Prof. Jane P. Chang

	RESEARCH INTERESTS
	Atomic Layer Deposition	Plasma Assisted Etching

	Atomic layer deposition (ALD) uses self-limiting reaction sequences to deposit atomic layer controlled metal oxide thin films for gate dielectric application where the quality and properties of the dielectric materials are the most critical.	Plasma etching is the enabling technology that patterns thin film materials into specific structures for microelectronics application. High fidelity pattern transfer relies on a delicate balance between the ion- and radical- enhanced reactions.

	Plasma Enhanced ALD	First Principle Calculations

	Plasma enhanced atomic layer deposition achieves thin film deposition at room temperature, as the radicals generated by the plasma activate the surface reactions. In-situ plasma diagnostics are essential in quantifying the gas phase reactions.	Chemical coordination at dielectric/semiconductor interfaces dominates the device performance while first principle simulations using density functional theory allow an accurate determination of the physical and chemical properties of these interfaces.

	Radical Enhanced ALD	Micro Chemical Sensors

	Surface reaction kinetics is systematically studied by using well-defined reactive beams of radicals, ions, and molecules, and the reactions are monitored accurately with quartz crystal microbalance and mass spectrometry.	Chemical analysis are realized with micro-analytical systems that combine a reference cell, a gas chromatography column, a thermal conductivity detector, and a miniature cylindrical ion trap for mass analyzing. (Collaboration with Sandia National Lab).