Electronic Materials Synthesis and Plasma Processing Lab

Chang Lab - Research

 

Multi-functional materials – synthesis

Atomic layer deposition (ALD) uses self-limiting reaction sequences to deposit atomic layer controlled thin films, ideal for tailoring the composition and microstructure of multi-functional materials for various applications. 

     

 

Multi-functional materials – patterning

Plasma etching is the enabling technology that patterns thin film materials into high fidelity and specific structures for large scale integration. Atomic layer etching can be realized through the understanding and balance of specific surface reactions between ions and radicals.  

     

 

3-D micro-batteries and energy storage

To rationally design an effective electrolyte material with a large contact area to the electrodes in miniaturized energy storage devices, ALD is used to synthesize metal oxide based electrolyte materials and understand the impact of structural properties on the attainable  ionic conductivity.

     

 

Ferroelectric and wide band gap materials

Multifunctional dielectric thin films are engineered and integrated on wide band gap semiconductors by ALD processing to enhance the functionalities of power electronics and radio frequency (RF) integrated circuits. 

     

 

Core-shell nano phosphors for white light and solar cells

Core-shell rare-earth ion (RE) doped phosphors with spatially controlled dopants allow for the conversion of photons that are outside of the desired wavelengths into usable ranges for many applications such as in photovoltaics and for white light generation.

 

     

 

Multi-ferroic materials

Complex metal oxide materials, both intrinsic and engineered multiferroic materials are being synthesized by ALD processing for their applications in advanced memory devices and spintronics.

 




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