Research

Molecular Beam Epitaxy (MBE)

INML is currently equipped with two state-of-art modern Molecular Beam Epitaxy (MBE) reactors to provide semiconductor wafer growth foundry services. BE-I is designed to provide (In, Ga, Al - As, Sb) epitaxial wafers, While MBE-II is designed to provide (In, Ga, Al - N) epitaxial wafers. This is the only (III-As / Sb + III-N) combined MBE system at UCLA's campus.

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[equipment]

MBE Chamber 1: III-As/Sb

Veeco Gen 930, III-As/Sb MBE system is equipped with:

  • In, Ga, Al effusion cells for group III
  • Automated valved crackers for As and Sb
  • Si, Te and Be cells for dopant sources
  • Reflection High Energy Electron Diffration (RHEED) from STAIB for in-situ monitoring
  • KSA400 software for growth rate calibration, surface reconstruction studies and ability to capture image/videos for post-growth analysis
  • Residual Gas Analysis (RGA) module from SRS for checking various gas species up to 100 a.m.u
  • Up to 3" diameter wafers
  • Automated Growth control - MOLLY
  • 200 a.mu. RGS-SRS
  • Emissivity correcting optical pyrometer
[equipment]

MBE Chamber 2: III-N

Veeco Gen 930, III-N MBE system is equipped with:

  • In, Ga, Al effusion cells for group III
  • Si and Mg cells for dopant sources
  • N plasma source with RF generator
  • Fully automated N gas delivery system
  • High temperature substrate heater - 1200°C
  • Up to 3" diameter wafers
  • Automated Growth control - MOLLY
  • 200 a.mu. RGS-SRS
  • Emissivity correcting optical pyrometer
  • Precise growth rate calibrations up to 1µm/hr