bullet Indium phosphide 111(A) surface structures

 

Shown below are STM images of the InP (111)A surface structures.

To learn more, check out some of our publications.

 

 

Image size = 216 x 216 2, inset = 40 x 40 2, sample bias  = +3.1 V

 

InP (111)A-(2x2) reconstruction, In-vacancy structure, similar to the (2x2) observed on GaAs (111)A.

Image size = 216 x 216 2, inset = 35 x 35 2, sample bias = + 3.6 V

 

 

InP (111)A-(√3x√3) reconstruction, similar to that observed on SiC (0001) and adsorbate-covered Si (111) surface. 

 

Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles.

For information, please contact Professor Robert F. Hicks
Last Modified May 21, 2007 05:58 PM