Xie, IEEE Trans Electron Device, vol.52(11), 2440 (2005).
97. “Low capacitance and high isolation bond pad for high frequency RFIC’s “, K.C. Chong and Y.H. Xie, IEEE Electron Device Lett., vol.26[10], 746 (2005).
96. “High performance on-chip transformers”, K.C. Chong and Y.H. Xie, IEEE Electron Device Lett., 26 [8], pp.557-559, 2005.
95. “Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers”, T.S. Yoon, J. Liu, A. Noori, M.S. Goorsky, and Y.H. Xie, Appl. Phys. Lett., vol. 87, 012104 (2005);
94. “Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)”, Z.M. Zhao, O. Hul’ko, H.J. Kim, J. Liu, B. Shi, and Y.H. Xie, Thin Solid Films, vol. 483, 158 (2005);
93. “High-performance inductors integrated on porous silicon”, K.C. Chong, Y.H. Xie, K.W. Yu, D.Q. Huang, and M.C.F. Chang, IEEE Electron Dev. Lett., vol. 26, 93 (2005);

 

Before Year 2005

92. “Fabrication and characterization of low temperature (<450 degrees C) grown p-Ge/n-Si photo-detectors for silicon based photonics”, P.R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H.J. Kim and Y.H. Xie, Materials Science & Engineering B, vol.B113, no.1, pp.79-84, Oct. 2004.
91. “Growth and characterization of InAs quantum dots on Si (001) substrates”, Z. M. Zhao, O. Hulko, H. J. Kim, J. Liu, T. Sugahari, B. Shi and Y. H. Xie, J. Cryst. Growth, vol.271, 450 (2004);
90. “Ge film grown on Si substrates by molecular beam epitaxy below 450 C”, J. Liu, H.J. Kim, O. Hul’ko, Y.H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys., v.96, 916 (2004).
89. “On the formation mechanism of epitaxial Ge islands on partially relaxed SiGe buffer layers”, H.J. Kim, J. Liu, Z.M. Zhao and Y.H. Xie, J. Vac. Sci. Technol. B22(4), 2257 (2004);
88. “Experimental investigation of Hall Mobility in Ge/Si quantum dot superlattices”, Y. Bao, A.A. Balandin, J.L. Liu, J. Liu, and Y.H. Xie, Appl. Phys. Lett., vol.84, 3355 (2004);
87. “The fractional quantum Hall effect at n=2/3 and 4/3 in strained Si quantum wells,” K. Lai, W. Pan, D.C. Tsui, and Y. H. Xie, Phys. Rev. B69, 125337 (2004);
86. “A novel technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si (001)”, H.J. Kim, Z.M. Zhao, J. Liu, V. Ozolins, J.Y. Chang and Y.H. Xie, J. Appl. Phys., vol.95, 6065 (2004);
85. “Observation of the apparent metal-insulator transition of high-mobility two-dimensional electron system in a Si/SiGe heterostructure”, K. Lai, W. Pan, D.C. Tsui, and Y.H. Xie, Appl. Phys. Lett., vol.84(2), 302 (2004).
84. “Three-stage Nucleation and Growth of Ge Self-Assembled Quantum Dots Grown on Partially Relaxed SiGe Buffer Layers,” H.J. Kim, Z.M. Zhao, and Y.H. Xie, Phys. Rev. B., vol.68, 205312 (2003);
83. “The importance of distributed grounding in combination with porous Si trenches for the reduction of RF crosstalk through p- Si substrate,” H.S. Kim, K.C. Chong, Y.H. Xie, and K.A. Jenkins, IEEE Electron Dev. Lett., vol.24(8), 640 (2003);
82. “Influence of coupling effect in the operation of vertically coupled quantum dot lasers”, Bin Shi and Y.H. Xie, Appl. Phys. Lett. vol.82, 4788 (2003)
81. “Study of the cross-sectional profile in selective formation of porous silicon,” H.S. Kim, K.C. Chong, and Y.H. Xie, Appl. Phys. Lett., vol.83(13), 2710 (2003);
80. “The promising Role of Porous Si in Mixed-signal Integrated Circuit Technology,” H.S. Kim, K.C. Chong, and Y.H. Xie, Phys. Stat. Solidi, (a) vol.197, 269 (2003);
79. “Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications”, H.S. Kim, Y.H. Xie, M. DeVincentis, T. Itoh, and K.A. Jenkins, J. Appl. Phys., Vol.93, 4226 (2003).
78. “Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001),” H.J. Kim, J.Y. Chang, and Y.H. Xie, J. Cryst. Growth, Vol. 247, 251 (2003);
77. “Effective crosstalk isolation through p+ Si substrates with semi-insulating porous Si,” H.S. Kim, K.A, Jenkins, and Y.H. Xie, Electron Dev. Lett. Vol.23(3), 160 (2002);
76. “Effective method for stress reduction in thick porous silicon films,” H.S. Kim, E.C. Zouzounis, and Y.H. Xie, Appl. Phys. Lett., Vol. 80(13), 2287 (2002);
75. “High room-temperature hole mobility in GeSi/Ge/GeSi modulation-doped heterostructures,” S. Madhavi, V. Venkataraman, and Y.H. Xie, J. App. Phys., Vol.89, 2497 (2001).
74. “Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001),” H.J. Kim and Y.H. Xie, Appl. Phys. Lett. Vol.79, 263 (2001).
73. "Spiral inductors on Si p/p+ substrates with resonant frequency of 20 GHz," Han-Su Kim, Dawei Zheng, A.J. Becker, and Ya-Hong Xie, IEEE Electron Dev. Lett., 22, no.6, 275 (2001);
72. "Use of Transient Enhanced Diffusion to Tailor Boron Out-diffusion," H.H. Vuong, Y.H. Xie, M.R. Frei, G. Hobler, L. Pelaz and C.S. Rafferty, IEEE Trans. Electron Dev., Vol. 47, 1401 (2000);
71. "Low and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells", S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, Phys. Rev. B, Vol.61, 16807, (2000);
70. “Phase diagram of the integer quantum Hall effect in p-type germanium”, M. Hilke, D. Shahar, S.H. Song, D.C. Tsui, and Y.H. Xie, Phys. Rev. B., Vol.62, 6940 (2000);
69. “SiGe Field Effect Transistors”, Y.H.Xie, Mat. Sci. & Eng., R25, 89 (1999).
68. “Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si”, L.P. Rokhinson, D.C. Tsui, J.L.Benton, and Y.H.Xie, Appl. Phys. Lett. 75, 2413 (1999).
67. “The Quantized Hall Insulator”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, M.Shayegan, and Y.H.Xie, Annalen der Physik, 8, 603 (1999).
66. “ Experimental Evidence for a two-dimensional quantized Hall insulator”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Nature, 395, 675 (1998).
65. “An Approach For Fabricating High Performance Inductors On Low Resistivity Substate”, Y.H. Xie, M.R. Frei, A.J. Becker, C.A. King, D. Kossives, L.T. Gomez, and S.K. Theiss, IEEE Journ. Solid State Circuits, 33, 1433 (1998);
64. “Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si”, G.P.Watson, J.L.Benton, Y.H.Xie, and E.A.Fitzgerald, Appl. Phys. Lett., 83, 3773 (1998);
63. “Symmetry in the insulator - quantum Hall - insulator transitions observed in a Ge/SiGe quantum well”, M. Hilke, D.Shahar, S.H.Song, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. B; 56, 15545 (1997);
62. “Relaxed Template for Fabricating Regularly Distributed Quantum Dot Arrays”, Y.H.Xie, S.B.Samavedam, M. Bulsara, T.A.Langdo, and E.A.Fitzgerald, Appl. Phys. Lett., 71, 3567 (1997);
61. “Energy relaxation of two-dimensional carriers in strained Ge/SiGe and Si/SiGe quantum wells: evidence for two-dimensional acoustic phonons”, S.H.Song, W.Pan, D.C.Tsui, Y.H.Xie, and Don Monroe, Appl. Phys. Lett., 70, 3422 (1997);
60. “Influence of strain on semiconductor thin film epitaxy”, E.A.Fitzgerald, S.B.Samavedam, Y.H.Xie, and L.M.Giovane, J. Vac. Sci. Technol. A, 15(3), 1048 (1997);
59. “New Universality at the Magnetic Field Driven Insulator to Integer Quuantum Hall Effect Transitions”, S.H.Song, D.Shahar, D.C.Tsui, Y.H.Xie, and Don Monroe, Phys. Rev. Lett., 78, 2200 (1997);
58. "Strain field imaging on Si/SiGe(001)-(2x1) surfaces by low energy electron microscopy and scanning tunneling microscopy", D.E.Jones, J.P.Pelz, Y.Hong, I.S.T.Tsong, Y.H.Xie, and P.J.Silverman, Appl. Phys. Lett., 69, 3245, (1996).
57. "Study of electrically active defects in relaxed GeSi films using a near field scanning optical microscope", J.W.P.Hsu, E.A.Fitzgerald, Y.H.Xie, and P.J.Silverman, J. Appl. Phys., 79, 7743, (1996).
56. "Steady-state and time-resolved spectroscopy of silicon nanostructures", S.V.Gaponenko, E.P.Petrov, U.Woggon, O.Wind, C.Klingshirn, Y.H.Xie, I.N.Germanenko, and A.P.Stupak, J. Lumin., 70, 364 (1996);
55. "Influence of Ga vs. As prelayers on GaAs/Ge Growth Morphology", Q.Xu, J.W.P.Hsu, E.A.Fitzgerald, J.M.Kuo, Y.H.Xie, and P.J.Silverman, J. Electron, Mat. 25(6), 1009 (1996).
54. "Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces", Surf. Sci., 341, L1005, (1995).
53. "The Role of Strain in Silicon-Based Molecular Beam Epitaxy", Y.H.Xie and P.J.Silverman, J. Crystal Growth, 157, 113, (1995).
52. "Enhanced Step Waviness on SiGe (001)-(2x1) Surfaces Under Tensile Strain", D.E.Jones, J.P.Pelz, Y.H.Xie, P.J.Silverman, and G.H.Gilmer, Phys. Rev. Lett., 75 , 1570, (1995).
51. "Step Energies and Surface Roughening Under Bulk Strain", Y.H.Xie, G.H.Gilmer, C.Roland, P.J.Silverman, S.K.Buratto, J.Y.Cheng, E.A.Fitzgerald, A.R.Kortan, S.Schuppler, M.A.Marcus, and P.H.Citrin, Phys. Rev. Lett., 74, 4963, (1995).
50. "Fabrication and Application of Relaxed Buffer Layers", Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, Mats. Sci. Engr., B30 , 201 (1995).
49. "Photodegradation of the luminescence of porous silicon during pulsed excitation", Y.H.Xie, I.N.Germanenko, V.F.Voronin, and S.V.Gaponenko, Semiconductors, 29, 350, (1995).
48. "Antidot Superlattices in Two-dimensional Hole Gases Confined in Strained Germanium Layers", D.Tobben, M.Holzmann, G.Abstreiter, A.Kriele, H.Lorenz, J.P.Kotthaus, F.Schaffler, Y.H.Xie, P.J.Silverman, and Don Monroe, Semicond. Sci. Techn., 10, 1413, (1995).
47. "Electron trapping kinetics at dislocations in relaxed Ge 0.3Si 0.7/Si heterostructures", E.A. Fitzgerald, G.P. Watson, Y.H. Xie, P.N. Grillot, S.A. Ringel, J. Appl. Phys., 77, 3248 (1995).
46. "Size, Shape, and Composition of Luminescent Species in Oxidized Si Nanoclusters and H-Passivated Porous Si", S.Schuppler, S.L.Friedman, M.A. Marcus, D.L.Adler, Y.H.Xie, F.M.Ross, Y.J.Chabal, T.D.Harris, L.E.Brus, W.L.Brown, E.E.Chaban, P.J.Szajowski, S.B.Christman and P.H.Citrin, Phys. Rev. B, 52(7) , 4910 (1995).
45. "Polarization of porous silicon luminescence", S.V.Gaponenko, V.K.Kononenko, E.P.Petrov, I.N.Germanenko, A.P.Stupak, and Y.H.Xie, Appl. Phys. Lett., 67, 3019, (1995).
44. "Minority and Majority Carrier Trapping in Strain Relaxed Ge0.3 Si0.7/Si Heterostructures Diodes Grown by Rapid Thermal Chemical-Vapor Deposition", P.N.Grillot, S.A.Ringel, E.A. Fitzgerald, G.P. Watson, and Y.H. Xie, J. Appl. Phys. Lett., 77, 676 (1995).
43. "Dimension of Luminescent Oxidized and Porous Silicon Structures", S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.H. Xie, S.M. Ross, T.D. Harris, W.L. Brown, Y.J. Chabal, L.E. Brus, P.H. Citrin, Phys. Rev. Lett., 72(16), 2648 (1994);
42. "Implication of Silicon Nanocrystallites from Combined Absorption and Luminescence Studies of Free-Standing Porous Silicon Films", Y.H. Xie, M.S. Hybertson, W.L. Wilson, Japan. J. Appl. Phys., 34, Suppl. 34-1, 257 (1994).
41. "Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain", Y.H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler, M.A. Marcus, P.H. Citrin, Phys. Rev. Lett., 73, 3006 (1994);
40. "Near-Field Scanning Optical Microscopy Imaging of Individual Threading Dislocations on Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman, Appl. Phys. Lett., 65(3), 344 (1994);
39. "Absorption and Luminescence Studies of Free-standing Porous Silicon Films," Y.H. Xie, M.S. Hybertsen, W.L. Wilson, S.A. Ipri, G.E. Carver, W.L. Brown, E. Dons, B.E. Weir, A.R. Kortan, G.P. Watson, and A.J. Liddle, Phys. Rev. B, 49(8), 5386 (1994);
38. "From Relaxed GeSi Buffers to FETs: Current Status and Future Prospects", Y.H. Xie, E.A. Fitzgerald, D.P. Monroe, G.P. Watson, P.J. Silverman, Japanese Journal of Appl. Phys., part I, 33, 2372 (1994).
37. "Light Emission From Silicon", S.S.Iyer and Y.H.Xie, Chapter 4 of the book "Porous Silicon", Z.C.Feng and R.Tsu, Ed., World Scientific Pub., New Jersey, 1994.
36. “Relaxed, low threading defect density Si0.7 Ge0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition”, G.P.Watson, E.A.Fitzgerald, Y.H.Xie, D.P.Monroe, J. Appl. Phys., 75(1), 263 (1994).
35. “Light Emission From Silicon”, S.S. Iyer, Y.-H. Xie, Science, 260, 40 (1993).
34. "Gas/Source Molecular Beam Epitaxy of InGaP and GaAs on Strain-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.H. Xie, P.J. Silverman; J. Vac. Sci. Technol. B, 11(3), 857 (1993);
33. "Very High Mobility Two-Dimensional Hole Gas in Si/GexSi1-x/Ge Structures Grown by Molecular Beam Epitaxy," Y.-H. Xie, D.P. Monroe, E.A. Fitzgerald, P.J. Silverman, F.A. Thiel, G.P. Watson, Appl. Phys. Lett., 63(16), 2263 (1993);
32. "The Necessity of Ga Pre-Layers in GaAs/Ge Growth Using Gas-Source Molecular Beam Epitaxy," E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, P.J. Silverman, Appl. Phys. Lett., (1993);
31. "Comparison of Mobility-limiting Mechanisms in High-mobility Si1-x Gex heterostructures," D. Monroe, Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, and G.P. Watson, J. Vac. Sci. Technol. B, 11(4), 1731 (1993);
30. "Unimportance of Siloxane in Luminescense of Porous Silicon," S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, T.D. Harris, P. Citrin, Appl. Phys. Lett., 62(16), 1934 (1993);
29. "Fabrication of High Mobility Two-Dimensional Electron and Hole Gases," Y.-H. Xie, E.A. Fitzgerald, D.P. Monroe, P.J. Silverman, G.P.Watson, J. Appl. Phys., 73(12), 8364 (1993);
28. "Controlled Misfit Dislocation Nucleation in Si0.90 Ge0.10 Epitaxial Layers Grown on Si," G.P. Watson, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, A.E. White, K.T. Short, Appl. Phys. Lett., 63(6), 746 (1993);
27. "Process and Defect Induced Surface Morphology of Relaxed SiGe Films," J.W.P. Hsu, M. Cardillo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, Scan. Probe Microscopies II, 118 (1993);
26. "Gas Source Molecular Beam Epitaxy of InGaP and GaAs on Strained-Relaxed GexSi1-x /Si," J.M. Kuo, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Vac. Sci. Technol. B, 11(3), 857 (1993);
25. “Characterization of Compositionally Graded Si1-x Gex Alloy Layers by Photoluminescence Spectroscopy and by Cathodoluminescence Spectroscopy and Imaging”, V. Higgs, E.C. Lightowlers, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, J. Appl. Phys., 73, 1952 (1993).
24. "Quantized Hall Effects in High Electron Mobility Si/Ge Structures", D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J. Silverman, Phys. Rev., B46, 7935 (1992).
23. "Photoluminescence Investigations of Graded, Totally Relaxed Gex Si 1-x Structures," J.Michel, E.A.Fitzgerald, Y.H.Xie, P.J.Silverman, M.Morse and L.C.Kimerling, J. Electron. Mat., 21, 1099 (1992).
22. “Relaxed GeSi structures for III-V integration with Si and high mobility two-dimensional electron gases in Si”, E.A. Fitzgerald, Y.H. Xie, D. Monroe, P.J. Silverman, J.M. Kuo, A.R. Kortan, F.A. Thiel, and B.E. Weir, J. Vac. Sci. Technol. B, vol.10(4), 1807 (1992);
21. "Fabrication of Relaxed GeSi Buffer Layers on Si (100) With Low Threading Dislocation Density," Y.H.Xie, E.A.Fitzgerald, P.J.Silverman, A.R.Kortan and B.E.Weir, Mat. Sci. & Eng., B14, 332 (1992).
20. "Surface Morphology of Relaxed Gex Si1-x Films", J.W.P. Hsu, E.A. Fitzgerald, Y.-H. Xie, P.J. Silverman, M.J. Cardillo, Appl. Phys. Lett., 61, 1293 (1992).
19. "Luminescence and Structural Study of Porous Silicon Films", Y.H. Xie, W. L. Wilson, F. M. Ross, J. A. Mucha, E. A. Fitzgerald, J. M. Macaulay, T. D. Harris, J. Appl. Phys., 71, 2403 (1992).
18. "Extremely High Electron Mobility in Si/Gex Si1-x Structures Grown by Molecular Beam Epitaxy", Y.J. Mii, Y.-H. Xie, E. A. Fitzgerald, D. Monroe, F. A. Thiel, B. E. Weir, and L. C. Feldman, Appl. Phys. Lett., 59, 1611 (1991).
17. "Evaluation of Erbium Doped Silicon for Optoelectronic Applications", Y.-H. Xie, E.A. Fitzgerald, and Y.-J. Mii, J. Appl. Phys., 70, 3223 (1991).
16. "The Electrical and Defect Properties of Erbium-Implanted Silicon", J.L. Benton, J. Michel, L.C. Kimerling, D.C. Jacobson, Y.-H. Xie, D.J. Eaglesham, E.A. Fitzgerald, and J.M. Poate, J. Appl. Phys., 70, 2667 (1991).
15. "Strain Relaxation in Ge.09 Si .91 Epitaxial Thin Films Measured by Wafer Curvature", C.A. Volkert, E.A. Fitzgerald, R. Hull, Y.-H. Xie, and Y.-J. Mii, J. Electron. Mats., 20, 833 (1991).
14. "Totally Relaxed Gex Si11-x Layers with Low Threading Dislocation Densities Grown on Si Substrates", E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, and B.E. Weir, Appl. Phys. Lett., 59, 811 (1991).
13. "The Microstructure of Erbium-Implanted Si", D. J. Eaglesham, J. Michel, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, J.L. Benton, A. Polman, Y.-H. Xie, L.C. Kimerling, Appl. Phys. Lett., 58, 2797 (1991).
12. "Epitaxially Stabilized Gex Sn1-x Diamond Cubic Alloys", E.A. Fitzgerald, P.E. Freeland, M. T. Asom, W. Lowe, R. MacHarrie, B. E. Weir, A. R. Kortan, F.A. Thiel, Y.-H. Xie, A. M. Sergent, S. L. Cooper, G. A. Thomas, and L.C. Kimerling, J. Elec. Mats., 20, 489 (1991).
11. "Impurity Enhancement of the 1.54 mm Er 3+ Luminescene in Silicon," J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J.M. Poate, and L. C. Kimerling, J. Appl. Phys., 70, 2672 (1991).
10. "Selective Epitaxial Growth in Deep Trenches for Integrated Photodetector Applications," Y. H. Xie, R. P. Jindal, J. L. Benton, C. L. Paulnack, P. H. Langer and A. J. Miller, J. Electrochem. Soc., 137, 3559 (1990).
9. "A Re-evaluation of Hetero-Epitaxy of Continuous Films on Patterned Substrates," Y. H. Xie, Thin Solid Films, 188, L1 (1990).
8. "From Porous Si to Patterned Si strates: Can Misfit Strain Energy in a Continuous Heteroepitaxial Film be Reduced?" Y. H. Xie and J. C. Bean, J. Vac. Sci. Technol., B8, 227, (1990).
7. "Heteroepitaxy of Gex Si1-x on Porous Si Substrates," Y. H. Xie and J. C. Bean, J. Appl. Phys., 67(2), 792 (1990).
6. "Hydrogenation of Molecular Beam Epitaxial Ge0.36 Si0.64 on Si," Y. H. Xie, H. S. Luftman, J. Lopata and J. C. Bean, Appl. Phys. Lett., 55(7), 684 (1989).
5. "Summary Abstract: Evidence for a Piezoelectric Effect in Coherently Strained Ge0.2 Si0.8 Alloys on Si(001)," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, J. Vac. Sci. Technol., B5, 744 (1987).
4. "Power Loss by Two-Dimensional Holes in Coherently Strained Ge0.2 Si0.8 /Si Heterostructures: Evidence for Weak Screening," Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, Appl. Phys. Lett., 49(5), 283 (1986).
3. "Deep-Level Defect Study of Molecular Beam Epitaxially Grown Silicon Films," Y. H. Xie, Y.Y. Wu and K. L. Wang, Appl. Phys. Lett., Jan. 27, (1986).
2. "Uniformity and Crystalline Quality of CoSi2 /Si Heterostructures Grown by Molecular Beam Epitaxy and Reactive Deposition Epitaxy," Y. C. Kao, M. Tejwani, Y. H. Xie, T. L. Lin and K. L. Wang, J. Vac. Sci. Technol., B3(2), 596 (1985).
1. "An Investigation on Surface Conditions for Si Molecular Beam Epitaxy (MBE) Growth," Y. H. Xie, K. L. Wang and Y. C. Kao, J. Vac. Sci. Technol., A3(3), 1035 (1985).