INVITED TALKS

1. Chang, J. P., Sawin H. H. “Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon,” Seminar in Micro Process Department, Fujitsu Limited, Kawasaki, Japan, December, 1996.

2. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Bell Labs, Lucent Technologies, Murray Hill, NJ, February 1997.

3. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Applied Materials, San Jose, CA, February 1997.

4. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Motorola, Phoenix, AZ, March 1997.

5. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Motorola, Austin, TX, March 1997.

6. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Los Alamos National Lab, Albuquerque, NM, March 1997.

7. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Department of Chemistry, Harvard University, Cambridge, MA, April 1997.

8. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Procter & Gamble, Rome, Italy, June 1997.

9. Chang, J. P., Sawin H. H. “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” 44th AVS National Symposium, San Jose, CA. October 1997.

10. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of photoresist, polysilicon and silicon dioxide,” Department of Chemical Engineering, UCLA, Los Angeles, CA, November 1997.

11. J. P. Chang, “Beam scattering studies of plasma-surface interactions in chlorine etching of patterned polysilicon,” Department of Chemical Engineering, University of Illinois, Urbana-Champaign, IL, January1998.

12. J. P. Chang, “Simulation of profile evolution in etching patterned polysilicon,” Department of Chemical Engineering, University of Colorado, Boulder, CO, February 1998.

13. J. P. Chang, “Beam scattering studies and simulation of profile evolution in etching patterned polysilicon,” Department of Chemical Engineering, Rensselaer Polytechnic Institute, Albany, NY, February 1998.

14. J. P. Chang, “Beam scattering studies and simulation of profile evolution in etching patterned polysilicon,” Department of Chemical Engineering, Stanford University, San Francisco, CA, March 1998.

15. Chang, J. P. “Characterization of Ultra-thin Silicon Oxynitride with Angle Resolved X-ray Photoelectron Spectroscopy,” 1999 International Conference on “Next Generation Materials and Devices for Si-based Electronics,” Shanghai, China, May 1999.

16. Chang, J. P., “Challenges and Opportunities in Semiconductor Manufacturing,” Department of Chemical Engineering, California State Polytechnic University, Pomona, February, 2000

17. Chang, J. P., “Ultra-thin Gate Dielectrics for CMOS Applications”, the 36th Annual Symposium on Emerging Technologies 2000 of the New Mexico Chapter of the American Vacuum Society, Albuquerque, NM, May 2000

18. Chang, J. P., “Materials and Processing Challenges for the Next Generation Microelectronics”, Taiwan Semiconductor Manufacturing Company, Hsin-Hsu, Taiwan, June 2000

19. Chang, J. P., “Ultra-thin Metal Oxides as New Dielectrics in Microelectronics Fabrication”, AIChE China-USA Joint Conference, Beijing, China, September 2000

20. Chang, J. P., “Ultra-thin Metal Oxides as New Dielectrics in Microelectronics Fabrication”, Department of Chemical Engineering, Hsinhua University, Beijing, China, September 2000

21. Chang, J. P, “Ultra-thin Zirconium Oxide films Deposited by Rapid Thermal Chemical Vapor Deposition for MOSFET Applications”, Axcelis Technologies (SEO, Eaton Corp.), Thermal Processing Systems, Peabody, MA October 2000

22. J. P. Chang, “Engineering New Dielectric Materials for the Next Generation Microelectronics Fabrication”, Department of Chemical Engineering, University of California, Davis, CA, November 2000

23. J. P. Chang, “Engineering New Dielectric Materials for the Next Generation Microelectronics Fabrication”, Department of Chemical Engineering, University of California, San Diego, CA, November 2000

24. Chang, J. P., “Ultra-thin Zirconium Oxide Films as Alternative Gate Dielectrics”, 2nd International Conference on Microelectronics and Interfaces, Santa Clara, CA, February 2001

25. Chang, J. P., “Inorganic Membranes: Applications and Challenges”, Chinese American Chemical Society, 125th Annual Meeting of American Chemical Society, San Diego, CA, April 2001

26. Chang, J. P., “Lecture Series New Materials and Chemical Processes for Nano-electronics”, Engineering Alumni Association - Lecture Series, UCLA, April, 2001

27. Chang, J. P., “ Ultra-Thin Zirconium Oxide Films Deposited as Alternative Gate Dielectric”, NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Teleconference, May 10, 2001

28. Chang, J. P., “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics”, Motorola, Austin, TX, May 2001

29. Chang, J. P., “High-k MOCVD Deposition”, Gate Stack Working Group meetings, Austin, TX, May 2001

30. Chang, J. P., “High-k MOCVD Deposition”, AMD, Sunnyvale, CA, June 2001

31. Chang, J. P., “Integration of High-k Dielectrics: Deposition and Etching”, Applied Materials, Sunnyvale, CA June, 2001

32. Chang, J. P., “Integration of High-k Dielectrics: Deposition and Etching”, Mattson Technologies, Fremont, CA June, 2001

33. Chang, J. P., “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics”, NIST, July 2001

34. Chang, J. P., “High-k dielectrics and their charge conduction mechanisms”, Sandia National Laboratory, Albuquerque, NM, July 2001

35. Chang, J. P., “New Materials and Chemical Processes for Nano-electronics”, Uppsala University, Uppsala, Sweden, August, 2001

36. Chang, J. P., “New Materials and Chemical Processes for Nano-electronics”, Institut Romand De Recherche Numerique En Physique Des Materiaux (IRRMA), Lausanne, Switzerland, August, 2001

37. Chang, J. P., “New Materials and Chemical Processes for Nano-electronics”, IMEC, Leuven, Belgium, August, 2001

38. J. P. Chang, “Advanced Gate Dielectrics and Pre-gate Deposition Surface Treatments”, Mattson Technology, Inc., Fremont, CA, December, 2001

39. Chang, J. P., “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics”, Lam Research, Fremont, CA, December 2001

40. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” 3rd International Conference on Microelectronics and Interfaces, Santa Clara, CA, February 2002

41. J. P. Chang, “Tailoring the High-k Gate Dielectric/Silicon Interface for CMOS Applications,” Department of Materials Science, UCLA, Los Angeles, CA, February 2002.

42. J. P. Chang, “Tailoring the High-k Gate Dielectric/Silicon Interface for CMOS Applications,” Intel, Santa Clara, CA, April 2002.

43. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Chemistry Department, UCLA, Los Angeles, CA, April, 2002.

44. J. P. Chang, “Tailoring the High-k Gate Dielectric/Silicon Interface for Nanoelectronics Applications,” LSI Logic, Santa Clara, CA, May 2002.

45. J. P. Chang, “Tailoring the High-k Gate Dielectric/Silicon Interface for Nanoelectronics Applications,” Department of Chemical Engineering, UC Riverside, Riverside, CA, May 2002.

46. J. P. Chang, “Challenges and Opportunities in Semiconductor Manufacturing,” Mayfield Senior School, Pasadena, CA, May 2002.

47. J. P. Chang, “Tailoring the High-k Gate Dielectric/Silicon Interface for MOSFET Application,” AVS Thin Film Users’ Group Meeting, Sunnyvale, CA, May 2002.

48. J. P. Chang, Discussion Leader for the session entitled "Plasmas for Removing Materials from Surfaces: Etching Sputtering and Surface Modification", Gordon Conference (GRC) on Plasma Processing Science, July, Tilton, New Hampshire, 2002.

49. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” AVS Topical Conference on Atomic Layer Deposition 2002 (ALD 2002), August 19-21, Hanyang University, Seoul, Korea, August 2002.

50. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Department of Chemical Engineering, Seoul National University, Seoul, Korea, August 2002.

51. J. P. Chang, “Micro-Chemical-Sensors for Chemical Identification and Detection,” MEMS Institute, School of Engineering, National Tsing Hua University, Hsin-Chu, Taiwan, August 2002.

52. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Chemistry Department, Harvard, Cambridge, MA, September 2002.

53. J. P. Chang, “Advanced Gate Dielectrics and Pre-gate Deposition Surface Treatments”, Mattson Technology, Inc., Fremont, CA, November, 2002

54. J. P. Chang, “Advanced Gate Dielectrics and Pre-gate Deposition Surface Treatments”, LSI Logic, Milpitas, CA, November, 2002

55. J. P. Chang, Panel Discussion Leader on “high k Gate Brainstorming” Session, IEDM meeting, sponsored by Applied Materials, San Francisco, CA, December 2002.

56. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” The Aerospace Corporation, El Segundo, CA, January 2003.

57. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Chemical Engineering Department, Stanford University, Stanford, CA, February 2003.

58. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Chemical Engineering Department, Colorado University, Boulder, CO, March 2003.

59. J. P. Chang, Short Course on “Principles of plasma processing and plasma induced damage”, 8th International Symposium on Plasma and Process Induced Damage (P2ID), Paris, France (2003).

60. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” French National Center for Scientific Research, LTM/CNRS, Grenoble, France, April 2003.

61. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” STMicroelectronics, Grenoble, France, April 2003.

62. J. P. Chang, “Engineering high-k dielectric thin films on semiconductor surfaces”, ONR Workshop on Epitaxial Heterogeneous Interfaces – Formation & Stability, Fish Camp, CA, May 2003.

63. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Novellus Systems Inc., June 2003.

64 . J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” Applied Materials, June 2003.

65 . J. P. Chang, “Applications of plasma enhanced deposition and etching of high-k dielectrics”, The 4th International Symposium on Applied Plasma Science, September 1-5, Kyoto, Japan (2003).

66. J. P. Chang, “Etching and Thermal Stability of Zirconium and Hafnium Oxide High-k Dielectrics”, the 2nd International Symposium on High-K Materials, the 204th Electrochemical Society Meeting, Orlando, Florida, October 2003.

67. J. P. Chang, “Low energy ion-enhanced chemical etching of ALD high-k dielectric thin films on silicon,” AVS 50th International Conference, Baltimore, MD, November 2003.

68. J. P. Chang, “Etching and Thermal Stability of Zirconium and Hafnium Oxide High-k Dielectrics,” the 50th AVS International Symposium, Baltimore, MD, November 2003.

69. J. P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics,” the 5th Motorola Workshop on Computational Materials and Electronics, Austin, TX, November 2003.

70. J. P. Chang, “Plasma-Surface Interactions in Patterning High-k Dielectric Materials,” 2nd Annual UC Surface Science and Applications Symposium, San Diego, CA, February 2004.

71. J. P. Chang, “Plasma-Surface Interactions in Patterning High-k Dielectric Materials,” Lam Research, Fremont, CA, March 2004.

72. J. P. Chang, “Plasma-Surface Interactions in Patterning High-k Dielectric Materials,” NCCAVS Plasma Etch Users Group (PEUG) meeting, Santa Clara, CA, March 2004.

73. J. P. Chang, “Engineering high-k dielectric thin films on semiconductor surfaces”, ONR Workshop on Frontiers of Epitaxial Engineering, Sorrel River Ranch, UT, May 2004.

74. J. P. Chang, Discussion Leader for the session entitled "Nanotubes from plasmas at low and atmospheric pressure", Gordon Conference (GRC) on Plasma Processing Science, August, Plymouth, New Hampshire, 2004.

75. J. P. Chang, “Plasma-Surface Interactions in Patterning Nano-metered Structures,” SPIE Optics East Conference, October, 2004.

76. J. P. Chang, “Deposition and Patterning of High-k Dielectric Materials,” 26th International Symposium on Dry Process (DPS 2004), Tokyo, Japan, November 2004.

77. J. P. Chang, “Surface chemistry in synthesizing and patterning of high-k dielectric materials,” Gordon Research Conference on Chemical Reactions at Surfaces, Ventura, CA, February 2005.

78. J. P. Chang, “A Plasma Etching Perspective of Patterning High-k Dielectric Materials and Profile Evolution,” Cypress, San Jose, CA, December 2004.

79. J. P. Chang, “Feature Profile Evolution in Shallow Trench Isolation Etching”, Advanced Micro Devices, San Jose, CA, April 2005.

80. J. P. Chang, “A Plasma Etching Perspective of Patterning High-k Dielectric Materials and Profile Evolution,” Texas Instruments, Dallas, TX, April 2005.

81. J. P. Chang, “High-k Dielectrics on SiC”, the ONR Electronic Materials Program Review Meeting, Red Bank, NJ, August, 2005.

82. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications”, Department of Chemical Engineering, University of Wisconsin, WI, September, 2005.

83. J. P. Chang, “Synthesis of multifunctional oxide materials by atomic layer deposition”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

84. J. P. Chang, “Synthesis and Patterning of Multifunctional Oxides”, the 52nd AVS International Symposium, Boston, MA, October 2005.

85. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications”, Northrop Grumman Corporation, CA, August 2007.

86. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications”, Department of Chemical Engineering, University of Houston, TX, September, 2006.

87 .C. M. Tanner, J. Choi, J. P. Chang, “Experimental and First-Principles Studies of the Band Alignment at High-k Oxide / SiC Interfaces,” the 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 2006.

88. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications”, Department of Electrical Engineering, University of California, Riverside, February 2007.

89. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications”, Department of Chemical Engineering, University of Texas, TX, March 2007.

90. J. P. Chang, “Integrated Micro Sensors,” NSF Workshop on “Frontiers in Transport Phenomena Research and Education” Storrs, CT May 2007.

91. J. P. Chang, “Multifunctional oxide materials for microelectronic and optoelectronic applications,” ACS Fall Meeting, Boston, MA August 2007.

CONTRIBUTED PRESENTATIONS

1. Chang, J. P., Zhang, Z., Xu, H., Sawin, H. H., Butterbaugh, J. W. “Metal removal with a ClF3 beam at room temperature,” the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society, Pennington, NJ. September 1995.

2. Chang, J. P., Xu, H., Sawin, H. H. “Metal removal with a ClF3 beam at room temperature,” the 42nd National Symposium of the American Vacuum Society, The American Vacuum Society, Minneapolis, MN. October 1995.

3. Chang, J. P., Zhang, Z., Xu, H., Sawin H. H., Butterbaugh, J. W. “Dry cleaning of Cu, Ni and Fe from silicon and oxide surfaces at room temperature,” the Third International Symposium on Ultra Clean Processing of Silicon Surfaces, Antwerp, Belgium September 1996.

4. Chang, J. P., Sawin H. H. “Kinetic study of ion-enhanced plasma etching of polysilicon using Cl+ and Cl beams”, TECHCON ’96, Phoenix, AZ. September 1996.

5. Chang, J. P., Sawin H. H. “Kinetic study of ion-enhanced polysilicon etching using Cl, Cl2 and Cl+ beam scattering,” the 43rd National Symposium of the American Vacuum Society, The American Vacuum Society, Philadelphia, PA. October 1996. (Coburn/Winters Award)

6. Chang, J. P., Sawin H. H. “Plasma-surface kinetics and feature profile evolution in chlorine polysilicon etching”, the International workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfaces, Shirahama, Japan, January 1997.

7. Chang, J. P., Sawin H. H. “Beam scattering studies of plasma-surface interactions in chlorine etching of polysilicon,” American Institute of Chemical Engineers 1997 Annual Meeting, Los Angeles, CA. November, 1997.

8. Chang, J. P., Mahorowala, A. P., Sawin H. H. “Feature profile evolution in chlorine ion-enhanced etching of polysilicon,” American Institute of Chemical Engineers 1997 Annual Meeting, Los Angeles, CA. November, 1997.

9. Chang, J. P., Sawin H. H. “Study of plasma-surface kinetics and simulation of feature profile evolution in chlorine etching of patterned polysilicon,” Gordon Research Conference on Plasma Processing Science, Tilton, NJ August 1998.

10. Opila, R. L. Chang,, J. P., Du, M., Bevk, J., Ma Y. “X-ray photoelectron study of gate oxides and nitrides,” the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces, Antwerp, Belgium, September, 1998.

11. Opila, R. L. Chang,, J. P, Alers, G. B. “Characterization of thermal annealing of tantalum oxide for high-k dielectric applications,” the AVS 45th International Symposium, Baltimore, MD, November 1998.

12. Chang, J. P., Sawin H. H. “Notch formation by stress induced etching of polysilicon,” the AVS 45th International Symposium, Baltimore, MD, November 1998.

13. Chang, J. P., Green, M. L., Donnelly, V. M., Opila, R. L. “XPS characterization of nitrogen profile and chemical states in ultrathin silicon oxynitrides,” the AVS 45th International Symposium, Baltimore, MD, November 1998.

14. Chang, J. P., Krautter, H. W., Opila, R. L., Zhu, W., Pai, C. S. “Chemical and Thermal Stability of Fluorinated Amorphous Carbon Films for Interlayer Dielectric Applications”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

15. Ma, Y., Steiner, K. G., Carroll, M. S., Chen, Y., Brown, M. M., Li, F., Mason, P. W., Higashi, G. S., Chabal, Y. J., Opila, R. L,. Chang, J. P., Muller, D. A., Baumann, F. H., Silverman, P. J., Weir, B. E. “Manufacturable Ultra-thin Oxide/Nitride Gate Dielectric Formed with Thermal Oxidation and Plasma Enhanced Chemical Vapor Deposition”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

16. Chang, J. P., Steigerwald, M. L., Fleming, R. M., Opila, R. L., Alers, G. B. “Oxygen diffusion in Tantalum Oxide Metal-Oxide-Metal Capacitor Structures”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

17. Chang, J. P., Rosamilia, J. M., Sapjeta, J., Queeney, K. L., Chabal, Y. J., Sorsch T. W., Opila, R. L. “Preparing Ultra-clean Silicon Surfaces with Ultraviolet Stimulated Halogen Chemistry”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

18. Sapjeta, J., Chang, J. P., Green, M. L., Silverman, P. L., Sorsch, T. W., Weir, B. E., Gladden, W., Ma, Y., Lennard, W. N. “Relationship between interfacial roughness and dielectric reliability for silicon oxynitride gate dielectrics processed with nitric oxide”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

19. Alers, G. B., Stirling, L. A., Chang, J. P., VanDover, R. B., Werder, D. “Thermal stability of tantalum pentoxide gates on silicon and silicon nitride”, the Materials Research Society Spring 1999 Symposium, San Francisco, CA, April 1999.

20. Alers, G. B., Chang, J. P., Opila, R. L., Werder, D. J., Rajagopalan, R., and IIonescu-Zanetti, C. “Influence of the Metal/Oxide Interface on Electrical Properties of High-Density Tantalum Oxide Capacitors with all Metal Contacts”, 1999 Electrochemical Society Spring Meeting, Seattle, WA, May 1999.

21. Chang, J. P., Opila, R. L., Eng, J., Green, M. L. “X-ray photoelectron studies of Silicon Oxynitrides for Gate Applications,” 1999 Electrochemical Society Spring Meeting, Seattle, WA, May 1999.

22. Chang, J. P., Zhu, W., Pai, C. S., Bair, H., Krautter, H. W., Dennis, B., Pinczuk, A., Graebner, J., Cheung, K., Case, C., Liu, R. “Sputtered Fluorinated Amorphous Carbon - A Low Dielectric Constant Material”, ACS 218th American Chemical Society National Meeting, New Orleans, LA, August 1999.

23. Chang, J. P., Krautter, H. W., Opila, R. L., Zhu, W., Pai, C. S., Case, C. B., Sapjeta, J. and Decker, M. A., “Study of Metal/Barrier/low-k interfaces for Interlayer Dielectric Applications”, 1999 Electrochemical Society International Meeting, Honolulu, HI, October 1999.

24. Chang, J. P., Eng., J. Jr., Sapjeta, J., Opila, R. L., Cox, P., Pianetta, P. “Ultraviolet Light Stimulated Halogen Chemistry on Cleaning Silicon Surfaces”, 1999 Electrochemical Society International Meeting, Honolulu, HI, October 1999.

25. Chang, J. P., Sapjeta, J., Rosamilia, J. M., Boone, T., Eng., J. Jr., Opila, R. L., Brennan, S., Wiemer, C., Pianetta, P. “The effect of dilute cleaning and rinsing chemistries on transition metal removal and Si surface microroughness,” 1999 Electrochemical Society International Meeting, Honolulu, HI, October 1999.

26. Chang, J. P., Green, M. L., Opila, R. L., Eng, J. “Non-destructive Characterization of Nitrogen Profiles and Chemical States in Ultrathin Silicon Oxynitrides for ULSI Gate Application”, 1999 AIChE Annual Meeting, Dallas, TX, November 1999.

27. Chang, J. P., Steigerwald, M. L., Fleming, R. M., Opila, R. L., Alers, G. B. “Thermal and Electrical Characteristics of Tantalum Oxide in Metal-Oxide-Metal Capacitor Structures”, 1999 AIChE Annual Meeting Dallas, TX, November 1999.

28. Chang, J. P., “Curriculum innovation and integration in electronic materials processing and engineering”, International Conference on Engineering Education 2000, Taipei, Taiwan, August 2000.

29. Chang, J. P. and Cho, B., “Plasma Enhanced Chemical Vapor Deposition of Zirconium Oxide: Spectroscopic, Material and Device Characterization”, AVS 2000 Annual Meeting, Boston, MA, October 2000.

30. Chang, J. P., and Lin, Y., “Ultra-thin Zirconium Oxide films Deposited by Rapid Thermal Chemical Vapor Deposition for MOSFET Applications”, AVS 2000 Annual Meeting, Boston, MA October 2000.

31. Chang, J. P., “Emerging New Chemical Engineering Curriculum on Semiconductor Manufacturing”, AIChE 2000 Annual Meeting, Los Angeles, CA, November 2000.

32. Sha, L., L Cho, B., and Chang, J. P., “Material and Device Characteristics of Zirconium Oxides in MOS Capacitors”, AIChE 2000 Annual Meeting, Los Angeles, CA, November 2000.

33. Chang, J. P., Lin, Y. and Cho, B., “Ultra-thin Metal Oxides as Alternative Gate Dielectrics”, AIChE 2000 Annual Meeting, Los Angeles, CA, November 2000.

34. Cho, B., Sha, L., and Chang, J. P., “Spectroscopic Studies of Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) of Zirconium Oxide on Silicon”, AIChE 2000 Annual Meeting, Los Angeles, CA, November 2000.

35. Armaou, A. Antoniades, C., Christofides, P. D., and Chang, J. P., “Real-Time Control of a PECVD Reactor”, AIChE 2000 Annual Meeting, Los Angeles, CA, November 2000.

36. Chang, J. P., “Innovative curriculum on electronic materials processing and engineering”, Material Research Society, San Francisco, CA, April 2001.

37. Chang, J. P., K. Chu, M. L. Steigerwald, R. M. Fleming, R. L. Opila, D.V. Lang and C. D. W. Jones, “Electrical Characterization of Carbon-Doped Ta2O5 Films”, Material Research Society, San Francisco, CA, April 2001.

38. Chang, J. P., Y. Lin, S. C. Levy, R. S. Bloom, and A. Kepten, “ZrO2 for use as a gate dielectric materials – compositional, morphological, and electrical study”, Material Research Society, San Francisco, CA, April 2001.

39. Chang, J. P., Y. Lin “Ultra-Thin Zirconium Oxide Films Deposited by Rapid Thermal Chemical Vapor Deposition as Alternative Gate Dielectric”, Material Research Society, San Francisco, CA, April 2001.

40. Chang, J. P. and Y-S. Lin, “Integration Challenges of Ultra-Thin Zirconium Oxides as an Alternative Gate Dielectric”, Atomic Layer Deposition (ALD 2001) Conference, American Vacuum Society, Monterey, CA, May 2001.

41. Chang, J. P., “Practicing Engineering Principles at Micro to Nano Scales through Hands-On Laboratory Training”, International Conference on Engineering Education 2001, Oslo, Norway, August 2001.

42. Chang, J. P., “Redesigning the Chemical Engineering Curriculum for Challenges in the 21st Century”, International Conference on Engineering Education 2001, Oslo, Norway, August 2001.

43. Y. S. Lin, J. P. Chang, “High Dielectric Constant Material as an Alternative Gate Dielectric in MOSFET Applications,” The Leading Edge Student Symposium, Southern California Chapter AVS, Anaheim, CA, October 2001. (First Place Student Presentation Award)

44. L. Sha, J. P. Chang, “Plasma Etching of High Dielectric Constant Materials,” The Leading Edge Student Symposium, Southern California Chapter AVS, Anaheim, CA, October 2001.

45. Y. S. Lin, J. P. Chang, “High Dielectric Constant Material as an Alternative Gate Dielectric in MOSCAP and MOSFET Applications,” 48th AVS International Symposium, San Francisco, CA, October 2001.

46. B. O. Cho, J. Wang, S. X. Lao, J. P. Chang, “Material and Electrical Characteristics of ZrO2 Film Obtained by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD),” 48th AVS International Symposium, San Francisco, CA, October 2001.

47. L. Sha, J. P. Chang, “Plasma Etching of High Dielectric Constant Materials,” 48th AVS International Symposium, San Francisco, CA, October 2001.

48. B.O. Cho, J. Wang, S. X. Lao, J. P. Chang, “Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) of ZrO2 on Silicon,” 48th AVS International Symposium, San Francisco, CA, October 2001.

49. B. O. Cho, J. Wang, L. Sha, J. P. Chang, “A Mechanistic Study of Plasma Enhanced Chemical Vapor Deposition of High Dielectric Constant Materials,” AIChE 2001 Annual Meeting, Reno, NV, November 2001.

50. Y. S. Lin, J. P. Chang, “ZrO2 as an Alternative Gate Dielectric in MOSFET Application,” AIChE 2001 Annual Meeting, Reno, NV, November 2001.

51. L. Sha, J. P. Chang, “Kinetic Studies of Etching Metal Oxides in a High Density Cl2 Discharge,” AIChE 2001 Annual Meeting, Reno, NV, November 2001.

52. B.O. Cho, J.J. Wang, L. Sha, and J.P. Chang, “Tuning the Material and Electrical Characteristics of ZrO2 Films by Plasma Enhanced Vapor Deposition”, 3rd International Conference on Microelectronics and Interfaces, Santa Clara, CA, February 2002.

53. L. Sha and J.P. Chang, “Patterning High Dielectric Constant Materials for Microelectronic Application”, 3rd International Conference on Microelectronics and Interfaces, Santa Clara, CA, February 2002.

54. Y-S. Lin and J.P. Chang, “Thermal Stability and Dielectric Property of Stached High-k Dielectrics on Silicon”, Material Research Society, San Francisco, CA, April 2002.

55. B. O. Cho, J. J. Wang, and J. P. Chang, “Tuning the Material and Electrical Characteristics of ZrO2 Film Obtained by Plasma Enhanced Chemical Vapor Deposition”, Material Research Society, San Francisco, CA, April 2002.

56. D. Cruz, J. P. Chang, F. Gelbard and R. P. Manginell, “Geometrically Optimized Thermal Conductivity Detector for Chemical Sensing, AVS Topical Conference on "Understanding and Operating in Threat Environments", Monterey, CA, May, 2002.

57. D. Cruz, J. P. Chang, F. Gelbard, R. Manginell, S. Showalter, L. J. Sanchez, S. Sokolowski and M. Blain, “Micro thermal conductivity detector for chemical sensing”, NM AVS Regional Conference in Albuquerque, NM, May, 2002.

58. J. P. Chang, “A New Undergraduate Laboratory in Semiconductor Manufacturing,” American Society of Engineering Education (ASEE) Summer School for Chemical Engineering Faculty, Boulder, CO, July 2002.

59. Jane P. Chang, “Advanced Gate Dielectrics and Chemical Processes for Nano-electronics”, Annual Fall Symposium on Materials for the Next Information Age, Rochester Section of American Chemical Society, Eastman Kodak Company, October 2002. (Invited).

60. Jane P. Chang, “Micro-Chemical-Sensors for Chemical Identification and Detection,”, Xerox Corporation, Webster, NY, October 2002. (Invited).

61. L. Sha, J. P. Chang, “Plasma Etching of High Dielectric Constant Materials in Chlorine Discharge,” The Leading Edge Student Symposium, Southern California Chapter AVS, Anaheim, CA, October 2002.

62. R. Puthenkovilakam, Y. S. Lin, J. P. Chang, “Atomic and Electronic Structure of ZrO2/Si and ZrSixOy/Si Interfaces” The Leading Edge Student Symposium, Southern California Chapter AVS, Anaheim, CA, October 2002.

63. D. Cruz, J. P. Chang, F. Gelbard, R. Manginell, S. Showalter, L. J. Sanchez, S. Sokolowski and M. Blain, “Microfabricated thermal conductivity detector for the µChemLabTM System”, ACS Rocky Mountain Regional Meeting in Albuquerque, NM. October, 2002.

64. L. Sha, and J. P. Chang, “Ion-Enhanced Chemical Etching of ZrO2 in a Chlorine Discharge”, 49th AVS International Symposium, Denver, CO, November 2002. (Coburn/Winters Award)

65. Y.-S. Lin, R. Puthenkovilakam, and J. P. Chang “Hafnium Oxide as an Alternative Gate Dielectric in MOSCAP and MOSFET Application”, 49th AVS International Symposium, Denver, CO, November 2002.

66. B.-O. Cho, T. Va, and J. P. Chang, “Molecular Beam Deposition of Yttrium Oxide as a Host Material of Er Doping for an Optoelectronic Amplifier Application,” 49th AVS International Symposium, Denver, CO, November 2002.

67. B.-O. Cho and J. P. Chang, “The Correlations between Gas Phase Chemistry, Material Properties, and Device Characteristics of PECVD ZrO2 Thin Films,” 49th AVS International Symposium, Denver, CO, November 2002.

68. B.-O. Cho and J. P. Chang, “Tuning the Material and Electrical Characteristics of ZrO2 Film Obtained by Plasma Enhanced Chemical Vapor Deposition, 49th AVS International Symposium, Denver, CO, November 2002.

69. D. Cruz, J. P. Chang, F. Gelbard, R. P. Manginell, S. K. Showalter, L. J. Sanchez, S. S. Sokolowski, and M. G. Blain, “Micro-Thermal Conductivity Detector for Chemical Sensing”, 49th AVS International Symposium, Denver, CO, November 2002.

70. B.-O. Cho and J. P. Chang, “Tuning the Materials and Electrical Properties of High-k Dielectric by PECVD”, AIChE 2002 Annual Meeting, Indianapolis, IN, November 2002.

71. Y.-S. Lin and J. P. Chang, “Engineering High-k Dielectrics on Silicon for MOSFET Fabrication”, AIChE 2002 Annual Meeting, Indianapolis, IN, November 2002.

72. L. Sha and J. P. Chang, “Ion-Enhanced Etching of ZrO2 for MOSFET Application”, AIChE 2002 Annual Meeting, Indianapolis, IN, November 2002.

73. J. P. Chang, “New Curriculum and Courses in Training Chemical Engineers in Nanoelectronics Fabrication”, AIChE 2002 Annual Meeting, Indianapolis, IN, November 2002.

74. R. Puthenkovilakam, Y. S.Lin and J. P Chang, “Atomic and Electronic Structures of ZrO2/Si Interfaces”, 4th International Conference on Microelectronics and Interfaces, Santa Clara, CA, March 2003.

75. Y. S.Lin, R. Puthenkovilakam, and J. P Chang, “Hafnium Oxide Thin Film as an Alternative Gate Dielectric Material”, 4th International Conference on Microelectronics and Interfaces, Santa Clara, CA, March 2003.

76. Y. S. Lin, R. Puthenkovilakam, and J. P Chang, “Atomic Layer Deposition of High-k Dielectrics for Metal-oxide-semiconductor devices”, The 203rd Electrochemical Society Annual Meeting, Paris, France, April 2003.

77. L. Sha and J. P Chang, “Gas-phase and Surface Reactions in Plasma Enhanced Chemical Etching of High-k Dielectrics”, The 203rd Electrochemical Society Annual Meeting, Paris, France, April 2003.

78 . D. Cruz, J. P. Chang, and M. G. Blain, “Plasma Etching of Chromium, as a hard mask for a metal stack etch,” New Mexico Chapter AVS, Albuquerque, NM, May 2003. (First Place Student Presentation Award)

79 . R. Puthenkovilakam and J. P. Chang, “Electronic Structure of ZrO2/Si and ZrSiO4/Si Interfaces from First Principles, Physical Electronics Conference (PEC), Cornell, NY, June 2003.

80 . R. Puthenkovilakam and J. P. Chang, “Atomic structure and electronic properties of high-K/silicon interfaces,” AVS Topical Conference on Atomic Layer Deposition 2003 (ALD 2003), August 4-6, San Jose, CA.

81 . T. T. Van, B. O. Cho, and J. P. Chang, “Radical-enhanced atomic layer deposition of ultra-thin Y2O3 films,” AVS Topical Conference on Atomic Layer Deposition 2003 (ALD 2003), August 4-6, San Jose, CA.

82 . D. Cruz, J. P. Chang, and M. G. Blain, “Plasma Etching of Chromium, as a hard mask for a metal stack etch,” the 50th AVS International Symposium, Baltimore, MD, November 2003.

83 . R. Puthenkovilakam and J. P. Chang, “First Principles Studies of the Electronic and Atomic Structures of ZrO2/Si and ZrSiO4/Si Interfaces,” the 50th AVS International Symposium, Baltimore, MD, November 2003.

84 . Y. S. Lin, R. Puthenkovilakam, and J. P. Chang, “Synchrotron UPS and EXAFS Analysis of High-k and Si Interfaces,” the 50th AVS International Symposium, Baltimore, MD, November 2003.

85. L. Sha, and J. P. Chang, “Plasma Etching of High Dielectric Constant Materials on Silicon,” the 50th AVS International Symposium, Baltimore, MD, November 2003.

86 . S. Lao and J. P. Chang, “Plasma Enhance Atomic Layer Deposition for Compositionally Controlled Metal Oxide,” AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

87 . J. P. Chang, “Thin Integration of Microelectronics Education in the Chemical Engineering Curriculum,” AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

88 . R. Puthenkovilakam and J. P. Chang, “Electronic Structure of ZrO2/Si and ZrSiO4/Si Interfaces from First Principles,”, AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

89 . Y. S. Lin, R. Puthenkovilakam, and J. P. Chang, “Hafnium Oxide as an Alternative Gate Dielectric Material for MOS Devices,” AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

90 . J. P. Chang, P. D. Christofides, Y. Lou, D. Ni, L. Sha, and S. X. Lao, “Real-Time Control of High-k Dielectric Thin Film Composition and Thickness,”AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

91 . L. Sha, and J. P. Chang, “Plasma Etching of High Dielectric Constant Materials on Silicon,” AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

92. Ni, Dong, P.D. Christofides, S. Lao and J. P. Chang, “Real-Time Control of High-k Dielectric Thin Film Composition and Thickness”, AIChE 2003 Annual Meeting, San Francisco, CA, November 2003.

93. Ni, Dong, Y. Lou, P.D. Christofides, L. Sha, S. Lao and J. P. Chang, “A Method for Real-Time Control of Thin Film Composition Using OES and XPS,'' American Control Conference, Denver, Colorado, 2003.

94. T. T. Van and J. P. Chang, “Real-time kinetic studies of ?-diketonate precursors in atomic layer deposition of metal oxides”, 2nd Annual UC Surface Science and Applications Symposium, San Diego, CA, February 2004.

95. R. Puthenkovilakam and J. P. Chang, “Electronic properties and band alignments at the HfO2/Si and ZrO2/Si interfaces”, 2nd Annual UC Surface Science and Applications Symposium, San Diego, CA, February 2004.

96. D. L. Ramirez, L. Sha, and and J. P Chang, “Ion-Enhanced Chemical Etching of Metal Oxides in Cl2 and BCl3 Plasmas”, 5th International Conference on Microelectronics and Interfaces, Santa Clara, CA, March 2004.

97. S. X. Lao and J. P Chang, “Plasma Enhance Atomic Layer Deposition for Compositionally Controlled Metal Oxide Thin Films”, 5th International Conference on Microelectronics and Interfaces, Santa Clara, CA, March 2004.

98. T. T. Van and J.P. Chang, “Processing and Characterization of Erbium-doped Yttrium Oxide Thin Films”, Material Research Society, San Francisco, CA, April 2004.

99. T. T. Van and J.P. Chang, “Surface Chemistry of ?-diketonate Precursors in Metal Oxide Deposition”, Material Research Society, San Francisco, CA, April 2004.

100. R. Puthenkovilakam and J. P. Chang, “Controlling the metal-oxide-silicon interface: role of initial surface preparation and post deposition annealing”, Material Research Society, San Francisco, CA, April 2004.

101. R. Puthenkovilakam and J. P. Chang, “Electronic properties and band alignments at the metal-oxide-silicon interfaces”, Material Research Society, San Francisco, CA, April 2004.

102. D. Cruz, J. P. Chang, and M. G. Blain, “Plasma Design and Simulation of a Micromachined Cylindrical Ion Trap (CIT) Array,” New Mexico Chapter AVS, Albuquerque, NM, May 2004.

103. J. P. Campbell, P.M. Lenahan, R. Puthenkovilakam, and J. P. Chang, “Electron Spin Resonance study of atomic layer deposited HfO2 on (111) Silicon”, the Electronic Materials Conference (EMC), Notre Dame University, Notre Dame, Indiana, June 2004.

104. S. X. Lao, R. M. Martin, and J. P. Chang, “Plasma-enhanced atomic layer deposition for compositionally controlled metal oxide thin films,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

105. T. T. Van and J. P. Chang, “Radical-enhanced atomic layer deposition of pure and erbium-doped Y2O3 thin films,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

106. T. T. Van and J. P. Chang, “Quartz crystal microbalance and quadruple mass spectrometry studies of surface reactions of ?-diketonate precursors and O radicals,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

107. R. Puthenkovilakam and J. P. Chang, “Electronic properties and band alignments of Hf-based gate dielectrics on silicon,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

108. R. Puthenkovilakam and J. P. Chang, “Engineering the properties of Hf-based gate dielectrics: role of initial surface preparation and post deposition annealing,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

109. J. Choi, R. Puthenkovilakam, C. M. Tanner, and J. P. Chang, “Spectroscopic investigation of epitaxial dielectrics on SiC,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

110. D. Ramirez, Y. Ta, and J. P. Chang, “Ion-enhanced plasma etching of metal oxides in chlorine based plasmas,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

111. J. P. Chang, “SBIR Opportunities for University Research and Development,” the 2004 AIChE Annual Meeting, Austin, TX, November 2004.

112. S. X. Lao, R. M. Martin, and J. P. Chang, “Plasma-enhanced atomic layer deposition for compositionally controlled metal oxide thin films,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

113. T. T. Van and J. P. Chang, “Quartz crystal microbalance and quadruple mass spectrometry studies of surface reactions of ?-diketonate precursors and O radicals,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

114. T. T. Van and J. P. Chang, “Radical-enhanced atomic layer deposition of pure and erbium-doped Y2O3 thin films,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

115. R. Puthenkovilakam and J. P. Chang, “Electronic properties and band alignments of Hf-based gate dielectrics on silicon,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

116. R. Puthenkovilakam, Y.-S. Lin, and J. P. Chang, “Engineering the properties of Hf-based gate dielectrics: role of initial surface preparation and post deposition annealing,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

117. C. M. Tanner, J. Choi, and J. P. Chang, “In-situ characterization of HfO2 and AlN films on SiC ,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

118. J. Choi, R. Puthenkovilakam, C. M. Tanner, and J. P. Chang, “Spectroscopic investigation of epitaxial dielectrics on SiC,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

119. D. Ramirez, Y. Ta, and J. P. Chang, “Ion-enhanced plasma etching of metal oxides in chlorine based plasmas,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

120. D. Cruz, J. P. Chang, and M. G. Blain, “Field emission from a tungsten MEMS structure,” the 51st AVS International Symposium, Anaheim, CA, November 2004.

121. J. Choi, C. Tanner, R. Puthenkovilakam, and J. P. Chang, “Growth and spectroscopic characterization of epitaxial dielectrics on SiC”, APS March meeting, Los Angeles, CA, March 2005.

122. R. Puthenkovilakam, J. Choi, and J. P. Chang, “Electronic properties and band alignments of Hf-based gate dielectrics on silicon,” APS March meeting, Los Angeles, CA, March 2005.

123. C. M. Tanner, J. W. Choi, and J. P. Chang, “Material and Electrical Properties of HfO2 Thin Films on 4H-SiC.” 2005 Electronic Materials Conference, Santa Barbara, CA, June 2005.

124. M. Sawkar, J. W. Choi, R. Puthenkovilakam and J. P. Chang, “The Effect of Nitrogen Incorporation on the Material and Electrical Properties of HfO2 on Si,” 2005 Electronic Materials Conference, Santa Barbara, CA, June 2005.

125. C. M. Tanner, J. Choi, J. P. Chang “Structural and Morphological Properties of ALD HfO2 on 4H-SiC”, AVS Topical Conference on Atomic Layer Deposition, San Jose, CA August 2005.

126. T. T. Van, R. Ostroumov, J. Bargar, B. Morgan, K. L. Wang, J. P. Chang, “Controlled Doping in Ultra-thin Metal Oxide Films By Radical-Enhanced ALD”, AVS Topical Conference on Atomic Layer Deposition, San Jose, CA August 2005.

127. C. M. Tanner, J. W. Choi, and J. P. Chang, “Structural and Morphological Properties of Atomic Layer Deposited HfO2 on 4H-SiC,” 11th International Conference on Silicon Carbide and Related Materials, Pittsburg, PA, September, 2005.

128. C. M. Tanner, J. W. Choi, and J. P. Chang, “Experimental and First-Principles Studies of the Electronic Properties of HfO2 on 4H-SiC,” 11th International Conference on Silicon Carbide and Related Materials, Pittsburg, PA, September, 2005.

129. C. M. Tanner and J. P. Chang, “Growth of Epitaxial Al2O3 Thin Films on 4H-SiC,” 11th International Conference on Silicon Carbide and Related Materials, Pittsburg, PA, September, 2005.

130. J. W. Choi, R. Puthenkovilakam, and J. P. Chang, “First-principles study of hexagonal SiC,” 11th International Conference on Silicon Carbide and Related Materials, Pittsburg, PA, September, 2005.

131. J. W. Choi, R. Puthenkovilakam, and J. P. Chang, “Electronic structure and band alignment at the AlN/SiC interface,” 11th International Conference on Silicon Carbide and Related Materials, Pittsburg, PA, September, 2005.

132. P.M. Lenahan, J.T. Ryan, T.G. Pribicko, G. Bersuker, P. Lysaght, W. Tsai, S. Koveshnikov, J.C. Lee, S.J. Rhee, J. Chang, R. Puthenkovilakam, J.F. Conley, “Trapping Centers in HfO2 Based MOS Structures,” IEEE Workshop on Gate Dielectrics, Austin, TX, September, 2005.

133. J. Choi, R. Puthenkovilakam, C. M. Tanner and J. P. Chang, “Determination of band offsets at the AlN/SiC interface”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

134. C. M. Tanner, J. Choi, and J. P. Chang, “Material and electronic properties of ultra thin HfO2 films on 4H-SiC (0001)”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

135. T. T. Van, R. Ostroumov, J. Bargar, K. L. Wang, and J. P. Chang, “Erbium Incorporation in Y2O3 Thin Films by Radical-enhanced Atomic Layer Deposition,” the 208th ECS Meeting, Los Angeles, CA, October, 2005.

136. R. M. Martin, M. Sawkar, H.-O. Blom, and J. P. Chang, “Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasmas”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

137. J. Choi, R. Puthenkovilakam, and J. P. Chang, “Effect of Nitrogen on the Electronic Properties of Hafnium Oxynitrides”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

138. M. Sawkar, J. Choi, R. Puthenkovilakam and J. P. Chang, “The Effect of Nitrogen Incorporation on the Material and Electrical Properties of HfO2 on Si”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

139. R. M. Martin, K. Cross, M. Sawkar, S. X. Lao, and J. P. Chang, “Plasma-Enhanced Atomic Layer Deposition for Compositionally Controlled Metal Oxide Thin Films”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

140. J. Hoang and J. P. Chang, “Feature Profile Evolution in Chlorine Etching of Shallow Trench Isolation (STI) Structures”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

141. V. Jankovic and J. P. Chang, “FET-based microchemical pH sensor and electrowetting on dielectric (EWOD) microfluidic actuator multifunctional device using ultra-thin PEALD HfO2 films on p-Si”, the 208th ECS Meeting, Los Angeles, CA, October, 2005.

142. T. T. Van, J. Bargar, R. Ostroumov, K. L. Wang, and J. P. Chang, “Controlled doping and photoluminescence properties of Er-doped Y2O3 thin films,” SPIE Optics East Conference, Boston, October, 2005.

143. T. T. Van, J. Bargar, R. Ostroumov, K. L. Wang, and J. P. Chang, “Effect of local environments on the photoluminescence of Er3+ incorporated in ultra-thin Y2O3 films,” SPIE Optics East Conference, Boston, October, 2005.

144. D. Cruz, M. Fico, A. J. Guymon, R. G. Cooks, J. P. Chang, and M. G. Blain, “Ion trapping in microfabricated ion trap arrays”, the 52nd AVS International Symposium, Boston, MA, October 2005.

145. T. Van, J. Bargar, R. Ostroumov, K. L. Wang, J. P. Chang, “Controlled Doping and Photoluminescence Properties of Er-doped Y2O3 Thin Films”, the 52nd AVS International Symposium, Boston, MA, October 2005.

146. R. M. Martin, H.-O. Blom, and J. P. Chang, “Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasmas,” the 52nd AVS International Symposium, Boston, MA, October 2005.

147. M. Sawkar, J. Choi, R. Puthenkovilakam and J. P. Chang, “The Effect of Nitrogen Incorporation on the Material and Electrical Properties of HfO2 on Si”, the 52nd AVS International Symposium, Boston, MA, October 2005.

148. R. M. Martin, K. Cross, M. Sawkar, and J. P. Chang, “Plasma-Enhanced Atomic Layer Deposition for Compositionally Controlled Metal Oxide Thin Films,” the 52nd AVS International Symposium, Boston, MA, October 2005.

149. D. Cruz, M. Fico, A. J. Guymon, R. G. Cooks, J. P. Chang, and M. G. Blain, “Microfabricated ion trap array as a mass analyzer”, the 2005 AIChE Annual Meeting, Cincinnati, OH, October 2005.

150. T. Van, R. Ostroumov, J. Bargar, K. L. Wang, J. P. Chang, “Controlled Doping and Photoluminescence Properties of Er-doped Y2O3 Thin Films”, the 2005 AIChE Annual Meeting, Cincinnati, OH, October 2005.

151. R. M. Martin, H.-O. Blom, and J. P. Chang, “Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasmas,” the 2005 AIChE Annual Meeting, Cincinnati, OH, October 2005.

152. J. Choi, C. M. Tanner, and J. P. Chang, “First-Principles Studies of the Electronic Properties of HfO2 on SiC”, the 2005 AIChE Annual Meeting, Cincinnati, OH, October 2005.

153. W.M.M. Kessels, B. Hoex, I.M.P. Aarts, T.T. Van, J.P. Chang, H. Mertens, A. Polman, and M.C.M. van de Sanden, “Direct measurement of the Er3+ optical absorption cross-section in different oxide thin films,” MRS Spring Meeting, San Francisco, CA, April 2006.

154. C. M. Tanner, J. Choi, J. Lu, H.-O. Blom, J. P. Chang, “Evaluation of HfO2 Gate Dielectrics for 4H-SiC MOS Devices,” MRS Spring Meeting, San Francisco, CA, April 2006.

155. C. M. Tanner,  J. Lu, H.-O. Blom, J. P. Chang, “Epitaxial γ-Al2O3 Dielectrics for 4H-SiC MOS Devices,” MRS Spring Meeting, San Francisco, CA, April 2006.

156. T. T. Van, J. Hoang, and J. P. Chang, “Improved Photoluminescence Yield by Controlling Erbium Doping Level and Its Distribution in Y2O3 Thin Films,” MRS Spring Meeting, San Francisco, CA, April 2006.

157. C. M. Tanner, J. Lu, H.-O. Blom, J. P. Chang, “Characterization of Epitaxial γ-Al2O3 Dielectric Films on 4H-SiC,” the 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 2006.

158. C. M. Tanner, J. Lu, H.-O. Blom, J. P. Chang, “Evaluation of HfO2 Gate Dielectrics for 4H-SiC MOS Device,” the 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 2006.

159. C. M. Tanner, M. F. Toney, M. Sawkar-Mathur, J. Lu, H.-O. Blom, J. P. Chang, “Synchrotron X-Ray Scattering Analysis of Epitaxial γ-Al2O3 (111) Thin Films on 4H-SiC (0001)”, Stanford Synchrotron Radiation Laboratory Workshop, October 2006.

160. M. Sawkar-Mathur, and J. P. Chang, “EXAFS analysis of HfO2 thin films”, Stanford Synchrotron Radiation Laboratory Workshop, October 2006.

161. R. M. Martin and J. P. Chang, “Surface Reactions in Plasma Etching of  Nitrided Hafnium Silicates,” the 2006 AIChE Annual Meeting, San Francisco, CA November 2006.

162. M. Sawkar and J. P. Chang, “Material and Electrical Properties of HfRuN gate electrodes on HfO2,” the 2006 AIChE Annual Meeting, San Francisco, CA November 2006.

163. R. M. Martin, H.-O. Blöm and J. P. Chang, “Ion-Enhanced Plasma Etching of Hafnium Aluminates in Chlorine Based Plasmas,” the 2006 AIChE Annual Meeting, San Francisco, CA November 2006.

164. J. Hoang, T. T. Van, M. Sawkar, J. Bargar and J. P. Chang, “Spatially Controlled Nano-Scale Doping by Atomic Layer Deposition,” the 2006 AIChE Annual Meeting, San Francisco, CA November 2006.

165. C. M. Tanner and J. P. Chang, “Growth of Epitaxial -Al2O3 Films on 4H-SiC,” the 2006 AIChE Annual Meeting, San Francisco, CA November 2006

166. R. M. Martin and J. P. Chang, “Surface Reactions in Plasma Etching of  Nitrided Hafnium Silicates,” the 52nd AVS International Symposium, San Francisco, CA November 2006.

167. M. Sawkar and J. P. Chang, “Material and Electrical Properties of HfRuN gate electrodes on HfO2,” the 52nd AVS International Symposium, San Francisco, CA November 2006.

168. R. M. Martin, H.-O. Blöm and J. P. Chang, “Ion-Enhanced Plasma Etching of Hafnium Aluminates in Chlorine Based Plasmas,” the 52nd AVS International Symposium, San Francisco, CA November 2006.

169. J. Hoang, T. T. Van, M. Sawkar, J. Bargar and J. P. Chang, “Spatially Controlled Nano-Scale Doping by Atomic Layer Deposition,” the 52nd AVS International Symposium,, San Francisco, CA November 2006.

170. C. M. Tanner and J. P. Chang, “Growth of Epitaxial -Al2O3 Films on 4H-SiC,” the 52nd AVS International Symposium, San Francisco, CA November 2006.

171. Y. Mao, J. Bargar, and J. P. Chang, “Er-doped Y2O3 Nanostructures”, ACS Spring Meeting, Chicago, IL March 2007.

172. M. Sawkar-Mathur and J. P. Chang, “Material and Electrical Properties of HfRuN gate electrodes on HfO2” MRS Spring Meeting, San Francisco, CA April 2007.

173. M. Sawkar-Mathur and J. P. Chang, “Structural Properties and Electrical Performance of La2Hf2O7 on Si”, MRS Spring Meeting, San Francisco, CA April 2007.

174. C. M. Tanner, J. Lu, H.-O. Blom, M. F. Toney, M. Sawkar-Mathur, J. P. Chang, “Engineering of Epitaxial γ-Al2O3 (111) Gate Dielectrics on 4H-SiC (0001)”, MRS Spring Meeting, San Francisco, CA April 2007.  (MRS Graduate Student Silver Award)

175. Y. Mao and . P. Chang, “Optical Characterization of Er-doped Y2O3 Nanostructures”, MRS Spring Meeting, San Francisco, CA April 2007.

176. C. M. Tanner, M. F. Toney,  J. Lu, H.-O. Blom, M. Sawkar-Mathur, M. A. Tafesse, and J. P. Chang, “Structural Properties of Epitaxial γ-Al2O3 Thin Films on 4H-SiC,” AVS ALD Topical Conference, San Diego, CA June 2007.

177. Y. Mao and J. P. Chang, “Rare Earth Doped Yttria for Optical Amplifier Application”, ACS Fall Meeting, Boston, MA August 2007.