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Recent Publications

Contents:
     II-VI Materials for Devices
     GaAs-Based Materials
     GaN-Based Materials
     InP-Based Materials
     Si-Based Materials:  Si, SiGe
     X-ray Diffraction Techniques



II-VI Materials for Devices

Correlation between nuclear response and defects in CZT, Hermon, H.; Schieber, M.; James, R.B.; Lee, E.; Cross, E.; Goorsky, M.; Lam, T.; Schlesinger, T.E.; Greaves, M., Proceedings of the SPIE - The International Society for Optical Engineering, vol.3768, (Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, Denver, CO, USA, 19-23 July 1999.) SPIE-Int. Soc. Opt. Eng, 1999. p.138-46. 16 references.

Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe, T.T. Lam, C.D. Moore, R.L. Forrest, M.S. Goorsky, S.M. Johnson, D.B. Leonard, T.A. Strand, T.J. deLyon and M.D. Gorwitz, J. Electon. Mater., vol. 29, (no.6), (1999 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Las Vegas, NV, USA, 22-24 Sept. 1999.) TMS; IEEE, June 2000. p. 804-8.

Homogeneity of CdZnTe detectors, Hermon, H.; Schieber, M.; James, R.B.; Lund, J.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.P.; Ivanov, Y.N.; Goorsky, M.S.; Yoon, H.; Toney, J.; Schlesinger, T.E., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip. Netherlands , vol.410, no.1, 1998. p.100-6.

Lead iodide X-ray and gamma-ray spectrometers for room and high temperature operation, Hermon, H.; James, R.B.; Lund, J.; Cross, E.; Antolak, A.; Morse, D.H.; Medlin, D.L.; Soria, E.; Van Scyoc, J.; Brunett, B.; Schieber, M.; Schlesinger, T.E.; Toney, J.; Goorsky, M.; Yoon, H.; Burger, A.; Salary, L.; Chen, K.-T.; Chang, Y.-C.; Shah, K., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997). p.361-8.

Properties of zinc selenide grown by chemical vapor transport and its application to room-temperature radiation detection, Brunett, B.A.; Toney, J.E.; Yoon, H.; Rudolph, P.; Schieber, M.; Schlesinger, T.E.; Goorsky, M.S.; James, R.B., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997).  p.499-503.

Comparison between cadmium zinc telluride crystals grown in Russia and in the Ukraine, Hermon, H.; Schieber, M.; James, R.B.; Yang, N.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.P.; Ivanov, Yu.N.; Komar, V.; Goorsky, M.S.; Yoon, H.; Toney, .; Schlesinger, T.E. in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997).  p.13-18.

Influence of structural defects and zinc composition variation on the device response of Cd/sub 1-x/Zn/sub x/Te radiation detectors, Yoon, H.; Van Scyoc, J.M.; Gilbert, T.S.; Goorsky, M.S.; Brunett, B.A.; Lund, J.C.; Hermon, H.; Schieber, M.; James, R.B., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997).  p.115-20.

Study of the homogeneity of cadmium zinc telluride detectors, Hermon, H.; Schieber, M.; Yang, N.; James, R.B.; Kolesnikov, N.N.P.; Komar, V.; Goorsky, M.S.; Yoon, H.; Toney, J.; Schlesinger, T.E., in Semiconductors for Room-Temperature Radiation Detector Applications II, edited by: James, R.B.; Schlesinger, T.E.; Siffert, P.; Dusi, W.; Squillante, M.R.; O'Connell, M.; Cuzin, M. (Warrendale, PA, USA: Mater. Res. Soc., 1997).  p.223-8.

Mapping high-pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te, Schieber, M.; Hermon, H.; James, R.B.; Lund, J.; Antolak, A.; Morse, D.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Van Scyoc, J.M.; Yoon, H.; Toney, J.; Schlesinger, T.E.; Doty, F.P.; Cozzatti, J.P.D., IEEE Trans. Nucl. Sci., vol.44, no.6, pt.3, 1997. p.2566-70.

Investigation of the effects of polishing and etching on the quality of Cd/sub 1-x/Zn/sub x/Te using spatial mapping techniques, Yoon, H.; Van Scyoc, J.M.; Goorsky, M.S.; Hermon, H.; Schieber, M.; Lund, J.C.; James, R.B., J. Electron. Mater., vol.26, no.6, 1997. p.529-33.

Growth and characterization of p-type Cd/sub 1-x/Zn/sub x/Te x 0.2, 0.3, 0.4, Kolesnikov, N.N.; Kolchin, A.A.; Alov, D.L.; Ivanov, Yu.N.; Chernov, A.A.; Schieber, M.; Hermon, H.; James, R.B.; Goorsky, M.S.; Yoon, H.; Toney, J.; Brunett, B.; Schlesinger, T.E., J. Cryst. Growth, vol.174, no.1-4, 1997. p.256-62.

Evaluation of Russian-grown Cd/sub0.8/Zn/sub 0.2/Te, Schieber, M.M.; Hermon, H.; James, R.B.; Lund, J.C.; Antolak, A.J.; Morse, D.H.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Yoon, H.; Toney, J.E.; Schlesinger, T.E., Proc. SPIE - Int. Soc. Opt. Eng., vol.3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, 1997. p.305-10.

X-ray diffuse scattering for evaluation of wide bandgap semiconductor nuclear radiation detectors, Goorsky, M.S.; Yoon, H.; Schieber, M.; James, R.B.; McGregor, D.S.; Natarajan, M., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.6-9.

Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers, McGregor, D.S.; Antolak, A.J.; Cross, E.S.; Fang, Z.-Q.; Goorsky, M.S.; Henry, R.L.; James, R.B.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Van Scyoc, J.; Yoon, H., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and –Ray Detectors, Associated Electronics and Applications. 1996. p.84-7.

Uniformity of Cd/sub 1-x/Zn/sub x/Te grown by high-pressure, Bridgman, Toney, J.E.; Brunett, B.A.; Schlesinger, T.E.; van Scyoc, J.M.; James, R.B.; Schieber, M.; Goorsky, M.; Yoon, H.; Eissler, E.; Johnson, C., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.132-5.

Characterization of lead iodide for nuclear spectrometers, Schlesinger, T.E.; James, R.B.; Schieber, M.; Toney, J.; Van Scyoc, J.M.; Salary, L.; Hermon, H.; Lund, J.; Burger, A.; Chen, K.-T. Cross, E.; Soria, E.; Shah, K.; Squillante, M.; Yoon, H.; Goorsky, M., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.193-7.

Defect characterization of etch pits in ZnSe based epitaxial layers, U'Ren, G.D.; Goorsky, M.S.; Meis-Haugen, G.; Law, K.K.; Miller, T.J.; Haberern, K.W., Appl. Phys. Lett., vol.69, no.8, 1996. p.1089-91.

Material inhomogeneities in Cd/sub 1-x/Zn/sub x/Te and their effects on large volume gamma-ray detectors, Van Scyoc, J.M.; Lund, J.C.; Morse, D.H.; Antolak, A.J.; Olsen, R.W.; James, R.B.; Schieber, M.; Yoon, H.; Goorsky, M.S.; Toney, J.; Schlesinger, T.E., J. Electron. Mater., vol.25, no.8, 1996. p.1323-7.

Mapping high pressure Bridgman Cd/sub 0.8/Zn/sub 0.2/Te from Russia, Schieber, M.; Hermon, H.; James, R.B.; Lund, J.; Antolak, A.; Morse, D.; Kolesnikov, N.N.; Ivanov, Yu.N.; Goorsky, M.S.; Van Scyoc, J.M.; Yoon, H.; Toney, J.; Schlesinger, T.E.; Doty, F.P.; Cozzatti, J.P.D.,  vol.1 , in IEEE Nuclear Science Symposium, edited by: Del Guerra, A. (New York, NY, USA: IEEE, 1996). p.647-50.

Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures, Goorsky, M.S.; Lindo, S.E.; Guha, S.; Haugen, G.M., J. Electron. Mater., vol.25, no.2, 1996. p.235-8.

Bulk and surface stoichiometry of vapor grown mercuric iodide crystals, Schieber, M.; Roth, M.; Yao, H.; DeVries, M.; James, R.B.; Goorsky, M., J. Cryst. Growth, vol.146, no.1-4, 1995. p.15-22.
 

GaAs-Based Materials

Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, Chen, T.H.; Huang, Y.S.; Lin, D.Y.; Pollak, F.H.; Goorsky, M.S.; Streit, D.C.; Wojtowicz, M. Journal of Applied Physics, vol.88, (no.2), AIP, 15 July 2000. p.883-8.

Lattice tilt and relaxation in InGaP/GaAs/Ge solar cells on miscut substrates, Hess, R. R.; Moore, C. D.; Goorsky, M. S.,  J. Phys. D, vol. 32, no. 10A, 1999. p.A16-A20.

Atomic structure of In/sub x/Ga/sub 1-x/As/GaAs 001 2*4 and 3*2 surfaces, Li, L.; Han, B.K.; Hicks, R.F.; Yoon, H.; Goorsky, M.S., Ultramicroscopy, vol.73, no.1-4, 1998. p.229-35.

Characterization of InGaAs/GaAs 001 films grown by metalorganic vapor phase epitaxy using alternative sources, Han, B.-K.; Li, L.; Kappers, M.J.; Hicks, R.F.; Yoon, H.; Goorsky, M.S.; Higa, K.T., J. Electron. Mater., vol.27, no.2, 1998. p.81-4.

The role of substrate quality on misfit dislocation formation in pseudomorphic high electron mobility transistor structures, Meshkinpour, M.; Goorsky, M.S.; Jenichen, B.; Streit, D.C.; Block, T.R., J. Appl. Phys., vol.81, no.7,1997. p.3124-8.

Evaluating epitaxial growth stability, Christensen, D.H.; Hill, J.R.; Hickernell, R.K.; Matney, K.; Goorsky, M.S., Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol., vol.44, no.1-3, 1997. p.113-16.

Effect of interface defect formation on carrier diffusion and luminescence in In/sub 0.2/Ga/sub 0.8/As/Al/sub x/Ga/sub 1-x/As quantum wells, Rich, D.H.; Rammohan, K.; Lin, H.T.; Tang, Y.; Meshkinpour, M.; Goorsky, M.S., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.14, no.4 , 1996. p.2922-35.

The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer, McGregor, D.S.; Antolak, A.J.; Chui, H.C.; Cross, E.S.; Fang, Z.-Q.; Flatley, J.E.; Goorsky, M.S.; Henry, R.L.; James, R.B.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.W.; Pocha, M.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Van Scyoc, J.; Yoon, H.; Wang, C.L., IEEE Trans. Nucl. Sci. USA , vol.43, no.3, pt.2, (IEEE, 1996). p.1397-406.

Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon, Horng, S.T.; Goorsky, M.S., Appl. Phys. Lett., vol.68, no.11, 1996. p.1537-9.

Degradation of InGaAs high electron mobility transistors: the role of channel composition and thickness, Meshkinpour, M.; Goorsky, M.S.; Streit, D.C.; Block, T.R.; Wojtowicz, M.,  Symposium, Defect and Impurity Engineered Semiconductors and Devices, edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L.. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.783-7.

Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecular-beam epitaxy on GaAs, Eldredge, J.W.; Matney, K.M.; Goorsky, M.S.; Chui, H.C.; Harris, J.S., Jr., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.13, no.2 , 1995. p.689-91.

Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces, Goorsky, M.S.; Meshkinpour, M.; Streit, D.C.; Block, T.R., J. Phys. D, Appl. Phys., vol.28, no.4A, 1995. p.A92-6.

Role of misfit dislocations on pseudomorphic high electron mobility transistors, Meshkinpour, M.; Goorsky, M.S.; Chu, G.; Streit, D.C.; Block, T.R.; Wojtowicz, M., Appl. Phys. Lett., vol.66, no.6 , 1995. p.748-50.

The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer, McGregor, D.S.; Antolak, A.J.; Chui, H.C.; Cross, E.S.; Fang, Z.-Q.; Goorsky, M.S.; Henry, R.L.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.W.; Pocha, M.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Yoon, H.; Wang, C.L., , P.A. in IEEE Nuclear Science Symposium and Medical Imaging Conference Record, edited by: Moonier, (New York, NY, USA: IEEE, 1995). p.85-9.

Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis, Matney, K.; Goorsky, M.S., J. Cryst. Growth, vol.148, no.4, 1995. p.327-35.

Period deviations in distributed Bragg reflectors: X-ray diffraction and optical reflectivity measurements, Matney, K.; Goorsky, M.S.; Tartaglia, J.; Rai, R.; Parsons, C.,  in Proceedings of the Twenty-First International Symposium on Compound Semiconductors, edited by: Goronkin, H.; Mishra, U., (Bristol, UK: IOP Publishing, 1995). p.553-8.

Layer tilt and relaxation in InGaAs/GaAs graded buffer layers, Matney, K.M.; Eldredge, J.W.; Goorsky, M.S., in Strained Layer Epitaxy - Materials, Processing, and Device Applications, edited by: Fitzgerald, E.A.; Hoyt, J.; Cheng, K.-Y.; Bean, J. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.73-8.

Strain and mosaic spread of carbon and gallium co-implanted GaAs, Horng, S.T.; Goorsky, M.S.; Madok, J.H.; Haegel, N.M., J. Appl. Phys., vol.76, no.4 , 1994. p.2066-9.

Correlation of interface recombination and dislocation density at GaInP/GaAs heterojunctions, Mullenborn, M.; Matney, K.; Goorsky, M.S.; Haegel, N.M.; Vernon, S.M., J. Appl. Phys., vol.75, no.5 , 1994. p.2418-20.

Structural properties of highly mismatched InGaAs-based devices grown by molecular beam epitaxy on GaAs substrates, Goorsky, M.S.; Eldredge, J.W.; Lord, S.M.; Harris, J.S., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. , vol.12, no.2, 1994. p.1034-7.

The relationship between InGaAs channel layer thickness and device performance in high electron mobility transistors, Meshkinpour, M.; Goorsky, M.S.; Streit, D.C.; Block, T.; Wojtowicz, M.; Rammohan, K.; Rich, D.H. , in Compound Semiconductor Epitaxy Symposium, edited by: Tu, C.W.; Kolodziejski, L.A.; McCrary, V.R. (Pittsburgh, PA, USA: Mater. Res. Soc, 1994). p.327-32.

Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions, Goldman, R.S.; Rammohan, K.; Raisanen, A.; Goorsky, M.; Brillson, L.J.; Rich, D.H.; Wieder, H.H.; Kavanagh, K.L.,  Compound Semiconductor Epitaxy Symposium, edited by: Tu, C.W.; Kolodziejski, L.A.; McCrary, V.R. (Pittsburgh, PA, USA: Mater. Res. Soc, 1994). p.349-54.
 

GaN-Based Materials

Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire 0001, Feiler, D.; Williams, R.S.; Talin, A.A.; Yoon, H.; Goorsky, M.S., J. Cryst. Growth , vol.171, no.1-2,  1997. p.12-20.

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire, Hersee, S.D.; Ramer, J.; Zheng, K.; Kranenberg, C.; Malloy, K.; Banas, M.; Goorsky, M., J. Electron. Mater., vol.24, no.11, 1995. p.1519-23.
 

InP-Based Materials

Overgrowth of submicron-patterned surfaces for buried index contrast devices, Koontz, E.M.; Petrich, G.S.; Kolodziejski, L.A.; Goorsky, M.S. Semiconductor Science and Technology, vol.15, (no.4), IOP Publishing, April 2000. p.R1-12.

Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, Goorsky, M.S.; Sandhu, R.; Hsing, R.; Naidenkova, M.; Wojtowicz, M.; Chin, T.P.; Block, T.R.; Streit, D.C. Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol.18, (no.3), (18th North American Conference on Molecular Beam Epitaxy, Banff, Alta., Canada, 10-13 Oct. 1999.) AIP for American Vacuum Soc, May 2000. p.1658-62.

Diffraction and topography measurements of InP and InP-based heterostructure devices, Goorsky, M.S.,  in Physics of Semiconductor Devices, vol.1, edited by: Kumar, V.; Agarwal, S.K., (Delhi, India: Narosa Publishing House, 1998). p.236-43.

Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned InP gratings, U'Ren, G.D.; Goorsky, M.S.; Koontz, E.M.; Lim, M.H.; Petrich, G.S.; Kolodziejski, L.A.; Wong, V.V.; Smith, H.I.; Matney, K.M.; Wormington, M., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol.16, no.3, 1998. p.1381-4.

Preservation of rectangular-patterned InP gratings overgrown by gas source molecular beam epitaxy, Koontz, E.M.; Lim, M.H.; Wong, V.V.; Petrich, G.S.; Kolodziejski, L.A.; Smith, H.I.; Matney, K.M.; U'Ren, G.D.; Goorsky, M.S., Appl. Phys. Lett., vol.71, no.10, 1997. p.1400-2.

Substrate crystallinity and the performance of InP-based pseudomorphic high electron mobility transistors, Goorsky, M.S.; Sandhu, R.; Bhasin, G.; Moore, C.D.; Streit, D.G.; Block, T.R.; Wojtowicz, M., Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Cat. No.97CH36058, (New York, NY, USA: IEEE, 1997). p.264-7.

Overgrowth of InGaAsP materials on rectangular-patterned gratings using GSMBE, Koontz, E.M.; Lim, M.H.; Wong, V.V.; Petrich, G.S.; Kolodziejski, L.A.; Smith, H.I.; Goorsky, M.S.; Matney, K.M., Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials Cat. No.97CH36058, (New York, NY, USA: IEEE, 1997). p.62-5.
 

Si Materials

Surface and Bulk Characterization of Thermally Induced Defects during Silicon Single Wafer Epitaxy, Petra Feichtinger, Mark S. Goorsky, Frank Muemmler, Steve Rickborn, Quynh Tran, Dwain Oster and Jim Morel, submitted for publication in J. of Crystal Growth (2001).

Misfit Dislocation Nucleation Study in P/P+ Silicon, P. Feichtinger, M.S. Goorsky, D. Oster, T. D'Silva, and J. Moreland, accepted for publication in J. Electrochem. Soc.(2001)

Misfit Dislocation Interactions in Low Mismatch P/P+ Silicon, Petra Feichtinger, Benjamin Poust, Mark .S. Goorsky, Dwain Oster, Juanita Chambers, and Jim Moreland, accepted for publication in J.of Physics D (2001)

Misfit dislocation nucleation study in p/p+ silicon, Petra Feichtinger, Mark S. Goorsky, Dwain Oster, Tom D'Silva, and Jim Moreland, in High Purity Silicon VI, C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H.J. Dawson, Editors, p.136 The Electrochemical Society, Pennington, NJ (2000).

Ion implantation effect on dislocation propagation in pseudomorphically strained p/p+ silicon, Petra Feichtinger, Ben Poust, Hiroaki Fukuto, Rajinder Sandhu, Mark S. Goorsky, Dwain Oster, Steve F. Rickborn, and Jim Moreland, accepted for publication in Si Front-End Processiing-Physics and Technology of Dopant-Defect Interactions II, A. Agarwal, L. Pelaz, H.-H. Vuong, P.A. Packan, and M. Kase, Editors, Materials Research Society, Pittsburgh NJ 2000.

Ion implantation and misfit dislocation formation in p/p+ silicon, Petra Feichtinger, Hiroaki Fukuto, Rajinder Sandhu, Benjamin Poust, and Mark S. Goorsky, accepted for publication in Thin Films-Stresses and Mechanical Properties VIII, R. Vinci, P. Besser, O. Kraft, N. Moody, and E. Shaffer, Editors, p.37 Materials Research Society, Pittsburgh NJ 1999.

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures, M. S. Goorsky, P. Feichtinger, H. Fukuto, and G. U'Ren, Phil. Trans. R. Soc. Lond. A 357, 2777 (1999).

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy, H. Fukuto, P. Feichtinger, G. D. U'Ren, S. Lindo, M. S. Goorsky, T. Magee, D. Oster, and J. Moreland, J. Crystal Growth 209, 716 (2000).

Structural defects in p/p+ silicon vapor phase epitaxy, H. Fukuto, P. Feichtinger, M.S. Goorsky, T. Magee, D. Oster, and J. Moreland, in Defects in Silicon III, T. Abe, W.M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, p. 162, The Electrochemical Society, Pennington, NJ (1999).

X-ray Topograhpy and diffraction studies of misfit dislocation nucleation in Si-based structures, Goorsky, M. S.; Feichtinger, P.; Fukuto, H.; U'Ren, G. D., accepted in Phil. Trans., 1999.

Reduction of the bulk absorption coefficient in silicon optics for high-energy lasers through defect engineering, Goodman, W.A.; Goorsky, M.S., Appl. Opt., vol.34, no.18 , 1995. p.3367-73.

Characterization of the damage on the back side of silicon wafers. Defect and Impurity Engineered Semiconductors and Devices, Lindo, S.E.; Matney, K.M.; Goorsky, M.S., edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L. Symposium, Defect and Impurity Engineered Semiconductors and Devices. (Pittsburgh, PA, USA: Mater. Res. Soc., 1995). p.315-20.

A systematic study of the structural and luminescence properties of p-type porous silicon, Yoon, H.; Goorsky, M.S. edited by: Ashok, S.; Chevallier, J.; Akasaki, I.; Johnson, N.M.; Sopori, B.L., Symposium, Defect and Impurity Engineered Semiconductors and Devices. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.893-8.

Material properties assessment for large diameter single-crystal silicon, Goodman, W.A.; Goorsky, M.S., Proc. SPIE - Int. Soc. Opt. Eng., vol.2543, Silicon Carbide Materials for Optics and Precision Structures, 1995. p.73-88.
 

SiGe Materials

High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate, Huang, F.Y.; Chu, M.A.; Tanner, M.O.; Wang, K.L.; U'Ren, G.D.; Goorsky, M.S. Appl. Phys. Lett., vol.76, (no.19), AIP, 8 May 2000. p.2680-2.

Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-xGe xSi(100) grown by gas-source molecular beam epitaxy, U'Ren, G.D.; Goorsky, M.S.; Wang, K.L. Thin Solid Films, vol.365, (no.1), Elsevier, 3 April 2000. p.147-50.

Thermal conductivity of Si/Ge superlattices, Borca-Tasciuc, T.; Weili Liu; Jianlin Liu; Taofang Zeng; Song, D.W.; Moore, C.D.; Gang Chen; Wang, K.L.; Goorsky, M.S.; Radetic, T.; Gronsky, R.; Xiangzhong Sun; Dresselhaus, M.S. 18 Int. Conf. on Thermoelectrics. Proceedings, ICT'99, Baltimore, MD, USA, 29 Aug.-2 Sept. 1999.) Piscataway, NJ, USA: IEEE, 1999. p.201-4. xix+736 pp.

Photoluminescence and X-ray characterization of relaxed Si/sub1-x/Ge/sub x/ alloys grown on silicon on insulator SOI and implanted SOI substrates, Chu, M.A.; Tanner, M.O.; Huang, F.; Wang, K.L.; Chu, G.G.;Goorsky, M.S., J. Cryst. Growth, vol.175-1762, 1997. p.1278-83.

Sidewall faceting and inter-facet mass transport in selectively grown epitaxial layers on SiO/sub 2/-masked Si 110 substrates, Qi Xiang; Li Shaozhong; Wang Dawen; Sakamoto, K.; Wang,K.L.; U'Ren, G.; Goorsky, M., J. Cryst. Growth Netherlands , vol.175-176, pt.1, 1997. p.469-72.

Influence of substrate off-cut on the defect structure in relaxed graded Si-Ge/Si layers, Samavedam, S.; Romanato, F.; Goorsky, M.S.; Fitzgerald, E.A. edited by: Michel, J.; Kennedy, T.; Wada, K.; Thonke, K., Defects in Electronic Materials II., (Mater. Res. Soc, 1997). p.343-8.

Asymmetric mosaic spread during relaxation in SiGe/Si strained layer superlattices grown on miscut substrates, Nam, S.; Goorsky, M.S. in Strained Layer Epitaxy - Materials, Processing, and Device Applications, edited by: Fitzgerald, E.A.; Hoyt, J.; Cheng, K.-Y.; Bean, J. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.39-44.

Relaxed Si/sub 1-x/Ge/sub x/ films with reduced dislocation densities grown by molecular beam epitaxy, Tanner, M.O.; Chu, M.A.; Wang, K.L.; Meshkinpour, M.; Goorsky, M.S., J. Cryst. Growth, vol.157, no.1-4, 1995. p.121-5.
 

X-ray Diffraction Techniques

Overgrowth of submicron-patterned surfaces for buried index contrast devices, Koontz, E.M.; Petrich, G.S.; Kolodziejski, L.A.; Goorsky, M.S. Semiconductor Science and Technology, vol.15, (no.4), IOP Publishing, April 2000. p.R1-12.

Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures, J. Leininger, G.D. U'Ren, C.D. Moore, R. Sandhu, and M.S. Goorsky, J. Phys. D, vol. 32, no. 10A, 1999. p.A8-A11.

Diffraction and topography measurements of InP and InP-based heterostructure devices, Goorsky, M.S.,  in Physics of Semiconductor Devices, vol.1, edited by: Kumar, V.; Agarwal, S.K., (Delhi, India: Narosa Publishing House, 1998). p.236-43.

Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned InP gratings, U'Ren, G.D.; Goorsky, M.S.; Koontz, E.M.; Lim, M.H.; Petrich, G.S.; Kolodziejski, L.A.; Wong, V.V.; Smith, H.I.; Matney, K.M.; Wormington, M., J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol.16, no.3, 1998. p.1381-4.

Autostoichiometric vapor deposition. III. A study of stoichiometry and characterization of epitaxial LiTaO/sub 3/ layer, Chour, K.W.; Zhang, R.C.; Goorsky, M.S.; Takada, T.; Akiba, E.; Kumagai, T.; Kawaguchi, K.; Jensen, M.L.; Eaves, C.; Xu, R., J. Cryst. Growth, vol.183, no.1-2 , 1998. p.217-26.

Characterization of ternary substrate materials using triple axis X-ray diffraction, Yoon, H.; Lindo, S.E.; Goorsky, M.S., J. Cryst. Growth , vol.174, no.1-4, 1997. p.775-82.

Reciprocal space mapping for semiconductor substrates and device heterostructures, Goorsky, M.S.; Matney, K.M.; Meshkinpour, M.; Streit, D.C., Block, T.R., Nuovo Cimento D , vol.19D, no.2-4, 1997. p.257-66.

High resolution X-ray diffraction analysis of GaN-based heterostructures grown by OMVPE, Goorsky, M.S.; Polyakov, A.Y.; Skowronski, M.; Shin, M.; Greve, D.W.  III-V Nitrides. in Symposium, III-V Nitrides, edited by: Ponce, F.A.; Moustakas, T.D.; Akasaki, I.; Monemar, B.A., (Mater. Res. Soc, 1997). p.489-94.

Photoluminescence and X-ray characterization of relaxed Si/sub1-x/Ge/sub x/ alloys grown on silicon on insulator SOI and implanted SOI substrates, Chu, M.A.; Tanner, M.O.; Huang, F.; Wang, K.L.; Chu, G.G.;Goorsky, M.S., J. Cryst. Growth, vol.175-1762, 1997. p.1278-83.

Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures, Goorsky, M.S.; Lindo, S.E.; Guha, S.; Haugen, G.M., J. Electron. Mater. , vol.25, no.2, 1996. p.235-8.

Characterization of TaSi/sub 2/-Si composites for use as wide-bandpass optical elements for synchrotron radiation, Stock, S.R.; Rek, Z.U.; Goorsky, M.S., J. Appl. Phys. USA , vol.79, no.9, 1996. p.6803-10.

X-ray diffuse scattering for evaluation of wide bandgap semiconductor nuclear radiation detectors, Goorsky, M.S.; Yoon, H.; Schieber, M.; James, R.B.; McGregor, D.S.; Natarajan, M., Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol.380, no.1-2 , Room Temperature Semiconductor X- and -Ray Detectors, Associated Electronics and Applications, 1996. p.6-9.

Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces, Goorsky, M.S.; Meshkinpour, M.; Streit, D.C.; Block, T.R., J. Phys. D, Appl. Phys., vol.28, no.4A, 1995. p.A92-6.

Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis, Matney, K.; Goorsky, M.S., J. Cryst. Growth, vol.148, no.4, 1995. p.327-35.

Period deviations in distributed Bragg reflectors: X-ray diffraction and optical reflectivity measurements, Matney, K.; Goorsky, M.S.; Tartaglia, J.; Rai, R.; Parsons, C.,  in Proceedings of the Twenty-First International Symposium on Compound Semiconductors, edited by: Goronkin, H.; Mishra, U., (Bristol, UK: IOP Publishing, 1995). p.553-8.

Layer tilt and relaxation in InGaAs/GaAs graded buffer layers, Matney, K.M.; Eldredge, J.W.; Goorsky, M.S., in Strained Layer Epitaxy - Materials, Processing, and Device Applications, edited by: Fitzgerald, E.A.; Hoyt, J.; Cheng, K.-Y.; Bean, J. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.73-8.

A new approach for determining epilayer strain relaxation and composition through high resolution X-ray diffraction, Matney, K.M.; Goorsky, M.S. in Strained Layer Epitaxy - Materials, Processing, and Device Applications, edited by: Fitzgerald, E.A.; Hoyt, J.; Cheng, K.-Y.; Bean, J. (Pittsburgh, PA, USA: Mater. Res. Soc, 1995). p.257-62.

Characterization of buried pseudomorphic InGaAs layers using high-resolution X-ray diffraction, Meshkinpour, M.; Goorsky, M.S.; Matney, K.M.; Streit, D.C.; Block, T.R., J. Appl. Phys., vol.76, no.6 , 1994. p.3362-6.

High resolution triple axis diffractometry in indium-carbon and gallium-carbon co-implanted gallium arsenide, Horng, S.T.; Madok, J.H.; Haegel, N.M.; Goorsky, M.S., , in Materials Synthesis and Processing Using Ion Beams, edited by: Culbertson, R.J.; Holland, O.W.; Jones, K.S.; Maex, K. (Pittsburgh, PA, USA: Mater. Res. Soc, 1994). p.655-60.
 

 
     
last updated:  6/01