1. Chang, J. P. and Sawin, H. H., “Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2 and Cl+ beam scattering,” Journal of Vacuum Science and Technology, A 15 (3), 610-615 May/June 1997.

2. Chang, J. P., Arnold, J. C., Zau, G. C. H. , H. Shin, Sawin, H. H. “Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic and molecular chlorine,” Journal of Vacuum Science and Technology, A 15 (4), 1853-1863, July/August 1997.

3. Chang, J. P., Zhang, Z., Xu, H., Sawin, H. H., Butterbaugh, J. W. “Transition metal cleaning using thermal beams,” Journal of Vacuum Science and Technology, A 15 (6), 2959-2967, November/December 1997.

4. Chang, J. P., Mahorowala, A. P., Sawin, H. H. “Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon,” Journal of Vacuum Science and Technology, A 16 (1), 217-224, January/February 1998.

5. Chang, J. P., Opila, R. L., Alers, G. B., Steigerwald, M. L., Lu, H. C., Garfunkel, E., Gustafsson, T. “Interfacial Reaction and Thermal Stability of Ta2O5/TiN for Use in Metal Electrode Capacitors”, Solid State Technology, 42 (2), 43-48, February 1999.

6. Chang, J. P., Steigerwald, M. L., Fleming, R. M., Opila, R. L., Alers, G. B. “Thermal Stability of Tantalum Oxide in Metal-Oxide-Metal Capacitor Structures”, Applied Physics Letters, 74 (24), 3705-3707, June 1999.

7. Chang, J. P., Krautter, H. W., Opila, R. L., Zhu, W., Pai, C. S. “Integration of Fluorinated Amorphous Carbon as Low-Dielectric Constant Insulator: Effects of Heating and Deposition of Tantalum Nitride”, Journal of Vacuum Science and Technology, A 17 (5), 2969-2974, September/October 1999.

8. Lu, H. C., Yasuda, N., Garfunkel, E., Gustafsson, T., Chang, J. P., Opila R. L., Alers G. “Structural Properties of Thin Films of High Dielectric Constant Materials on Silicon”, Microelectronic Engineering, 48, 287-290, September 1999.

9. J. P. Chang, M. L. Green, V. M. Donnelly, J. Sapjeta, R. L. Opila, H. C. Lu, T. Gustafsson, and E. Garfunkel, “Profiling Nitrogen in Ultrathin Silicon Oxynitrides with Angle-resolved X-ray Photoelectron Spectroscopy”, Journal of Applied Physics, 87 (9), 4449-4455 (2000).

10. K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, and R. L. Opila, “Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon”, Journal of Applied Physics, 87 (3), 1322-1330 (2000).

11. Chang, J. P. and Sawin, H. H. “Molecular beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine,” Journal of Vacuum Science and Technology, B 19 (4), 1319-1327 (2001).

12. Chang, J. P. and Lin, Y., “Highly Conformal ZrO2 Deposition for Dynamic Random Access Memory Application”, Journal of Applied Physics, 90 (6), 2964-2969 (2001).

13. Chang, J. P., and Sawin, H. H. “Notch Formation by Stress Enhanced Spontaneous Etching of Polysilicon”, Journal of Vacuum Science and Technology, B 19(5), 1870-1873 (2001).

14. Chang, J. P., Y. Lin, and K. Chu, “Rapid Thermal Chemical Vapor Deposition of Zirconium Oxide for MOSFET Application”, Journal of Vacuum Science and Technology, B 19(5), 1782-1787 (2001).

15. Chang, J. P., Lin, Y-S., Berger, S., Kepten, A., Bloom, R., and Levy, S., “Ultra-thin Zirconium Oxide Films as Alternative Gate Dielectrics”, Journal of Vacuum Science and Technology, B 19(6), 2137-2143, (2001).

16. Chang, J. P. and Lin, Y-S., “Dielectric Property and Conduction Mechanism of Ultrathin Zirconium Oxide Films”, Applied Physics Letters, 79 (22), 3666-3668 (2001).

17. Chang, J. P., and Lin, Y., “Thermal Stability of Stacked High-k Dielectrics on Silicon”, Applied Physics Letters, 79 (23), 3824-3826, (2001).

18. Cho, B.- O., Lao, S. and Chang, J. P., “Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide ”, Journal of Vacuum Science and Technology, A 19 (6), 2751-2761 (2001).

19. Chu, K. Chang, J. P. Chang, Steigerwald, M. L., Fleming, R. M., Opila, R. L., Lang, D. V., Van Dover, R. B., and Jones, C. D. W., “Material and Electrical Characterization of Carbon-Doped Ta2O5 Films for Embedded DRAM Applications”, Journal of Applied Physics, 91 (1), 308-316 (2002).

20. Chang, J. P., “Tailoring the material and electronic properties of ultra-thin ZrO2 films for microelectronics application,” Journal of the Chinese Institute of Chemical Engineers (Festschrift issue in honor of Dr. Norman Li) 33 (1), 95-102 (2002).

21. Chang, J. P.,“A Hands-on Laboratory in the Fundamentals of Semiconductor Manufacturing-- The Capstone Course of A New Undergraduate Option ”, Chemical Engineering Education, 36 (1), 14-19 (2002).

22. Cho, B.- O., Wang, J.-J., Sha, L. and Chang, J. P., “Tuning the Electrical Properties of Zirconium Oxide Thin Films”, Applied Physics Letters, 80 (6), 1052-1054 (2002).

23. Chang, J. P., “A New Undergraduate Semiconductor Manufacturing Option in Chemical Engineering Curriculum”, International Journal of Engineering Education, 18 (3), 369-378, (2002).

24. Sha, L., Cho, B. O. and Chang, J. P., “Ion-enhanced chemical etching of ZrO2 in a chlorine discharge,” Journal of Vacuum Science and Technology, A 20 (5), 1525-1531 (2002).

25. Lin, Y-S., Puthenkovilakam, R., and Chang, J. P., “Dielectric property and thermal stability of HfO2 on silicon”, Applied Physics Letters, 81(11), 2041-2043 (2002).

26. Cho, B.- O., Wang, J. J., and Chang, J. P., “Metalorganic precursor decomposition and oxidation mechanisms in plasma enhanced ZrO2 deposition”, Journal of Applied Physics, 92 (8), 4238-4244 (2002).

27. Cho, B.- O., Chang, J. P., Min J.H., Moon S.H., Kim Y.W. and Levin I., “Material characteristics of electrically tunable zirconium oxide thin film”, Journal of Applied Physics, 93 (1), 745-749 (2003).

28. Lin, Y-S., Puthenkovilakam, R., Chang, J. P., Bouldin C., Levin I., Nguyen N.V. Ehrstein J., Sun Y., Pianetta P., Concard T., Vandervorst W., Venturo V. and Selbrede S., “Interfacial properties of ZrO2 on silicon”, Journal of Applied Physics, 93 (10), 5945-5951 (2003).

29. Cho, B.- O., Lao, S. and Chang, J. P., “The Origin and Effect of Impurity Incorporation in Plasma Enhanced ZrO2 Deposition”, Journal of Applied Physics, 93 (11), 9345-9351 (2003). 

30 . Sha, L. and Chang, J. P., “Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasma”, Journal of Vacuum Science and Technology A, 21(6) Nov/Dec 2003.

31 . Sha, L. and Chang, J. P., “Plasma Etching of High Dielectric Constant Materials on Silicon in Halogen Chemistries”, Journal of Vacuum Science and Technology A. 22 (1), Jan/Feb 2004.

32 . Sha, L., Puthenkovilakam R., Lin Y. and Chang, J. P., “Ion-enhanced chemical etching of HfO2 for integration in MOSFETs”, Journal of Vacuum Science and Technology B 21 (6), Nov/Dec 2003.

33 . Puthenkovilakam, R., and Chang, J. P., "Valence band structure and band alignment at the ZrO2/Si interface", Applied Physics Letters, 84 (8), 1353-1355 (2004).

34 . Puthenkovilakam, R., Carter, E. A., and Chang, J. P., "First-priciples exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces", Physical Review B, 69 (11), 155329 (2004).

35 . Ni, Dong, Y. Lou, P.D. Christofides, L. Sha, S. Lao, J.P. Chang, "Real-Time Carbon Content Control for PECVD ZrO2 Thin Film Growth", IEEE Trans. Semiconduct. Manufact., 17 (2), 221 (2004).

36 . Chang, J. P. and Sha, L., “Plasma-surface interactions in patterning high-k dielectric materials”, Semiconductor FabTech 22, 75-80 (2004). (Invited)

37 . Puthenkovilakam, R., and Chang, J. P., "An accurate determination of barrier heights at the HfO2/Si interfaces", Journal of Applied Physics 95 (5), 2701-2707 (2004).

38 . T. J. Huang, H.-R. Tseng, L. Sha, W. Lu, B. Brough, A.H. Flood, B.-D. Yu, P. C. Celestre, J. P. Chang, J. F. Stoddart, and C.-M. Ho, “Mechanical Shuttling of Linear Motor-Molecules in Condensed Phases on Solid Substrates", Nano Letters, 4 (11), 2065-2071 (2004).

39 . M. Moravej, X. Yang, G. R. Nowling, J. P. Chang, R. F. Hicks, and S. E. Babayan, "Physics of high-pressure helium and argon radio-frequency plasmas", Journal of Applied Sciences, 96 (12), 7011-7017 (2004).

40 . T. T. Van and J. P. Chang, "Surface reaction kinetics of metal beta-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides", Applied Surface Science, 246, 250-261 (2005).

41 . R. Puthenkovilakam, Y.-S. Lin, J. Choi, J. Lu, H.-O. Blom, P. Pianetta, D. Devine, M. Sendler, and J. P. Chang, "Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon", Journal of Applied Physics, 97 (2005).

42 . X. Yang, M. Moravej, G. R. Nowling, S. E. Babayan, J. Panelon, J. P. Chang, and R. F. Hicks, "Comparison of an atmospheric pressure, radio-frequency discharge operating in the alpha and gamma modes", Plasma Sources Sci. Technol., 14, 314-320 (2005).

43 . X. Yang, M. Moravej, G. R. Nowling, J. P. Chang, and R. F. Hicks, "Operating Modes of an Atmospheric Pressure Radio Frequency Plasma", IEEE Transactions on Plasma Science, 33 (2), 294-295 (2005).

44 . S. X. Lao, R. M. Martin, and J. P. Chang, "Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k films", J. Vac. Sci. Technol. A, 23 (3), 488-496 (2005).

45 . D. Cruz, J. P. Chang, and M. G. Blain, "Field emission characteristics of a tungsten microelectromechanical system device", Applied Physics Letters, 86, 153502 (2005).

46 . J. Choi, R. Puthenkovilakam, and J. P. Chang, "Band structure and alignment of the AlN/SiC heterostructure", Applied Physics Letters, 86, 192101(2005).

47 . R. Puthenkovilakam, M. Sawkar, J.P. Chang, "Electrical characteristics of postdeposition annealed HfO2 on silicon", Applied Physics Letters, 86, 202902 (2005).

48 . T.T. Van and J.P. Chang, "Controlled erbium incorporation and photoluminescence of Er-doped Y2O3", Applied Physics Letters, 87, 011907 (2005).

49 . T.T. Van and J.P. Chang, "Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals", Surface Science, 596, 1-11 (2005).

50 . J.W. Choi and J.P. Chang, "Photoconductivity of AlN films on SiC", Journal of Applied Physics, 98, 093513 (2005).

51 . J. Choi, R. Puthenkovilikam, and J.P. Chang, "Effect of nitrogen on the electronic properties of hafnium oxynitrides", Journal of Applied Physics, 99, 053705 (2006).

52. T.T. Van, J.R. Bargar, and J.P. Chang, "Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure", Journal of Applied Physics, 100, 023115 (2006).

53. T.T. Van, J.Hoang, R. Ostroumov, K.L. Wang, J.R. Bargar, J. Lu H.-O. Blom and J.P. Chang, "Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits", Journal of Applied Physics, 100, 073512 (2006).

54. H.T. Johnson-Steigelman, A.V. Brinck, J.P. Chang and P.F. Lyman, "Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction", Journal of Vacuum Science &Technology A, 24, 1218-1222 (2006)

55. D. Cruz, J.P. Chang, S.K. Showalter, F. Gelbard, R.P. Manginell, and M.G. Blain, "Microfabricated thermal conductivity detector for the micro-ChemLab (TM)", Sensors and Actuators B (2006).

56. C.Cruz, J.P.Chang, M. Fico, A.J. Guymon, D.E. Austin and M.G. Blain, "Design, Microfabrication, and analysis of micrometer-sized cylindrical ion trap arrays", Review of Scientific Instruments, 78, 015107 (2007)

57. C.M. Tanner, J. Choi, and J.P. Chang, "Electronic structure and band alignment at the HfO2/4H-SiC interface", Journal of Applied Physics, 101, 034108 (2007).

58. C.M. Tanner, M. Sawkar-Mathur, J. Lu, H.-O. Blom, M. Toney, and J.P. Chang, "Structural properties of epitaxial gamma-Al2O3 (111) thin filims on 4H-SiC (0001)", Applied Physics Letters, 90, 061916 (2007).

59. J. Hoang, T.T. Van, M. Sawkar-Mathur, B. Hoex, M. Van de Sanden, W.M.M Kessels, R. Ostroumov, K.L. Wang, J.R. Bargar and J.P. Chang, "Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition", Journal of Applied Physics, 101, 123116 (2007)

60. K-C Lu, W-W Wu, H-W- Wu, C.M. Tanner, J.P. Chang, L.J. Chen, and K.N. Tu, "In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction", Nano Letters, Vol. 7 No. 8, 2389-2394 (2007)

61. C.M. Tanner, Y-C Perng, C. Ferwin, S.E. Saddow and J.P. Chang, "Electrical performance of Al2O3 gate dielectric thin films deposited by atomic layer deposition on 4H-SiC", Applied Physics Letters, 91, 203510 (2007)

62. C.M. Tanner, M.F. Toney, J. Lu, H.-O. Blom, M. Sawkar-Mathur, M.A. Tafesse and J.P. Chang, "Engineering epitaxial gamma-Al2O3 gate dielectric films on 4H-SiC", Journal of Applied Physics, 102, 104112 (2007)

63. Y.B. Mao, J.Y. Huang, R. Ostroumov, K.L. Wang and J.P. Chang, "Synthesis and Luminescence Properties of Erbium-Doped Y2O3 Nanoparticles", Journal of Physical Chemistry C, 112, 2278-2285 (2008)

64. Y.B. Mao, J. Bargar, M. Toney and J.P. Chang, "Correlation between luminescent properties and local coordination environment for erbium doped yttrium oxide nanotubes", Journal of Applied Physics, 103, 094316 (2008)

1. Chang, J. P., Zhang, Z., Xu, H., Sawin H. H., Butterbaugh, J. W. “Dry cleaning of Cu, Ni and Fe from silicon and oxide surfaces at room temperature,” Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces, p. 87-90, Antwerp, Belgium 1996.

2. Chang, J. P., Zhang, Z., Xu, H., Sawin H. H., Butterbaugh, J. W. “Metal removal with a ClF3 beam at room temperature,” Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, Vol. 95-20, p. 158-165, The Electrochemical Society, Pennington, NJ. 1996.

3. Chang J. P., Sawin, H. H. "Plasma-surface kinetics and feature profile evolution in chlorine polysilicon etching," Proceedings of the International workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfaces, p. 3-4, Shirahama, Japan 1997.

4. Mahorowala. A. P., Chang, J. P., Sawin, H. H. “Profile evolution simulation of high density plasma etching of patterned polysilicon”, Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications: Thin Film Processes, Electrochem. Soc, 97-30, p.24-34. ix+370, 1998.

5. Opila, R. L., Chang, J. P., Du, M., Bevk, J., Ma Y., “X-ray photoelectron study of gate oxides and nitrides,” Solid State Phenomena Vol., 65-66, p.257-260, Ostend, Belgium 1998.

6. Chang, J. P., Green, M. L., Opila, R. L.,Eng, J. “X-ray photoelectron studies of Oxinitrides for Gate Applications,” Silicon Nitride and Silicon Dioxide Thin Insulating Films. Proceedings of the Fifth International Symposium, Electrochemical Society Proceedings, 99-6, 193-206. xi+284 (1999).

7. J. P. Chang, C. B. Case, H. W. Krautter, J. Sapjeta, R. L. Opila, and M. A. Decker, “Study of Metal/Barrier/low-k interfaces for Interlayer Dielectric Applications”, Interconnect and Contact Metallization for ULSI. Proceedings of the 1999 International Meeting, The Electrochemical Society, 99-31 261-269. ix+340 (1999).

8. Sapjeta, J.; Green, M.L.; Chang, J.P.; Silverman, P.J.; Sorsch, T.W.; Weir, B.E.; Gladden, W.; Ma, Y.; Sung, C.Y.; Lennard, W.N. “Relationship between interfacial roughness and dielectric reliability for silicon oxynitride gate dielectrics processed with nitric oxide”, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics. Symposium, Materials Research Society, 567, p.289-94. xvii+615 (1999).

9. Alers, G.B.; Stirling, L.A.; Vandover, R.B.; Chang, J.P.; Werder, D.J.; Urdahl, R.; Rajopalan, R. (Edited by: Huff, H.R.; Richter, C.A.; Green, M.L.; Lucovsky, G.; Hattori, T.) “Effect of thermal stability and roughness on electrical properties of tantalum oxide gates”. Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics. Symposium, Materials Research Society, 567, 391-395. xvii+615 (1999).

10. Alers, G.B.; van Dover, R.B.; Schneemeyer, L.F.; Stirling, L.; Sung, C.Y.; Diodato, P.W.; Liu, R.; Wong, Y.H.; Fleming, R.M.; Lang, D.V.; Chang, J.P. “Advanced amorphous dielectrics for embedded capacitors”. International Electron Devices Meeting 1999. (Cat. No.99CH36318), Technical Digest, p.797-800 (1999).

11. J. P. Chang, M. L. Steigerwald, R. M. Fleming, R. L. Opila, and G. B. Alers, “Oxygen diffusion in Tantalum Oxide Metal-Oxide-Metal Capacitor Structures”, Multicomponent Oxide Films for Electronics. Symposium, Mater. Res. Soc, 574, 329-34. xiii+382 (1999).

12. J. P. Chang, H. W. Krautter, R. L. Opila, W. Zhu and C. S. Pai, “Chemical and Thermal Stability of Fluorinated Amorphous Carbon Films for Interlayer Dielectric Applications”, Low-Dielectric Constant Materials V. Proceedings, Materials Research Society Symposium Proceedings, 565, 117-122. xi+306 (1999).

13. J. P. Chang, J. Eng., Jr., J. Sapjeta, R. L. Opila, P. Cox, and P. Pianetta , “Ultraviolet Light Stimulated Halogen Chemistry on Cleaning Silicon Surfaces”, Cleaning Technology in Semiconductor Device Manufacturing. Proceedings of the Sixth International Symposium, Electrochemical Society Proceedings, 99-36, 129-136. xiii+614 (2000).

14. J. P. Chang, J. Sapjeta, J. M. Rosamilia, T. Boone, J. Eng, Jr., and R. L. Opila, S. Brennan, C. Wiemer, and P. Pianetta “The effect of dilute cleaning and rinsing chemistries on transition metal removal and Si surface microroughness,” Cleaning Technology in Semiconductor Device Manufacturing. Proceedings of the Sixth International Symposium, Electrochemical Society Proceedings, 99-36, 17-24. xiii+614 (2000).

15. Jane P. Chang, “Curriculum Innovation and Integration in Electronic Materials Processing and Engineering,” Proceeding of the 2000 International Conference on Engineering Education, Taipei, Taiwan (2000).

16. Jane P. Chang, “Emerging New Chemical Engineering Curriculum on Semiconductor Manufacturing”, Proceeding of the Innovation in Materials Engineering Symposium, AIChE 2000 annual meeting (2000).

17. J. P. Chang, “Practicing Engineering Principles at Micro to Nano Scales through Hands-On Laboratory Training”, Proceeding of the 2001 International Conference on Engineering Education,6B2-17-18, Oslo, Norway (2001).

18. J. P. Chang, “Redesigning the Chemical Engineering Curriculum for Challenges in the 21st Century”, Proceeding of the 2001 International Conference on Engineering Education, 6D7-21, Oslo, Norway (2001).

19. J. P. Chang, “Innovative Curriculum on Electronic Materials Processing and Engineering”, Proceeding of the Impacting Society through Materials Science and Engineering Education Symposium, 684E, GG 5.2, Materials Research Society (2001).

20. J. P. Chang and Y. S. Lin, “Ultra-Thin Zirconium Oxide Films Deposited by Rapid Thermal Chemical Vapor
Deposition (RT-CVD) as Alternative Gate Dielectric”, Proceeding of the Gate Stack and Silicide Issues in Si Processing II Symposium, 670, K1.4, Materials Research Society (2001).

21. K. Chu, B.-O. Cho, J. P. Chang, M. L. Steigerwald, R. M. Fleming, R. L. Opila, D. V. Lang, R. B. Van Dover, and C. D.W. Jones, “Material and Electrical Characterization of Carbon-Doped Ta2O5 Films for Embedded DRAM Applications,” Proceeding of the Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures Symposium, 672, O8.39, Materials Research Society (2001).

22. J. P. Chang and Y. S. Lin, “Integrate Alternative Gate Dielectrics with Tailored Material and Electronic Properties”, Proceeding of the 2002 AVS 3rd International Conference on Microelectronics and Interfaces, 30-33, American Vacuum Society (2002).

23. B. O. Cho, J. J. Wang, L. Sha, and J. P. Chang, “Tuning the Materials and Electrical Characteristics of ZrO2 Films by Plasma Enhanced Chemical Vapor Deposition”, Proceeding of the 2002 AVS 3rd International Conference on Microelectronics and Interfaces, 130-132, American Vacuum Society (2002).

24. L. Sha and J. P. Chang, “Patterning High Dielectric Constant Materials for Microelectronics Application”, Proceeding of the 2002 AVS 3rd International Conference on Microelectronics and Interfaces, 195-197, American Vacuum Society (2002). 

25. Y. S. Lin, R. Puthenkovilakam, and J. P. Chang, “Atomic Layer Deposition of High-k Dielectrics for Metal-oxide-semiconductor devices”, Science and Technology of Dielectrics in Emerging Fields Symposium, the 203rd Meeting of The Electrochemical Society in Paris, France, April 27-May 2, 2003.

26. L. Sha and J. P. Chang, “"Gas-Phase and Surface Reactions in Plasma Enhanced Chemical Etching of High-K Dielectrics”, Thin Film Materials, Processes, and Reliability: Plasma Processing for the 100 nm Node and Copper Interconnects with Low-k Inter Level Dielectric Films Symposium, the 203rd Meeting of The Electrochemical Society in Paris, France, April 27-May 2, 2003.

27. Chang, J. P., “Plasma Enhanced Deposition and Etching of High Dielectric Constant Materials on Silicon”, the 4th International Symposium on Applied Plasma Science, Kyoto, Japan, Advances in Applied Plasma Science, 4, 271 (2003).

28. R. Puthenkovilakam, Y.-S. Lin, and J. P. Chang, “Atomic and Electronic Structures of ZrO2/Si and ZrSixOy interfaces” 4th AVS International Conference on Microelectronics and Interfaces, 39-41, American Vacuum Society (2003).

29. Y.-S. Lin, R. Puthenkovilakam, and J. P. Chang “Hafnium Oxide Thin Film as an Alternative Gate Dielectric Material” 4th AVS International Conference on Microelectronics and Interfaces, 25-27, American Vacuum Society (2003).

30. Chang, J. P., “Plasma Enhanced Deposition and Etching of High Dielectric Constant Materials on Silicon”, the 4th International Symposium on Applied Plasma Science, Kyoto, Japan, Advances in Applied Plasma Science, 4, 271 (2003).

31. R. Puthenkovilakam and J. P. Chang, “Tailoring high-k/silicon interface for nanoelectronics applications”, the 2nd International Symposium on High-K Materials, the 204th Electrochemical Society Meeting, Orlando, Florida, October 2003.

32. Ni, Dong, Y. Lou, P.D. Christofides, L. Sha, , S. Lao and J.P. Chang, “A Method for Real-Time Control of Thin Film Composition Using OES and XPS”, Proceedings of American Control Conference, Denver, Colorado, November 2003.

33. S. X. Lao and J. P. Chang, “Plasma enhanced atomic layer deposition for compositionally controlled metal oxide thin films” 5th AVS International Conference on Microelectronics and Interfaces, 89, American Vacuum Society (2004).

34. D. L. Ramirez and J. P. Chang “Ion-enhanced chemical etching of metal oxides in Cl2 and BCl3 plasmas” 5th AVS International Conference on Microelectronics and Interfaces, 179, American Vacuum Society (2004).

35. Ni, Dong, Y. Lou, P.D. Christofides, S. Lao and J.P. Chang, “Real-Time Feedback Control of Carbon Content of Zirconium Dioxide Thin Films Using Optical Emission Spectroscopy”, Proceedings of 5th International Symposium on Advanced Control of Chemical Processes, 615-620, Hong Kong, China, 2004.

36. J. P. Chang, “A Plasma Etching Perspective of Patterning Novel Materials and Small Structures”, Proceeding of SPIE-The International Society for Optical Engineering, 5592, 38-43 (2005).

37. J. P. Chang, “SBIR Opportunities for University Research and Development”, Proceeding to the 2004 AIChE Annual Meeting, Austin, 147-d-1-8, TX (2004).

38. J. P. Chang, “Plasma Enhanced Deposition of High Dielectric Constant Materials on Silicon”, Proceeding of International Symposium on Dry Processes, 317-324, Tokyo, Japan (2004).

39. J. Choi, R. Puthenkovilakam, C. M. Tanner and J. P. Chang, “Determination of band offsets at the AlN/SiC interface”, Proceeding of the 208th ECS Meeting, Los Angeles, CA, October, 2005.

40. C. M. Tanner, J. Choi, and J. P. Chang, “Material and electronic properties of ultra thin HfO2 films on 4H-SiC (0001)”, Proceeding of the 208th ECS Meeting, Los Angeles, CA, October, 2005.

41. T. T. Van, J. Bargar, R. Ostroumov, K. L. Wang, and J. P. Chang, “Photoluminescence properties of Er-doped Y2O3 thin films by radical enhanced atomic layer deposition,” SPIE Optics East Conference, Boston, October, 2005. 

42. C. M. Tanner, J. Lu, H.-O. Blom, and J. P. Chang, “Growth of Epitaxial g-Al2O3 Dielectrics on 4H-SiC,” Proceeding of the Silicon Carbide – Materials , Processing, and Devices Symposium, Materials Research Society (2006).