Publications & Patents
Publications | Patents & Disclosures
Publications
Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator
Wook-Jae Lee, Hyunseok Kim, Jong-Bum You, and Diana L. Huffaker
Scientific Reports, 7, 9543 (2017)
Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator
Hyunseok Kim, Wook-Jae Lee, Alan C. Farrell, Akshay Balgarkashi, and Diana L. Huffaker
Nano Letters, DOI: 10.1021/acs.nanolett.7b01360 (2017)
Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors
Farrell, A. C., Senanayake, P., Meng, X., Hsieh, N. Y., and Huffaker, D. L
Nano Letters, 17(4), 2420-2425 (2017)
Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates
D. Ren, A. C. Farrell, B. S. Williams, and D. L. Huffaker
Nanoscale, 9, 8220-8228 (2017)
Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature
Hyunseok Kim, Wook-Jae Lee, Alan C. Farrell, Juan S. D. Morales, Pradeep Senanayake, Sergey V. Prikhodko, Tomasz J. Ochalski, and Diana L. Huffaker
Nano Letters, 17(6), 3465-3470 (2017)
Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
YJ Ma, YG Zhang, Y Gu, SP Xi, XY Chen, Baolai Liang, Bor-Chau Juang, Diana L Huffaker, B Du, XM Shao, JX Fang
AIP Advances 7 (7), 075117 (2017)
Enhanced carrier multiplication in InAs quantum dots for bulk avalanche photodetector applications
Y. J. Ma, Y. G. Zhang, Y. Gu, X. Y. Chen, P. Wang, B. C. Juang, A. Farrell, B. L. Liang, D. L. Huffaker, Y. H. Shi, W. Y. Ji, B. Du, S. P. Xi, H. J. Tang, J. X. Fang
Advanced Optical Materials, 1601023 (2017)
Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells
Mukul C. Debnath, Baolai Liang, Ramesh B. Laghumavarapu, Guodong Wang, Aparna Das, Bor-Chau Juang and Diana L. Huffaker
Journal of Applied Physics, 121, 214304 (2017)
Photoluminescence study of the interface fluctuation effect for InGaAs/InAlAs single quantum well with different thickness
Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L Huffaker
Nanoscale Research Letters 12:229 (2017)
Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
Christopher Yerino, Baolai Liang, Diana Huffaker, Paul J. Simmonds, Minjoo Larry Lee
J. Vac. Sci. Technol. B 35, 010801 (2017)
Absorption dynamics of type-II GaSb/GaAs quantum dots
K. Komolibus, T. Piwonski, C. J. Reyner, B. L. Liang, G. Huyet, D. Huffaker, E.A. Viktorov, and J. Houlihan
Optical Materials Express. 7(4) 1424-1427, (2017)
Selective-area InAsSb Nanowires on InP for 3 - 5 um Mid-wavelength Infrared Optoelectronics
Ren, D., Farrell, A., & Huffaker, D. L.
MRS Advances (2017)
Characterization of GaSb photodiode for gamma-ray detection
B. C. Juang, D. L. Prout, B. L. Liang, A. F. Chatziioannou and D. L. Huffaker
Applied Physics Express, 9, 086401 (2016)
InAs/InAsP core/shell nanowire photodiode on a Si substrate
Shiyu Xie, Hyunseok Kim, Wook-Jae Lee, Alan C. Farrell, John P. David, and Diana L. Huffaker
Nano Advances, 1, 110-114 (2016)
Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
Guodong Wang, Baolai Liang, Bor-Chau Juang, Aparna Das, Mukul Debnath, Diana L. Huffaker, Yuriy Mazur, Morgan E. Ware, Gregory G. Salamo
Nanotechnology, 27, 465701 (2016)
Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures
O. D. D. Couto Jr., P. T. de Almeida, G. E. dos Santos, M. A. G. Balanta, H. F. Andriolo, J. A. Brum, M. J. S. P. Brasil, and F. Iikawa, B. L. Liang, and D. L. Huffaker
J. Appl. Phys. 120, 084305 (2016)
Correction to Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links
Hyunseok Kim, Alan C. Farrell, Pradeep Senanayake, Wook-Jae Lee*, and Diana. L. Huffaker
Nano Lett., 16 (4), pp 2896?2896 (2016)
Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links
Kim, Hyunseok; Farrell, Alan C.; Senanayake, Pradeep; Wook-Jae Lee, and Diana L. Huffaker
Nano Lett., 16 (3), pp 1833?1839 (2016)
Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources
Wook-Jae Lee, Hyunseok Kim, Alan C. Farrell, Pradeep Senanayake, and Diana L. Huffaker
Appl. Phys. Lett. 108, 081108 (2016)
High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light
Wook-Jae Lee, Pradeep Senanayake, Alan C. Farrell, Andrew Lin, Chung-Hong Hung, and Diana L. Huffaker
Nano Lett. 16 (1), pp 199?204 (2016)
InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors
Gamini Ariyawansa, Charles J. Reyner, Elizabeth H. Steenbergen, Joshua M. Duran, Joshua D. Reding, John E. Scheihing, Henry R. Bourassa, Baolai L. Liang, Diana L. Huffaker
Appl. Phys. Lett. 108, 022106 (2016)
High-density InAs/GaAs1-xSbxquantum dots grown by molecular beam epitaxy for use in intermediate band solar cells
M. C. Debnath, M. B. Santos, Y. Cheng, I. R. Sellers, K. Hossain, R. B. Laghumavarapu, B. L. Liang, and D. L. Huffaker
J. Appl. Phys. 119, 114301 (2016)
Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation
Katarzyna Komolibus, Adam C. Scofield, Kamil Gradkowski, Tomasz J. Ochalski, Hyunseok Kim, Diana L. Huffaker, and Guillaume Huyet
Appl. Phys. Lett. 108, p. 061104, 2016
Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodetectors
Alan C. Farrell, Pradeep Senanayake, Chung-Hong Hung, Abhijeet Rajagopal, Marc Currie, Georges El-howayek, Majeed Hayat, Diana L. Huffaker
Scientific Reports 5: 17580 (2015)
High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition
Alan C. Farrell, Wook-Jae Lee, Pradeep Senanayake, Michael A. Haddad, Sergey Prihodko, , Diana L. Huffaker
Nano Letters 15(10): 6614-6619 (2015)
Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots
Zhexin Zhao, Ramesh B. Laghumavarapu, Paul J. Simmonds, Haiming Ji, Baolai Liang, and Diana L. Huffaker
J. Crystal. Growth. 425 (2015) 312-315 (DOI:10.1016/j.jcrysgro.2015.02.049)
GaSb Thermophotovoltaic Cells Grown on GaAs by Molecular Beam Epitaxy Using Interfacial Misfit Arrays
Bor-Chau Juang, Ramesh Babu Laghumavarapu, Paul Simmonds, Andrew Lin, Baolai Liang, and Diana Huffaker
Appl. Phys. Lett. 106(11) 111101 (2015)
Ultrafast dynamics of type-II GaSb/GaAs quantum dots
K. Komolibus, T. Piwonski, K. Gradkowski, G. Huyet, C. J. Reyner, B. L. Liang, D. L. Huffaker, and J. Houlihan
Appl. Phys. Lett. 106, 031106 (2015)
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with highly efficient photoluminescence
H. M. Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, and Diana L. Huffaker
Appl. Phys. Lett. 106(10), 103104 (2015)
Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces
C. A. Nelson, J. Luo, A. K.-Y. Jen, R. B. Laghumavarapu, D. L. Huffaker, and X.-Y. Zhu
J. Phys. Chem. C, 118 (48), pp 27981?27988 (2014)
Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate
J. M. Borrego, E. Brown, P. Greiff, D. L. Huffaker, R. B. Laghumavarapu, J. Kim and P. S. Dutta
J. Renewable Sustainable Energy, 6, 011207 (2014)
Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap
Christopher D. Yerino, Paul J. Simmonds, Baolai Liang, Vitaliy G. Dorogan, Morgan E. Ware, Yuriy I. Mazur, Daehwan Jung, Diana L. Huffaker, Gregory J. Salamo, and Minjoo Larry Lee
Applied Physics Letters, 105, 071912, (2014)
Improved quantum dot stacking for intermediate band solar cells using strain compensation
Paul J. Simmonds, Meng Sun, Ramesh B. Laghumavarapu, Baolai Liang, Andrew G. Norman, Jun-Wei Luo, and Diana L. Huffaker
Nanotechnology, 25(44), 445402, (2014)
Investigation of Optical Transitions in InAs/GaAs(Sb)/AlAsSb QDs using Modulation Spectroscopy
Zachary S. Bittner, Staffan Hellstroem, Stephen J. Polly, Ramesh B. Laghumavarapu, Baolai Liang, Diana L. Huffaker, and Seth M. Hubbard
Applied Physics Letters, 105, 253903 (2014)
Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
Christopher Yerino, Paul Simmonds, Baolai Liang, Daehwan Jung, Christian Schneider, Sebastian Unsleber, Minh Vo, Diana Huffaker, Sven Hofling, Martin Kamp, and Minjoo Larry Lee
Applied Physics Letters, 105, 251901, (2014)
Tuning the Au-free InSb nancrystal morphologies grown by patterned metal-organic chemical vapor deposition
Andrew Lin, Joshua Shapiro, Holger Eisele, and Diana Huffaker
Advanced Functional Materials, 24(27), 4311-4316, (2014)
Axial diffusion barriers in near-infrared nanopillar LEDs
A. C. Scofield, A. Lin, M. Haddad, D. L. Huffaker
Nano Letters, 14(11), 6037-6041, (2014)
GaAs nanopillars-array solar cells employing in situ surface passivation
G. Mariani, A. Scofield, C.-H. Hung, D.L. Huffaker
Nature Communications, 4, 1497 (2013)
Direct-bandgap epitaxial core-multishell nanopillar photovoltaics featuring subwavelength optical concentrators
G. Mariani, Z. Zhou, A. Scofield, D. L. Huffaker
Nano Letters, 13(4), 1632-1637 (2013)
GaSb/InGaAs quantum dot-well hybrid structures as active regions in solar cells
Ramesh B. Laghumavarapu, Baolai Liang, Zachary Bittner, Tugba S. Navruz, Seth Hubbard and Diana L. Huffaker
Solar Energy Materials and Solar Cells, 114, 165-171, (2013)
Site-controlled formation of InGaAs quantum nanostructures - tailoring the dimensionality and the quantum confinement
B. L. Liang, P. S. Wong, D. L. Huffaker, T. Tran, C. K. Shih, V. G. Dorogan, Yu. I. Mazur, M. E. Ware, G. J. Salamo
Nano Research, 6(4), 235-242, (2013)
Carrier localization and effect of in-situ annealing in quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition
Jiri Thoma, Baolai Liang, Liam Lewis, Stephen Peter Hegarty, Guillame Huyet, Diana L. Huffaker
Appl. Phys. Lett., 102, 113101, (2013)
Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices
Jiri Thoma, Baolai Liang, Charles J. Reyner, Tomasz Jan Ochalski, David P. Williams, Stephen P. Hegarty, Guillame Huyet, Diana L. Huffaker
Appl. Phys. Lett. 102(1), 013120, (2013)
Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices
Jiri Thoma, Baolai Liang, Liam Lewis, Stephen Peter Hegarty, Guillame Huyet, Diana L. Huffaker
Appl. Phys. Lett. 102(5), 053110, (2013)
Strong passivation effect on the properties of InAs surface quantum dot hybrid structure
A. Lin, B. L. Liang, V. G. Dorogan, Yu. I. Mazur, G. G. Tarasov, G. J. Salamo, D. L. Huffaker
Nanotechnology, 24(7), 075701, (2013)
Enhanced InAs nanopillar electrical transport by in-situ passivation
Andrew Lin, Joshua Shapiro, Adam C. Scofield, Baolai Liang, Diana L. Huffaker
Appl. Phys. Lett. 102(5), 053115, (2013)
800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
Tobias Nowozin, Leo Bonato, Annika Högner, Alissa Wiengarten, Dieter Bimberg Wei-Hsun Lin, Shih-Yen Lin, Charles J. Reyner, Baolai Liang, Diana L. Huffaker
Appl. Phys. Lett. 102(5), 052115, (2013)
Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
Meng Sun, Paul Jonathan Simmonds, Ramesh Babu Laghumavarapu, Andrew Lin, Charles J. Reyner, Hsin-Sheng Duan, Baolai Liang, Diana L. Huffaker
Appl. Phys. Lett. 102(2), 023107, (2013)
Strongly coupled slow-light polaritons in disordered one-dimensional localized states
Jie Gao, Sylvain Combrie, Baolai Liang, Peter Schmitteckert, Gaelle Lehoucq, Stephane Xavier, Norman Nan Shi, Kurt Busch, Diana L. Huffaker, Alfredo De Rossi, and Chee Wei Wong
Nature Scientific reports, doi:10.1038/srep01994 (2013)
Tuning quantum dot luminescence below the bulk band-gap using tensile strain
Paul J. Simmonds, Christopher D. Yerino, Meng Sun, Baolai Liang, Diana L. Huffaker, Vitaliy G. Dorogan, Yuriy I. Mazur, Gregory J. Salamo, and Minjoo Larry Lee
ACS Nano, 7 (6), 5017-5023, (2013)
Photonics based on carbon nanotubes
Qingyuan Y Gu, Maud Gicquel-Guézo, Frederic Grillot, Slimane Loualiche, Julie Le Pouliquen, Thomas Batte, Olivier Dehaese, Baolai L Liang, Diana L. Huffaker
Nanoscale Research Letters, 8:300, (2013)
The anisotropic electro-optic effect of InGaAs quantum dot chain modulators
Wei Liu, Baolai Liang, Diana Huffaker, and Harold Fetterman
Opt. Lett., Vol. 38, Issue 20, pp. 4262-4264 (2013)
Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors
P. Senanayake, C.-H. Hung, A. Farrell, D.A. Ramirez, J. Shapiro, C.-K Li, Y.-R. Wu, M.M. Hayat, and D.L. Huffaker
Nano Lett, 12, 6448-6452 (2012)
3D Nanopillar optical antenna photodetectors
P. Senanayake, C.-H. Hung, J. Shapiro, A. Scofield, A. Lin, B.S. Williams, and D.L. Huffaker
Opt. Express 20, 25489-25496 (2012)
Composite axial/core-shell nanopillar light emitting diodes at 1.3 µm.
A.C. Scofield, A. Lin, J.N. Shapiro, P.N. Senanayake, G. Mariani, M. Haddad, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 101, 053111 (2012)
Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures
Y.I. Mazur, V.G. Dorogan, G.J. Salamo, G.G. Tarasov, B.L. Liang, C.J. Reyner, K. Nunna, and D.L. Huffaker
Appl. Phys. Lett. 100, 033102 (2012)
Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique
K. Nunna, S.L. Tan, C.J. Reyner, A.R.J. Marshall, B.L. Liang, A. Jallipalli, J.P.R. David, D.L. Huffaker
IEEE Photonic Technology Letter. 24(3), 218-220 (2012)
Extracting transport parameters in GaAs nanopillars grown by selective-area epitaxy
A. Lin, J.N. Shapiro, P.N. Senanayake, A.C. Scofield, P.S. Wong, B.L. Liang, and D.L. Huffaker
Nanotechnology, 23 (2012) 105701
Strong interband transitions in InAs quantum dots solar cell
J. Wu, Y.F.M. Makableh, R. Vasan, M.O. Manasreh, B.L. Liang, C.J. Reyner, and D.L. Huffaker
Appl. Phys. Lett., 100, 051907 (2012)
Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems
K. Gradkowski, T.J. Ochalski, N. Pavarelli, H.Y. Liu, J. Tatebayashi, D.P. Williams, D.J. Mowbray, G. Huyet, D.L. Huffaker
Phys. Rev. B. 85(3), 035432 (2012)
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers
P.J. Simmonds, R.B. Laghumavarapu, M. Sun, A. Lin, C.J. Reyner, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett. 100(24), 243108, (2012)
Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy
L. Ouyang, E.H. Steenbergen, Y.H. Zhang, K. Nunna, D.L. Huffaker, D.J. Smith
Journal of Vacuum Science & Technology B 30(2) 02B106 (2012)
Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
E.H. Steenbergen, K. Nunna, L. Ouyang, B. Ullrich, D.L. Huffaker, D.J. Smith, Y.H. Zhang
Journal of Vacuum Science & Technology B 30(2) 02B107(2012)
Three-Dimensional Core-Shell Hybrid Solar Cells via Controlled in Situ Materials Engineering
G. Mariani, Y. Wang, P.S. Wong, A. Lech, C.H. Hung, J.N. Shapiro, S. Prikhodko, M. El-Kady, R.B. Kaner, and D.L. Huffaker
Nano Letters, 12(7), 3581-3586 (2012)
Exciton-photon coupling of InAs quantum dot in GaAs photonic crystal mode-gap nanocavities
J. Gao, S. Combrie, B.L. Liang, G. Lehoucq, D.L. Huffaker, D. Englund, A. De Rossi, and C.W. Wong
CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011)
Bottom-up Photonic Crystal Lasers
A.C. Scofield, S-H Kim, J.N. Shapiro, A. Lin, B.L. Liang, A. Scherer, D.L. Huffaker
Nano Letters, 11(12), 5387-5390, (2011)
High-Speed InAs Quantum-Dot Electrooptic Phase Modulators
W. Liu, R.S. Kim, B.L. Liang, D.L. Huffaker, H.R. Fetterman
IEEE Photonics Technology Letters, 23(23) 1748-50 (2011)
Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar
J.N. Shapiro, A. Lin, and D.L. Huffaker, C. Ratsch
Phys. Rev. B, 84, 085322 (2011)
Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction
C.J. Reyner, J. Wang, K. Nunna, A. Lin, B.L. Liang, M.S. Goorsky, and D.L. Huffaker
Appl. Phys. Lett. 99, 231906 (2011)
Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: A Transmission Electron Microscopy Study
S.H. Huang, G. Balakrishnan, D.L. Huffaker
Journal of Nanoscience and Nanotechnology, 11(6), 5108-5113, (2011)
Surface Plasmon-Enhanced Nanopillar Photodetectors
P.N. Senanayake, C.H. Hung, J.N. Shapiro, A. Lin, B.L. Liang, B.S. Williams, and D.L. Huffaker
Nano Letters 11(12), 5279-5283 (2011)
Bottom-up Photonic Crystal Cavities Formed by Patterned III-V Nanopillars
A.C. Scofield, J.N. Shapiro, A. Lin, A.D. Williams, P.S. Wong, B.L. Liang, and D.L. Huffaker
Nano Letters, 11(6), 2242, (2011)
Patterned Radial GaAs Nanopillar Solar Cells
G. Mariani, P.S. Wong, A.M. Katzenmeyer, F. Leonard, J.N. Shapiro, D.L. Huffaker
Nano Letters, 11(6), 2490, (2011)
Lateral interdot carrier transfer in InAs quantum dot cluster grown on pyramidal GaAs surface
B.L. Liang, P.S. Wong, N. Pavarelli, J. Tatebayashi, T.J. Ochalski, G. Huyet, D.L. Huffaker
Nanotechnology, 22(5), 055706 (2011)
Enhanced Properties in Single-Walled Carbon Nanotubes based Saturable Absorber for All Optical Signal Regeneration
H. Nong, M. Gicquel, L. Bramerie, M. Perrin, F. Grillot, R. Fleurier, B.L. Liang, D.L. Huffaker, C. Levallois, J. Le Pouliquen, A. Le Corre, O. Dehaese, S. Loualiche
Jpn. J. Apply. Phys. 50 (2011) 040206
Self-catalyzed vapor-liquid-solid growth of wurtzite InP/InAsP core-shell nanopillars
B.L. Liang, J. Tatebayashi, S. Kodambaka, D.L. Huffaker, R.F. Hicks
Journal of Crystal Growth, 314(1) 34-38 (2011)
InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation
P.S. Wong, B.L. Liang, and D.L. Huffaker
Journal of Nanoscience and Nanotechnology 10(3) 1537-1550 (2010)
Controlled Formation and Dynamic Wulff Simulation of Equilibrium Crystal Shapes of GaAs Pyramidal Structures on Nanopatterned Substrates
P.S. Wong, B.L. Liang, R. Molecke, J. Tatebayashi, D.L. Huffaker
Crystal Growth & Design, 10(6), 2509-2514 (2010)
Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes
J. Tatebayashi, G. Mariani, A. Lin, R.F. Hicks, and D.L. Huffaker
Appl. Phys. Lett., 96 253101 (2010)
Hybrid Conjugated Polymer Solar Cells using Patterned GaAs Nanopillars
G. Mariani, R.B. Laghumavarapu, B. Tremolet de Villers, J.N. Shapiro, P.N. Senanayake, A. Lin, B.J. Schwartz and D.L. Huffaker
Appl. Phys. Lett., 97 013107 (2010)
Visible Light Emission from Self-Catalyzed GaInP/GaP Core-Shell Double Heterostructure Nanowires on Silicon
J. Tatebayashi, A. Lin, P.S. Wong, R. F. Hicks, and D.L. Huffaker
J. Appl. Phys. 108, 034315 (2010)
Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: Control of type I to type II transition
J. He, C.J. Reyner, B.L. Liang, K. Nunna, D.L. Huffaker, N. Pavarelli, K. Gradkowski, T.J. Ochalski, G. Huyet, V.G. Dorogan, Y.I. Mazur, G.J. Salamo
Nano Letters, 10, 3052, (2010)
Coulomb effect inhibiting spontaneous emission in charged quantum dot
N. Pavarelli, K. Gradkowski, T.J. Ochalski, G. Huyet, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 091105 (2010)
1.52-µm Photoluminescence Emissions from InAs Quantum Dots Grown on Nanopatterned GaAs Buffers
P.S. Wong, B.L. Liang, A. Lin, J. Tatebayashi, and D.L. Huffaker
Appl. Phys. Lett., 97 143111 (2010)
InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
J.N. Shapiro, A. Lin, A.C. Scofield, C. Tu, P.S. Wong, P.N. Senanayake, G. Mariani, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 243102 (2010)
Photoconductive Gain in Patterned Nanopillar Photodetector Arrays
P.N. Senanayake, A. Lin, G. Mariani, J.N. Shapiro, C. Tu, A.C. Scofield, P.S. Wong, B.L. Liang, D.L. Huffaker
Appl. Phys. Lett., 97 203108 (2010)
Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires
A.M. Katzenmeyer, F. Leonard, A.A. Talin, P.S. Wong, and D.L. Huffaker
Nano Letters, 10(12) 4935-4938 (2010)
Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode
H. Huang, G. Balakrishnan, V. Klimov, L.R. Dawson, and D.L. Huffaker
IEEE Trans. on Nanotech. 8(2) 269 (2009)
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
J. Tatebayashi, N. Nuntawong, P.S. Wong, Y.C. Xin, L.F. Lester, and D.L. Huffaker
Journal of Physics. D: Applied Physics 42, 073002 (2009)
Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut SI Substrates
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, K. Nunna, G. Balakrishnan, L.R. Dawson, D.L. Huffaker
IEEE Journal of Selected Topics in Quantum Electronics, 15(3) 716, (2009).
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90o misfit dislocations
A. Jallipalli, G. Balakrishnan, S.H. Huang, T.J. Rotter, K. Nunna, B.L. Liang, L.R. Dawson, and D.L. Huffaker
Nano. Res. Lett., 4(12), 1458-1462 (2009)
Compensation of interfacial states located inside the "buffer-free" GaSb/GaAs (001) heterojunction via δ-doping
A. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, G.B. Lush, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 95 072109 (2009)
Electronic characteristics of interfacial states embedded in the "buffer-free" GaSb/GaAs (001) heterojunctions
A. Jallipalli, K. Nunna, M.N. Kutty, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 95 202107 (2009)
GaSb/GaAs type-II quantum dots grown by droplet epitaxy
B.L. Liang, A. Lin, N. Pavarelli, C.J. Reyner, J. Tatebayashi, K. Nunna, J. He, T.J. Ochalski, G. Huyet, D.L. Huffaker
Nanotechnology, 20(45) 455604 (2009)
Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots
P.S. Wong, B.L. Liang, J. Tatebayashi, L. Xue, N. Nuntawong, M.N. Kutty, S. R. J. Brueck, and D.L. Huffaker
Nanotechnology, 20 035302 (2009)
Continuous-wave lasing at room-temperature of 2-µm Sb-based optically-pumped VECSELs monolithically grown on GaAs substrates
T.J. Rotter, J. Tatebayashi, P. Senanayake, M. Rattunde, J. Wagner, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Express., 2(11), 112102 (2009)
Interfacial misfit array formation for GaSb growth on GaAs
Shenghong Huang, Ganesh Balakrishnan, and D.L. Huffaker
J. Appl. Phys. 105, 103104 (2009)
Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon
L. Gao, R.L. Woo, B.L. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M.K. Hudait, D.L. Huffaker, M.S. Goorsky, S. Kodambaka, and R.F. Hicks
Nano Lett., 9(6), 2223-2228 (2009)
Optical transition pathways in type-II Ga(As)Sb quantum dots
K. Gradkowski, T.J. Ochalski, D.P. Williams, J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, E.P. O'Reilly, G. Huyet, L.R. Dawson, D.L. Huffaker
J. of Luminescence, 129(5), 456-460 (2009)
Coulomb effects in type-II Ga(As)Sb quantum dots
K.Gradkowski, T.J. Ochalski, D.P. Williams, S.B. Healy, J. Tatebayashi, G. Balakrishnan, E.P. O'Reilly, G. Huyet, and D.L. Huffaker
Phys. Status Solidi B, 246 (4), 752 (2009)
Complex emission dynamics of type-II GaSb/GaAs quantum dots
K. Gradkowski, N. Pavarelli, T.J. Ochalski, D.P. Williams, J. Tatebayashi, G. Huyet, E.P. O'Reilly, D.L. Huffaker
Appl. Phys. Lett., 95 061102 (2009)
Strain-compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
J. Tatebayashi, N. Nuntawong, P.S. Wong, Y.C. Xin, L.F. Lester, and D.L. Huffaker
J. Physics D, 42, 073002 (2009)
Record pulsed power demonstration of a 2 µm GaSb-based opticaly pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate
J.M. Yarborough, Y.Y. Lai, Y. Kaneda, J. Hader, J.V. Moloney, T.J. Rotter, G. Balakrishnan, C. Hains, D.L. Huffaker, S.W. Koch, and R. Bedford
Appl. Phys. Lett., 95 081112 (2009)
Self-Organized Formation of GaSb=GaAs Quantum Rings
R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dahne
Phys. Rev. Lett. 101(25) 256101 (2008)
Electrical and structural characterization of a single GaSb/InAs/GaSb quantum well grown on GaAs using interface misfit dislocation
K.G. Eyink, A. Jallipalli, G. Balakrishnan, D.L. Huffaker, D.H. Tomich, W.C. Mitchel, L. Grazulis, J.A. Carlin, K. Mahalingam, and S. Elhamri
Journ. Appl. Phys. 104, 074901 (2008)
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
R. Timm, A. Lenz, H. Eisele, L. Ivanova, M. Dähne, G. Balakrishnan, D.L. Huffaker, I. Farrer and D. A. Ritchie
J. Vac. Sci. Technol. B 26(4) 1492 (2008)
ISI times cited: 1
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, P. Li, L.R. Dawson and D.L. Huffaker
Appl. Phys. Lett., 93 071102 (2008)
Device characteristics of GaInSb/AlGaSb quantum well lasers monolithically grown on GaAs substrates by using an interfacial misfit arra
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, T.J. Rotter, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
J. Electronic Materials 37 1758 (2008)
Fabrication of Self-aligned Enhancement-mode In0.53Ga0.47As
D. Shahrjerdi, T. Rotter, G. Balakrishnan, D.L. Huffaker, E. Tutuc and S.K. Banerjee
IEEE Electron. Dev. Lett., 29, 6 (2008)
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure
P.S. Wong, B.L. Liang, V. G. Dorogan, A.R. Albrecht, J. Tatebayashi, X. He, N. Nuntawong, Y.I. Mazur, G.J. Salamo, S.R.J. Brueck, and D.L. Huffaker
Nanotechnology, 19(43), 435710 (2008)
Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in InGaAs quantum well
J. Tatebayashi, B.L. Liang, R.B. Laghumavarapu, D.A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Nanotechnology, 19(29), 295704 (2008)
Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth
S.C. Lee, D.L. Huffaker, and S.R.J. Brueck
Applied Physics Letters, vol. 92, pp. 023103-1-3 (2008)
Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
R.B. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L.F. Lester, and D.L. Huffaker
Applied Physics Letters, vol. 91, pp. 243115-1-3 (2007)
Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids
B.L. Liang; P.S. Wong, N. Nuntawong, A. R. Albrecht, J. Tatebayashi, T.J. Rotter, G. Balakrishnan, and D.L. Huffaker
Applied Physics Letters, vol. 91, no. 24, pp.243106-1-3 (2007)
Room-temperature operation of buffer-free GaSb/AlGaSb quantum-well diode lasers developed on a GaAs platform emitting at 1.65 µm
M. Mehta, G. Balakrishnan, A. Jallapali, M.N. Kutty, L.R. Dawson, and D.L. Huffaker
Photonics Technology Letters, vol. 19, no. 20, pp. 1628-1630, October 15 2007.
1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays
A. Jallipalli, M.N. Kutty, G. Balakrishnan, J. Tatebayashi, N. Nuntawong, S.H. Huang, L.R. Dawson, D.L. Huffaker, Z. Mi and P. Bhattacharya
Electronics Letters, vol. 43, no. 22, October 25 2007.
Room-temperature lasing at 1.82 µm of GaInSb/AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, vol. 91, no. 14, pp. 1411021-3, October 2007.
Single dot spectroscopy of patterned InAs quantum dots regrown on pyramidal GaAs buffers
T. Tran, K.C. Shin, P.S. Wong, N. Nuntawong, J. Tatebayashi, D.L. Huffaker
Applied Physics Letters, vol. 91, no. 13, pp. 133104-1-3, September 26 2007.
Room temperature InGaSb quantum well microcylinder lasers at 2um grown monolithically on a silicon substrate
T. Yang, L. Lu, M.H. Shih, J.D. O'Brien, G. Balakrishnan, and D.L. Huffaker
Journal of Vacuum Science and Technology, vol. 25, September 5 2007.
Arsenic-induced etched nanovoids on GaSb (100)
S.H. Huang, G. Balakrishnan, M. Mehta, L.R. Dawson, P. Li, and D.L. Huffaker
Journal of Applied Physics, vol. 102, no. 04, pp. 044312-1-3, August 2007.
Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well
J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. Huang, M. Mehta, D. A. Bussian, H. Htoon, V. Klimov, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 26, pp. 261115-1-3, June 2007.
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
P.S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 18, pp. 183103-1-3, April 2007.
GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response
R.B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, L.F. Lester, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 17, pp. 173125-1-3, April 2007.
Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb
S.H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L.R. Dawson, P. Li, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 16, pp. 161902-1-3, April 2007.
Measurement of electro-optic coefficients of 1.3 µm self-assembled InAs=GaAs quantum dots
J. Tatebayashi, R.B. Laghumavarapu, N. Nuntawong, and D.L. Huffaker
Electronics Letters, vol. 43, no. 7, pp. 410-412, March 29 2007.
Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures
N. Nuntawong, J. Tatebayashi, P.S. Wong, and D.L. Huffaker
Applied Physics Letters, vol. 90, no. 16, pp. 163121-1-3, 2007.
Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates
G. Balakrishnan, M. Mehta, M.N. Kutty, P. Patel, A.R. Albrecht, P. Rotella, S. Krishna, L.R. Dawson, and D.L. Huffaker
Electronics Letters, vol. 43, no. 4, February 15 2007.
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials
A. Jallipalli, G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, L.R. Dawson, D.L. Huffaker
Journal of Crystal Growth vol. 303, no. 1-4 pp. 449-455 (2006)
Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots
J. Tatebayashi, A. Khoshakhlagh, S.H. Huang, L.R. Dawson, G. Balakrishnan, and D.L. Huffaker
Applied Physics Letters, 89(20) 203116 (2006)
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G. Balakrishnan, J. Tatebayashi, A. Khoshakhlagh, S.H. Huang, A. Jallipalli, L.R. Dawson, and D.L. Huffaker
Applied Physics Letters, 89(16) 161104 (2006)
Ground-state Lasing of Stacked InAs/GaAs Quantum Dots With GaP Strain-compensation Layers Grown by metal organic Chemical Vapor Deposition
J. Tatebayashi, N. Nuntawong, Y.C. Xin, P.S. Wong, S. Huang, L.F. Lester and D.L. Huffaker
Applied Physics Letters, 88 221107 (2006)
Strain relief on periodic misfit arrays for low defect density GaSb on GaAs
S.H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L.R. Dawson, D.L. Huffaker
Applied Physics Letters, 88(13) 131911 (2006)
Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C.P. Haines, L.R. Dawson and D.L. Huffaker
Electronics Letters, 42(6) 350-52 (2006)
GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays
M. Mehta, G. Balakrishnan, S. Huang, A. Khoshakhlagh, A. Jallipalli, P. Patel, M.N. Kutty, L.R. Dawson, and D.L. Huffaker
Appl. Phys. Lett., 89 211110 (2006)
Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition
N. Nuntawong, Y.C. Xin, S. Birudavolu, P.S. Wong, S. Huang, C.P. Hains, D.L. Huffaker
Applied Physics Letters, 86(19) 193115 (2005)
Room-temperature Optically-pumped InGaSb quantum well lasers monolithically grown on Si (100) substrate
G. Balakrishnan, S.H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G.P. Donati, L.R. Dawson, D.L. Huffaker
Electronics Letters, vol. 41, no. 9, pp. 531-532 (2005)
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition
S. Birudavolu, S.Q. Luong, N. Nuntawong, Y.C. Xin, C.P. Hains, D.L. Huffaker
Journal of Crystal Growth vol. 277, no. 1-4 pp. 97-103 (2005)
Growth mechanisms of highly mismatched AlSb on a Si substrate
G. Balakrishnan, S.H. Huang, L.R. Dawson, Y.C. Xin, P. Conlin, D.L. Huffaker
Applied Physics Letters, vol. 86, no. 3, pp. 34105-1-3, January 17 2005
Effect on strain-compensation in stacked 1.3 µm in As/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition
N. Nuntawong, S. Birudavolu, C.P. Hains, S. Huang, H. Xu, D.L. Huffaker
Applied Physics Letters, vol. 85, no. 15, pp. 3050-3052, October 11 2004
Patents & Disclosures
Avalance Photodiode Utilizing an Interfacial Misfit Array
UCLA Case No. 2013-785
Nanopillar Photonic Crystal Lasers
U.S. Provisional Patent Application No.: 61/551,817
Gaas/InGaAs Axial Heterostructure Formation in Nanopillars By Catalyst-Free Selective Area MOCV
U.S. Application No. 61/448,017
Plasmonically enhanced nanowire focal plane arrays for infrared detection
UCLA Case No. 2013-677-1
Plasmonically enhanced nanopillar separate absorpition multiplication diodes (PEN-SAMD)
UCLA Case No. 2012-531-2
Self-Aligned Periodic Metal Holes Arrays Integrated with Nanowire Arrays
U.S. Provisional Patent. UC-2011-598-1-LA
Vertical-Cavity Surface-Emitting Laser Diode Array with Wavelength Control Through Lateral Index-Confinement
US 60/020,471
Subwavelength nanolens arrays as optical concentrators in anowire photovoltaics
US 61/773,747
Nanophotonic devices couples to dielectric waveguides
U.S. Provisional Patent 61/823,720
Monolithically integrated devices with embedded heteroepitaxy using double interfacial misfit arrays
Disclosure submitted 2006
Trapping misfit dislocations in lattice mismatched crystal growth
Disclosure submitted 2004, converted to full utility appplication 2005
Monolithic, self-assembled quantum dots for nucleation in highly lattice mismatched systems
Disclosure submitted 2004, converted to full utility appplication 2005
Hard/soft short period superlattices for heterogenous and highly lattice mismatched systems
Disclosure submitted 2004
Misfit Dislocation Forming Interfacial Self-Assembly for Growth of Highly Mismatched III-Sb Alloys
U.S. Application 8,410,523
Densely stacked and strain-compensated quantum dot active regions
US 7,795,609
Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si
US 7,700,395
Quantum dots nucleation layer of lattice mismatched epitaxy
US 7,432,175
In-Situ Mask Removal In Selective Area Epitaxy Using Metal Organic Chemical Vapor Deposition
US 7,288,423
Low Threshold Microcavity Light Emitter
US 6,370,179