Scanning Tunneling Microscopy of III-V Compound Semiconductor Surfaces

 

 

 

     In our facility, we have a Park Scientific scanning tunneling microscope/ atomic force microscope.  We have investigated the surface structures of many III-V compound semiconductors produced in the MOCVD reactor.  Some of the results are highlighted below.

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Gallium arsenide (GaAs)

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Indium arsenide (InAs) and Indium gallium arsenide (InGaAs)

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Indium phosphide (InP) 

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Arsenic-phosphorous exchange on indium phosphide (InP) 

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Indium phosphide (111)A

 

 

Copyright 1996-2007, R. F. Hicks, Semiconductor Material Chemistry and Plasma Processing Laboratory, University of California, Los Angeles.

For information, please contact Professor Robert F. Hicks
Last Modified May 21, 2007 05:58 PM